4AJ11

4AJ11 Silicon P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S3 S6 S7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings –60 ±20 –8 –32 –8 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AJ11 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –60 ±20 — — –1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 5.5 — — — — — — — — — Typ — — — — — 0.09 0.12 7.7 1400 720 220 15 120 220 160 –1.05 190 Max — — ±10 –250 –2.0 0.13 0.17 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V µs I F = –8 A, VGS = 0 I F = –8 A, VGS = 0, dIF/dt = 50 A/µs Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –4 A VGS = –10 V*1 I D = –4 A VGS = –4 V*1 I D = –4 A VDS = –10 V*1 VDS = –10 V VGS = 0 f = 1 MHz I D = –8 A VGS = –10 V RL = 3.75 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 4AJ11 Maximum Channel Dissipation Curve Pch (W) Pch (W) 6 Condition : Channel dissipation of each die is is idetical 4 Device Operation 4 3 Device Operation 2 Device Operation 1 Device Operation 2 30 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation Collector Power Dissipation Collector Power Dissipation 20 10 0 50 100 150 Ambient Temperature Ta (°C) 0 50 100 Case Temperature Tc (°C) 150 4 Unit: mm 31.0 ± 0.3 4.0 ± 0.2 2.7 10.0 ± 0.3 10.5 ± 0.5 1.5 ± 0.2 0.85 ± 0.1 1.4 2.54 0.55 –0.06 +0.1 1 2 3 4 5 6 7 8 9 10 11 12 Hitachi Code JEDEC EIAJ Weight (reference value) SP-12 — — 3.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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