3SK186

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS Min 12 ±10 ±10 — — +0.5 +0.5 0 15 — — — 16 — Typ — — — — — — — — — 1.7 1.0 0.017 19 3.0 Max — — — ±100 ±100 –0.8 –0.8 4 — 2.2 1.4 0.03 — 4.5 Unit V V V nA nA V V mA mS pF pF pF dB dB VDS = 4 V, VG2S = 3V, I D = 10 mA, f = 900 MHz Test conditions VG1S = VG2S = –5 V, I D = 200 µA I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, VG2S = VDS = 0 VG2S = ±8 V, VG1S = VDS = 0 VDS = 6 V, VG2S = 3V, I D = 100 µA VDS = 6 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, VG1S = 0 VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “FI–”. I DSS |yfs| Ciss Coss Crss PG NF 2 3SK186 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Typical Output Characteristics 20 1.6 1.4 1.2 =1 P ch 50 mW Drain Current ID (mA) 16 1.0 200 12 VG2S = 3 V 0.8 0.6 8 100 4 0.4 0.2 VG1S = 0 V 0 50 100 150 Ambient Temperature Ta (°C) 0 2 6 10 4 8 Drain to Source Voltage VDS (V) Drain Current vs. Gate 1 to Source Voltage 20 VDS = 4 V 3 2 2.5 1.5 Drain Current ID (mA) 20 Drain Current vs. Gate 2 to Source Voltage 1.75 VDS = 4 V 1.0 12 0.75 8 0.5 4 0.25 VG1S = 0 1.5 1.25 Drain Current ID (mA) 16 16 12 1.0 8 VG2S = 0.5 V 4 0 –0.8 0 0.8 1.6 2.4 3.2 Gate 1 to Source Voltage VG1S (V) 0 0.8 1.6 2.4 3.2 4.0 Gate 2 to Source Voltage VG2S (V) 3 3SK186 Forward Transfer Admittance vs. Gate 1 to Source Voltage Forward Transfer Admittance yfs (mS) 20 VDS = 6 V 3 2.5 2.0 Power Gain PG (dB) 20 Power Gain vs. Drain Current 16 16 12 1.5 8 1.0 4 VG2S = 0.5 V 12 8 VDS = 4 V VG2S = 3 V f = 900 MHz 4 0 –0.4 0 0.4 0.8 1.2 1.6 Gate 1 to Source Voltage VG1S (V) 0 2 4 6 8 Drain Current ID (mA) 10 Noise Figure vs. Drain Current 10 VDS = 4 V VG2S = 3 V f = 900 MHz Noise Figure NF (dB) 8 6 4 2 0 2 4 6 8 Drain Current ID (mA) 10 4 Unit: mm 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.4 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.65 0.16 – 0.06 + 0.1 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.85 1.8 ± 0.2 0.3 1.1 – 0.1 + 0.2 0.65 0.4 – 0.05 + 0.1 0.1 0.6 + 0.05 – 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-4 — Conforms 0.013 g Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.