4AM13

4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM13 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID ID(pulse)*1 IDR Nch 60 ±20 3 12 3 Pch –60 ±20 –3 –12 –3 Unit V V A A A W W °C °C Pch (Tc = 25°C)*2 28 Pch*2 Tch Tstg 4 150 –55 to +150 2 4AM13 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol Min Typ — — — — — 0.25 Max — — ±10 250 2.0 0.35 P channel Min –60 ±20 — — –1.0 — Typ — — — — — 0.28 Max — — ±10 Unit V V µA Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1.5 A, VGS = 10 V*1 0.35 0.5 — 0.4 0.55 Ω ID = 1.5 A, VGS = 4 V*1 ID = 1.5 A, VDS = 10 V*1 Ciss Coss Crss td(on) tr td(off) tf VDF trr — — — — — — — — — 240 115 35 4 20 80 40 1.2 75 — — — — — — — — — — — — — — — — — — 400 240 70 5 25 180 80 –1.1 140 — — — — — — — — — pF pF pF ns ns ns ns V ns IF = 3 A, VGS = 0 IF = 3 A, VGS = 0, dIF/dt = 50 A/µs ID = 1.5 A, VGS = 10 V, RL = 20 Ω VDS = 10 V, VGS = 0, f = 1 MHz V(BR)DS 60 S V(BR)GS ±20 S IGSS IDSS — — –250 µA –2.0 0.4 V Ω VGS(off) 1.0 Static drain to source on RDS(on) — state resistance — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| 1.5 2.5 — 1.5 2.5 — S Polarity of test conditions for P channel device is reversed. 3 4AM13 4 4AM13 5 4AM13 6 4AM13 7 4AM13 8 4AM13 9 4AM13 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10