BB503

BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B(Z) 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “CS–”. BB503M is individual type number of HITACHI BBFET. BB503M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 Gate2 to source voltage +6 –0 Drain current Channel power dissipation Channel temperature Storage temperature 20 150 150 –55 to +150 mA mW °C °C V Unit V V Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.5 0.5 7 19 Typ — — — — — 0.7 0.7 10 24 Max — — — +100 +100 1.0 1.0 13 29 Unit V V V nA nA V V mA mS Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = +10 µA VG1S = VDS = 0 VG1S = +5V VG2S = VDS = 0 VG2S = +5V VG1S = VDS = 0 VDS = 5V, VG2S = 4V I D = 100µA VDS = 5V, VG1S = 5V I D = 100µA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 47kΩ VDS = 5V, VG1 = 5V VG2S =4V RG = 47kΩ, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 47kΩ f = 1MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 47kΩ f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| Input capacitance Output capacitance c iss c oss 1.4 0.7 — 17 — 1.7 1.1 0.025 22 1.8 2.0 1.5 0.05 — 2.4 pF pF pF dB dB Reverse transfer capacitance c rss Power gain Noise figure PG NF 2 BB503M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 Drain A ID Source Application Circuit VAGC = 4 to 0.3 V BBFET V DS = 5 V RFC Output Input RG V GG = 5 V 3 BB503M 900MHz Power Gain, Noise Test Circuit VG1 VG2 C4 C5 VD C6 R1 R2 C3 G2 R3 D L3 RFC Output (50Ω) L4 Input (50Ω) L1 L2 G1 S C1 C2 C1, C2 : C3 : C4 to C6 : R1 : R2 : R3 : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 47 kΩ 47 kΩ 4.7 kΩ L1: 10 10 L2: 26 3 3 (φ1mm Copper wire) Unit: mm 8 21 L4: 29 10 7 7 10 L3: 18 RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm 4 BB503M Maximum Channel Power Dissipation Curve Typical Output Characteristics 20 I D (mA) V G2S = 4 V V G1 = VDS 16 22 kΩ Pch (mW) Channel Power Dissipation 200 150 12 Drain Current 100 RG = 8 50 4 kΩ 47 Ω 68 k kΩ 100 33 kΩ 0 50 100 150 Ta (°C) 200 0 Ambient Temperature 1 2 3 Drain to Source Voltage 4 5 V DS (V) Drain Current vs. Gate1 Voltage 20 I D (mA) V DS = 5 V R G = 33 kΩ 2V Drain Current vs. Gate1 Voltage 20 V DS = 5 V R G = 47 kΩ 16 2V 12 4V 8 3V I D (mA) 16 12 4V 3V Drain Current 8 4 VG2S = 1 V Drain Current 4 VG2S = 1 V 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 0 1 2 3 Gate1 Voltage V G1 4 (V) 5 5 BB503M Drain Current vs. Gate1 Voltage 20 V DS = 5 V R G = 68 kΩ Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 33 kΩ f = 1 kHz 4V 3V I D (mA) 16 Forward Transfer Admittance |y fs | (mS) 24 12 2V 18 2V Drain Current 8 3V VG2S = 1 V 12 4 6 VG2S = 1 V 0 1 2 3 V G1 4 (V) 5 0 Gate1 Voltage 1 2 3 4 Gate1 Voltage V G1 (V) 5 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 47 kΩ f = 1 kHz 4V 3V Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 68 kΩ f = 1 kHz 4V 3V 24 24 2V 18 18 2V 12 12 6 VG2S = 1 V 6 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage V G1 (V) 5 0 1 2 3 4 Gate1 Voltage V G1 (V) 5 6 BB503M Power Gain vs. Gate Resistance 30 25 20 15 10 5 0 10 VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz 4 VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz Noise Figure vs. Gate Resistance Power Gain PG (dB) Noise Figure NF (dB) 100 3 2 1 20 50 Gate Resistance R G (k Ω ) 0 10 20 50 Gate Resistance R G (k Ω ) 100 Power Gain vs. Drain Current 30 25 Power Gain PG (dB) 20 15 10 5 0 0 VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20 4 Noise Figure vs. Drain Current VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz Noise Figure NF (dB) 3 2 1 0 0 5 10 15 20 Drain Current I D (mA) Drain Current I D (mA) 7 BB503M Power Gain vs. Gate2 to Source Voltage 25 Drain Current vs. Gate Resistance 20 Drain Current I D (mA) 15 Power Gain PG (dB) 20 15 10 10 V DS = 5 V R G = 47 kΩ f = 900 MHz 4 5 VDS = VG1 = 5 V VG2S = 4 V 5 0 10 20 50 100 0 1 2 3 Gate Resistance R G (k Ω ) Gate2 to Source Voltage V G2S (V) 5 Noise Figure vs. Gate2 to Source Voltage V DS = 5 V R G = 47 kΩ f = 900 MHz Input Capacitance Ciss (pF) Input Capacitance vs. Gate2 to Source Voltage 4 Noise Figure NF (dB) 4 3 3 2 2 1 V DS = 5 V R G = 47 kΩ f = 1 MHz 0 1 2 3 4 1 1 0 4 2 3 Gate2 to Source Voltage V G2S (V) Gate2 to Source Voltage V G2S (V) 8 BB503M Gain Reduction vs. Gate2 to Source Voltage 0 Gain Reduction GR (dB) 10 20 30 V DS = V G1 = 5 V V G2S = 4 V R G = 47 kΩ 40 50 4 3 2 1 0 Gate2 to Source Voltage V G2S (V) 9 BB503M S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –90° –60° –1 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 1 / div. 60° –150° –30° Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60° 150° 30° .2 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –90° –60° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) 10 BB503M Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 47kΩ, Zo = 50Ω) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.975 0.977 0.975 0.972 0.968 0.963 0.954 0.946 0.937 0.930 0.920 0.914 0.902 0.886 0.879 0.873 0.857 0.845 0.838 0.824 ANG –2.6 –6.5 –9.1 –12.4 –15.6 –18.9 –22.2 –25.3 –28.2 –31.5 –34.7 –37.4 –40.4 –43.5 –46.1 –48.9 –52.0 –54.5 –57.2 –59.6 S21 MAG 2.37 2.37 2.36 2.33 2.32 2.30 2.28 2.25 2.22 2.19 2.16 2.13 2.09 2.07 2.03 1.99 1.96 1.93 1.90 1.86 ANG 176.1 172.1 168.0 163.8 159.9 156.0 151.8 148.2 144.1 140.2 136.3 132.7 129.3 125.4 122.0 118.3 114.9 111.4 108.1 104.9 S12 MAG 0.00097 0.00162 0.00222 0.00282 0.00388 0.00437 0.00518 0.00567 0.00631 0.00637 0.00720 0.00747 0.00738 0.00758 0.00757 0.00729 0.00723 0.00706 0.00659 0.00574 ANG 74.4 89.8 78.2 83.8 81.1 76.0 73.6 75.6 72.5 72.7 70.3 67.0 69.2 68.6 66.0 67.5 68.8 68.3 67.5 71.0 S22 MAG 0.995 0.998 0.997 0.996 0.994 0.993 0.991 0.989 0.986 0.984 0.981 0.978 0.975 0.972 0.968 0.966 0.962 0.959 0.954 0.952 ANG –1.9 –3.9 –5.8 –8.0 –10.0 –11.8 –13.9 –15.8 –17.8 –19.6 –21.6 –23.4 –25.4 –27.3 –29.0 –31.0 –32.9 –34.8 –36.6 –38.5 11 BB503M Package Dimensions Unit: mm 2.95 ±0.2 0.65 — 0.3 + 0.1 1.9 0.95 0.95 0.4 — 0.05 + 0.1 + 0.1 0.4 — 0.05 0.16 — 0.06 + 0.1 3 2 + 0.2 2.8 — 0.6 0.4 — 0.05 0.95 1.8 0.85 0.6 — 0.05 + 0.1 0.3 + 0.2 1.1— 0.1 + 0.1 + 0.1 0.65— 0.3 4 1 1.5 0—0.1 Hitachi Code EIAJ JEDEC MPAK—4 SC—61AA 12 BB503M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 13