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BRA124ETP

BRA124ETP

  • 厂商:

    HITACHI(日立)

  • 封装:

  • 描述:

    BRA124ETP - PNP Built-in Resistor Transistor TO-92 Series Inverter, Driver, Switching - Hitachi Semi...

  • 数据手册
  • 价格&库存
BRA124ETP 数据手册
BRA144ETP Series PNP Built-in Resistor Transistor TO–92 Series Inverter, Driver, Switching ADE-208-1446B (Z) Rev.2 Sep. 2001 Features • Built–in Resistor Type • Simplifies Circuit Design • Reduces Board Space • Complementary pair with BRC144ETP series Outline TO–92 2 R1 3 R2 3 2 1 1. Ground (Emitter) 2. Output (Collector) 3. Input (Base) 1 Note: Input resistance is shown in below Device BRA144ETP BRA124ETP BRA114ETP BRA143ETP BRA123ETP R1 (kΩ) 47 22 10 4.7 2.2 R2 (kΩ) 47 22 10 4.7 2.2 BRA144ETP Series Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Input voltage BRA144ETP BRA124ETP BRA114ETP BRA143ETP BRA123ETP Output current Total power dissipation Storage temperature IO PT Tstg Symbol VCC VI Ratings –50 +10 to –50 +10 to –50 +10 to –50 +10 to –35 +10 to –24 –100 400 −55 to +150 mA mW °C Unit V V Rev.2, Sep. 2001, page 2 of 12 BRA144ETP Series Electrical Characteristics (Ta = 25°C) Item Input on voltage BRA144ETP BRA124ETP BRA114ETP BRA143ETP BRA123ETP Input off voltage BRA144ETP BRA124ETP BRA114ETP BRA143ETP BRA123ETP Output saturation current Output cutoff current DC current transfer ratio BRA144ETP BRA124ETP BRA114ETP BRA143ETP BRA123ETP Input resistance BRA144ETP BRA124ETP BRA114ETP BRA143ETP BRA123ETP Resistance ratio R1/R2 R1 VO(on) IO(off) Gi VI(off) Symbol VI(on) Min –1.5 –1.3 –1.2 –1.1 –1.1 –1.0 –1.0 –1.0 –1.0 –1.0   70 56 30 20 20 33 15 7 3.3 1.5 0.8 Typ                  47 22 10 4.7 2.2 1.0 Max –4.5 –3.0 –2.4 –2.0 –1.8 –1.5 –1.5 –1.5 –1.5 –1.5 –0.3 –0.5      61 28 13 6.1 2.8 1.2 kΩ VCC = –5 V, IO = –10 mA VCC = –5 V, IO = –20 mA V µA IO = –10 mA, II = –0.5 mA VCC = –50 V, II = 0 VCC = –5 V, IO = –5 mA V VCC = –5 V, IO = –100 µA Unit V Test conditions VCC = –0.3 V, IO = –5 mA Rev.2, Sep. 2001, page 3 of 12 BRA144ETP Series Total Power Dissipation Curve 800 Total Power Dissipation PT (mW) 600 400 200 0 50 100 150 200 Ambient Temperature Ta (°C) Rev.2, Sep. 2001, page 4 of 12 BRA144ETP Series Main Characteristics (BRA144ETP) Output Current vs. Supply Voltage RL = 0 Pulse test –100 Output Current IO (mA) –60 –40 –20 –0.6 –0.5 –0.4 DC Current Gain Gi –80 –1.0 –0.9 –0.8 –0.7 200 DC Current Gain vs. Output Current VCC = –5 V RL = 0 Pulse test 75˚C 100 25˚C Ta = –25˚C 0 –1 –10 Output Current IO (mA) –100 –0.3 –0.2 II = –0.1 mA 0 –1 –2 –3 –4 Supply Voltage VCC (V) Input Voltage vs. Output Current VCC = –0.3 V RL = 0 Pulse test –5 –100 –10 Output Current vs. Input Voltage VCC = –5 V RL = 0 Pulse test Output Current IO (mA) VI (V) –1.0 –10 Ta = –25 ˚C Input Voltage –0.1 75˚C 25˚C –1.0 75˚C –0.1 –0.1 25 ˚C –0.01 Ta = –25˚C –1.0 –10 Output Current IO (mA) –100 –0.001 0 –0.5 –1.0 –1.5 –2.0 Input Voltage VI (V) –2.5 Output On Voltage VO(on) (V) Output On Voltage vs. Output Current –1.0 IO / II = 20 Pulse test Ta = –25 ˚C –0.1 25 ˚C 75 ˚C –0.01 –0.001 –0.1 –1.0 –10 –100 Output Current IO (mA) Rev.2, Sep. 2001, page 5 of 12 BRA144ETP Series Main Characteristics (BRA124ETP) Output Current vs. Supply Voltage –100 RL = 0 Pulse test DC Current Gain vs. Output Current 200 VCC = –5 V RL = 0 Pulse test Output Current IO (mA) DC Current Gain Gi –80 –60 –40 –20 –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 75 ˚C 100 –0.2 II = –0.1 mA 25 ˚C Ta = –25 ˚C 0 –1 –10 Output Current IO (mA) –100 0 –1 –2 –3 –4 Supply Voltage VCC (V) Input Voltage vs. Output Current –5 –100 –10 Output Current vs. Input Voltage VCC = –5 V RL = 0 Pulse test Output Current IO (mA) VI (V) VCC = –0.3 V RL = 0 Pulse test –1.0 –10 Ta = –25 ˚C 25 ˚C –1.0 75 ˚C Input Voltage –0.1 75 ˚C –0.01 Ta = –25 ˚C 25 ˚C –0.1 –0.1 –1.0 –10 Output Current IO (mA) –100 –0.001 0 –0.5 –1.0 –1.5 –2.0 Input Voltage VI (V) –2.5 Output On Voltage VO(on) (V) Output On Voltage vs. Output Current –1.0 IO / II = 20 Pulse test Ta = –25 ˚C –0.1 75 ˚C 25 ˚C –0.01 –0.001 –0.1 –1.0 –10 –100 Output Current IO (mA) Rev.2, Sep. 2001, page 6 of 12 BRA144ETP Series Main Characteristics (BRA114ETP) Output Current vs. Supply Voltage –100 RL = 0 Pulse test DC Current Gain vs. Output Current 200 VCC = –5 V RL = 0 Pulse test 75 ˚C 100 25 ˚C Output Current IO (mA) –0.7 –60 –40 –20 –0.6 –0.5 –0.4 –0.3 DC Current Gain Gi –80 –1.0 –0.9 –0.8 –0.2 II = –0.1 mA Ta = –25 ˚C –5 0 –1 –10 Output Current IO (mA) –100 0 –1 –2 –3 –4 Supply Voltage VCC (V) Input Voltage vs. Output Current –100 Output Current IO (mA) VI (V) VCC = –0.3 V RL = 0 Pulse test –10 Output Curent vs. Input Voltage VCC = –5 V RL = 0 Pulse test –1.0 –10 Ta = –25 ˚C –1.0 25 ˚C –0.1 –0.1 75 ˚C Input Voltage –0.1 75 ˚C –0.01 25 ˚C Ta = –25 ˚C –1.0 –10 Output Current IO (mA) –100 –0.001 0 –0.5 –1.0 –1.5 –2.0 Input Voltage VI (V) –2.5 Output On Voltage VO(on) (V) Output On Voltage vs. Output Current –1.0 IO / II = 20 Pulse test Ta = –25 ˚C –0.1 25 ˚C 75 ˚C –0.01 –0.001 –0.1 –1.0 –10 –100 Output Current IO (mA) Rev.2, Sep. 2001, page 7 of 12 BRA144ETP Series Main Characteristics (BRA143ETP) Output Current vs. Supply Voltage –100 RL = 0 Pulse test DC Current Gain vs. Output Current 200 VCC = –5 