BB302C

BB302C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-573 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302C is individual type number of HITACHI BBFET. BB302C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature ±10 25 100 150 –55 to +150 V mA mW °C °C Unit V V Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current I D(op) — — +100 ±100 1.0 nA V(BR)G2SS ±10 — — V V(BR)G1SS +10 — — V Symbol V(BR)DSS Min 12 Typ — Max — Unit V Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = ±10µA VG1S = VDS = 0 VG1S = +9V VG2S = VDS = 0 — — nA VG2S = ±9V VG1S = VDS = 0 0.4 — V VDS = 9V, VG2S = 6V I D = 100µA 0.4 — 1.0 V VDS = 9V, VG1S = 9V I D = 100µA 9 13 18 mA VDS = 9V, VG1 = 9V VG2S = 6V RG = 120kΩ Forward transfer admittance |yfs| 15 20 — mS VDS = 9V, VG1 = 9V VG2S =6V RG = 120kΩ, f = 1kHz Input capacitance Output capacitance c iss c oss 2.2 0.8 — 22 3.0 1.1 0.017 26 4.0 1.5 0.04 — pF pF pF dB VDS = 9V, VG1 = 9V VG2S =6V, RG = 120kΩ f = 1MHz VDS = 9V, VG1 = 9V VG2S =6V Noise figure NF — 1.7 2.2 dB RG = 120kΩ f = 200MHz Reverse transfer capacitance c rss Power gain PG BB302C Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 Drain A ID Source Application Circuit VAGC = 6 to 0.3 V BBFET V DS = 9 V RFC Output Input RG V GG = 9 V BB302C Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 25 Typical Output Characteristics V G2S = 6 V V G1 = VDS 150 20 Channel Power Dissipation 15 100 Drain Current 10 50 5 R 0 50 100 150 Ta (°C) 200 0 Ambient Temperature 2 4 6 Drain to Source Voltage Drain Current vs. Gate2 to Source Voltage 25 kΩ 68 k Ω Drain Current vs. Gate1 Voltage 20 I D (mA) V DS = 9 V R G = 100 k Ω 16 6V 5V 4V 3V 2V 8 I D (mA) 56 20 82 k Ω 100 k Ω 15 Drain Current 10 150 k Ω 180 k Ω 200 k Ω R G = 220 k Ω 5 Drain Current 120 k Ω 12 4 V DS = V G1 = 9 V 0 1.2 2.4 3.8 Gate2 to Source Voltage 4.8 6.0 VG2S (V) 0 2 4 6 8 V G1 (V) 10 Gate1 Voltage 56 k 68 Ω 82 k Ω k Ω kΩ 00 Ω 1 k 0 12 k Ω 0 15 k Ω 80 Ω 1k 220 0 kΩ = 27 G 8 10 V DS (V) V G2S = 1 V BB302C Drain Current vs. Gate1 Voltege 20 I D (mA) I D (mA) V DS = 9 V R G = 120 k Ω 6V 5V 4V 20 V DS = 9 V R G = 150 k Ω 16 6V 5V 4V 3V 2V V G2S = 1 V Drain Current vs. Gate1 Voltege 16 12 12 Drain Current 8 2V 4 3V Drain Current 8 V G2S = 1 V 4 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 Forward Transfer Admittance |y fs | (mS) 25 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage V DS = 9 V R G = 100 k Ω 20 f = 1 kHz 6V 5V 4V 3V Forward Transfer Admittance vs. Gate1 Voltage 25 V DS = 9 V R G = 120 k Ω 20 f = 1 kHz 15 6V 5V 4V 3V 15 10 2V V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 10 2V 5 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 BB302C Forward Transfer Admittance vs. Gate1 Voltage 25 V DS = 9 V R G = 150 k Ω f = 1 kHz Power Gain vs. Gate Resistance 30 25 Power Gain PG (dB) 20 15 10 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 