4AK15

4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver 4AK15 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Rating ±60 ±20 8 32 8 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK15 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7 — — — — — — — — — Typ — — — — — 0.055 0.075 12 860 450 140 10 70 180 120 1.05 110 Max — — ±10 250 2.0 0.07 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0 dIF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 8 A VGS = 10 V*1 ID = 8 A VGS = 4 V*1 ID = 8 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 8 A VGS = 10 V RL = 3.75 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 4AK15 Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 5 3 Device Operation 4 2 Device Operation 1 Device Operation 3 2 1 30 Channel Dissipation Pch (W) Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 20 2 Device Operation 1 Device Operation 10 0 25 50 75 100 125 Ambient Temperature Ta (°C) 150 0 25 50 75 100 125 Case Temperature TC (°C) 150 Typical Output Characteristics Maximum Safe Operation Area 50 ea O is pe lim rat ite ion d in by t R his n) 20 16 Drain Current ID (A) 10 µs PW DS (o 10 V 4V 5V Pulse Test 3.5 V 20 Drain Current ID (A) 10 5 2 1.0 0.5 0.2 0.1 10 = 10 ar 0 1 m s m µs s ot D 12 3.0 V C O (1 pe ra Sh tio ) n 8 VGS = 2.5 V (T C = 25 °C 4 ) Ta = 25°C 0.05 0.1 0 0.3 3 30 1.0 10 100 Drain to Source Voltage VDS (V) 6 2 4 8 10 Drain to Source Voltage VDS (V) 4 4AK15 Typical Transfer Characteristics 20 16 Drain Current ID (A) VDS = 10 V Pulse Test Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 20 A Pulse Test 12 1.2 8 0.8 10 A 4 75°C –25°C TC= 25°C 0.4 ID = 5 A 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.5 0.2 0.1 10 V Pulse Test VGS = 4 V 0.16 ID = 10 A 5A VGS = 4 V 5A 10 A 20 A 0.12 0.05 0.08 0.04 0.02 0.01 0.005 1 2 10 5 20 50 Drain Current ID (A) 100 VGS = 10 V 0 –40 80 0 40 120 Case Temperature TC (°C) 160 5 4AK15 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 Reverse Recovery Time trr (ns) 20 10 5 75°C VDS = 10 V Pulse Test –25°C TC = 25°C 1000 500 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 200 100 50 2 1.0 0.5 0.2 20 10 0.5 0.5 1.0 10 5 2 Drain Current ID (A) 20 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 Typical Capacitance vs. Drain to Source Voltage 10000 Drain to Source Voltage VDS (V) 3000 Capacitance C (pF) 1000 300 100 30 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 0 Ciss Coss Crss VGS = 0 f = 1MHz 100 80 Dynamic Input Characteristics 20 16 Gate to Source Voltage VGS (V) VDD = 50 V 25 V 10 V 60 VDS 12 40 20 VGS VDD = 50 V ID = 15 A 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 8 4 0 40 6 4AK15 Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 500 Reverse Drain Current IDR (A) td (off) tf 16 Pulse Test 20 Switching Time t (ns) 200 100 50 12 10 V 15 V 5V VGS = 0, – 5 V tr 20 10 5 0.2 VGS = 10 V VDD = 30 V PW = 2µs, duty < 1 % • • 8 4 td (on) 0 0.5 10 1.0 5 2 Drain Current ID (A) 20 0.4 0.8 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 7 Unit: mm 26.5 ± 0.3 4.0 ± 0.2 10.0 ± 0.3 2.5 1.82 2.54 1.4 0.55 ± 0.1 10.5 ± 0.5 1.5 ± 0.2 0.55 –0.06 +0.1 1 2 3 4 5 6 7 8 9 10 Hitachi Code JEDEC EIAJ Weight (reference value) SP-10 — — 2.9 g Cautions 1. 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