V RL = 0 Pulse test Output Current IO (mA) –60 –40 –20 –0.7 –0.6 –0.5 –0.4 –0.3 DC Current Gain Gi –80 –1.0 –0.9 –0.8 100 25 ˚C 75 ˚C II = –0.2 mA Ta = –25 ˚C 0 –1 –10 Output Current IO (mA) –100 0 –1 –2 –3 –4 Supply Voltage VCC (V) Input Voltage vs. Output Current –5 –100 –10 Output Current vs. Input Voltage VCC = –5 V RL = 0 Pulse test Output Current IO (mA) VI (V) VCC = –0.3 V RL = 0 Pulse test –1.0 –10 Ta = –25 ˚C –1.0 75 ˚C 25 ˚C –0.1 –0.1 –1.0 –10 Output Current IO (mA) –1.0 –100 Input Voltage –0.1 75 ˚C 25 ˚C –0.01 Ta = –25 ˚C –0.001 0 –0.5 –1.0 –1.5 –2.0 Input Voltage VI (V) –2.5 Output On Voltage vs. Output Current IO / II = 20 Pulse test 25 ˚C Output On Voltage VO(on) (V) –0.1 75 ˚C Ta = –25 ˚C –0.01 –0.001 –0.1 –1.0 –10 –100 Output Current IO (mA) Rev.2, Sep. 2001, page 8 of 12 BRA144ETP Series Main Characteristics (BRA123ETP) Output Current vs. Supply Voltage –100 RL = 0 Pulse test DC Current Gain vs. Output Curent 200 VCC = –5 V RL = 0 Pulse test Output Current IO (mA) –60 –40 –20 –0.8 –0.7 DC Current Gain Gi –80 –1.2 –1.1 –1.0 –0.9 100 25 ˚C Ta = –25 ˚C 75 ˚C –0.6 –0.5 II = –0.4 mA 0 –1 –2 –3 –4 Supply Voltage VCC (V) Input Voltage vs. Output Current –5 0 –1 –10 Output Current IO (mA) –100 –100 –10 Output Current IO (mA) VI (V) VCC = –0.3 V RL = 0 Pulse test –1.0 Output Current vs. Input Voltage VCC = –5 V RL = 0 Pulse test –10 Ta = –25 ˚C –1.0 25 ˚C 75 ˚C –0.1 –0.1 –1.0 –10 Output Current IO (mA) –100 Input Voltage –0.1 75 ˚C 25 ˚C –0.01 Ta = –25 ˚C –0.001 0 –0.5 –1.0 –1.5 –2.0 Input Voltage VI (V) –2.5 Output On Voltage VO(on) (V) Output On Voltage vs. Output Current –1.0 IO / II = 20 Ta = –25 ˚C Pulse test –0.1 25 ˚C 75 ˚C –0.01 –0.001 –0.1 –1.0 –10 –100 Output Current IO (mA) Rev.2, Sep. 2001, page 9 of 12 BRA144ETP Series Taping Specification Purchasing Identification Code: Type No. + Grade + TZ The tape is held in every 25 pitches to a hold box. Packing quantity is 2500 pieces. Max 25 pie ces/1 line More than 4 pieces removed E H W W 336 H 262 D 47 D B Unit: mm Rev.2, Sep. 2001, page 10 of 12 BRA144ETP Series Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 3.8 ± 0.4 2.3 Max 0.55 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g Rev.2, Sep. 2001, page 11 of 12 BRA144ETP Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : -538-6533/538-8577 Fax : -538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : -(2)-2718-3666 Fax : -(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : -(2)-735-9218 Fax : -(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.2, Sep. 2001, page 12 of 12
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