0 10 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Forward Transfer Admittance |y fs | (mS) 20 6V 5V 4V 3V 15 2V 10 5 Noise Figure vs. Gate Resistance 4 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 30 25 Power Gain PG (dB) 20 15 10 5 0 10 Power Gain vs. Drain Current Noise Figure NF (dB) 3 2 1 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 200 MHz 5 10 15 20 25 30 20 50 100 200 500 1000 0 Gate Resistance R G (k Ω ) Drain Current I D (mA) BB302C Noise Figure vs. Drain Current 4 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 200 MHz 30 25 20 15 10 5 0 10 V DS = 9 V V G1 = 9 V V G2S = 6 V 20 50 100 200 500 1000 Drain Current vs. Gate Resistance 3 2 1 0 5 10 15 20 25 30 Drain Current I D (mA) Noise Figure NF (dB) Drain Current I D (mA) Gate Resistance R G (k Ω ) Gain Reduction vs. Gate2 to Source Voltage 60 Gain Reduction GR (dB) 50 40 30 20 10 Input Capacitance Ciss (pF) V DS = 9 V V G1 = 9 V V G2S = 6 V R G = 120 k Ω f = 200 MHz 6 5 4 3 2 1 0 1 2 3 4 5 6 7 1 Input Capacitance vs. Gate2 to Source Voltage V DS = 9 V V G1 = 9 V R G = 120 k Ω f = 1 MHz 2 3 4 5 6 0 Gate2 to Source Voltage V G2S (V) Gate2 to Source Voltage V G2S (V) BB302C S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –1 –90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 1 / div. 60° –150° –30° –60° Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.01 / div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 to 1000 MHz (50 MHz step) BB302C Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 120kΩ, Zo = 50Ω) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.988 0.986 0.979 0.964 0.948 0.939 0.920 0.904 0.885 0.864 0.848 0.826 0.808 0.789 0.773 0.755 0.735 0.721 0.703 0.677 ANG –5.2 –10.4 –16.0 –21.5 –26.9 –32.0 –37.3 –42.3 –47.1 –51.7 –56.5 –60.9 –65.0 –69.4 –73.7 –77.9 –82.1 –86.3 –90.7 –93.9 S21 MAG 2.13 2.13 2.12 2.08 2.04 2.00 1.95 1.91 1.86 1.81 1.76 1.70 1.66 1.61 1.56 1.51 1.47 1.42 1.39 1.34 ANG 174.1 167.9 161.6 155.2 149.1 143.0 137.3 131.5 125.7 120.1 115.1 110.1 104.7 100.3 95.4 90.5 85.9 81.3 76.9 72.4 S12 MAG 0.00052 0.00087 0.00156 0.00226 0.00254 0.00339 0.00335 0.00338 0.00351 0.00347 0.00355 0.00300 0.00289 0.00246 0.00211 0.00166 0.00165 0.00123 0.00176 0.00204 ANG 90.0 72.5 79.4 78.4 71.0 72.0 59.0 66.3 62.2 56.6 61.5 61.4 51.1 57.6 70.0 77.5 114.5 114.5 145.8 164.0 S22 MAG 0.985 0.993 0.992 0.990 0.987 0.985 0.982 0.978 0.974 0.970 0.966 0.961 0.957 0.952 0.947 0.943 0.937 0.933 0.927 0.923 ANG –1.3 –3.6 –5.5 –7.5 –9.6 –11.4 –13.3 –15.3 –17.1 –18.9 –21.0 –22.7 –24.5 –26.6 –28.3 –30.2 –32.2 –34.1 –35.9 –37.9 BB302C Package Dimensions Unit: mm 2.0 ±0.2 1.3 0.65 0.65 0.3 – 0.05 + 0.1 0.425 0.3 – 0.05 + 0.1 0.16 – 0.06 + 0.1 3 2 2.1 ±0.3 1.25 0 ~ 0.1 4 0.3 – 0.05 0.65 + 0.1 1 0.6 0.425 0.9 ±0.1 0.4 – 0.05 + 0.1 1.25 0.2 Hitahi Code EIAJ JEDEC CMPAK-4 SC-82AB — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.