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HA17485FP

HA17485FP

  • 厂商:

    HITACHI(日立)

  • 封装:

  • 描述:

    HA17485FP - Dual Operational Amplifier - Hitachi Semiconductor

  • 数据手册
  • 价格&库存
HA17485FP 数据手册
HA17458 Series Dual Operational Amplifier Description HA17458 is dual operational amplifiers which provides internal phase compensation and high performance. It can be applied widely to measuring control equipment and to general use. Features • • • • High voltage gain: 100dB (Typ) Wide output amplitude: ±13V (Typ) [at RL ≥ 2kΩ ] Protected from output shortcircuit Internal phase compensation Ordering Information Type No. HA17485FP HA17458F HA17458 HA17458PS Application Industrial use Commercial use Commercial use Industrial use Package FP-8D FP-8D DP-8 DP-8 HA17458 Series Pin Arrangement Vout1 1 Vin(–)1 2 Vin(+)1 3 VEE 4 –+ 1 +– 2 8 VCC 7 Vout2 6 Vin(–)2 5 Vin(+)2 (Top View) Circuit Schematic (1/2) VCC Vin(+) Vin(–) Vout to VEE to VCC to VCC VEE 2 HA17458 Series Absolute Maximum Ratings (Ta = 25°C) Ratings Item Supply voltage Symbol VCC VEE Intput voltage Differential input voltage Power dissipation Operating temperature Storage temperature VIN* 3 HA17458 HA17458PS HA17458F HA17458FP Unit V V V V +18 –18 ±15 ±30 670* 1 +18 –18 ±15 ±30 670* 1 +18 –18 ±15 ±30 385* 2 +18 –18 ±15 ±30 385* 2 VIN(diff) PT Topr Tstg mW °C °C –20 to +75 –55 to +125 –20 to +75 –55 to +125 –20 to +75 –55 to +125 –20 to +75 –55 to +125 Notes: 1. These are the allowable values up to Ta = 45 °C. Derate by 8.3mW/°C above that temperature. 2. These are the allowable values up to Ta = 31 °C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/°C above that temperature. 3. If the supply voltage is less than ±15V, input voltage should be less than supply voltage. 3 HA17458 Series Electrical Characteristics 1 (VCC = –VEE = 15V, Ta = 25°C) Item Input offset voltage Input offset current Input bias current Line regulation Symbol VIO I IO I IB ∆ VIO/∆ VCC ∆ VIO/∆ VEE Voltage gain Common mode rejection ratio Common mode input voltage range Peak-to-peak output voltage Power dissipation Slew rate Input resistance Input capacitance Output resistance AVD CMR VCM Vop-p Pd SR Rin Cin Rout Min — — — — — 86 70 ±12 ±12 — — 0.3 — — Typ 2.0 6 30 30 30 100 90 ±13 ±14 90 0.6 1.0 6.0 75 Max 6.0 200 500 150 150 — — — — 200 — — — — Unit mV nA nA µV/V µV/V dB dB V V mW V/ µs MΩ pF Ω RL = 10kΩ No load, 2 channel AVD = 1 RS ≤ 10kΩ RS ≤ 10kΩ RL ≥ 2kΩ, Vout = ±10V RS ≤ 10kΩ Test conditions RS ≤ 10kΩ Electrical Characteristics 2 (VCC = –VEE = 15V, Ta = –20 to +75°C) Item Input offset voltage Input offset current Input bias current Voltage gain Peak-to-peak output voltage Symbol VIO I IO I IB AVD Vop-p Min — — — 80 ±10 Typ — — — — ±13 Max 9.0 400 1100 — — Unit mV nA nA dB V RL ≥ 2kΩ, Vout = ±10V RL = 2kΩ Test conditions RS ≤ 10kΩ 4 HA17458 Series Characteristic Curves Input Offset Voltage vs. Ambient Temperature 5 Input Offset Voltage VIO (mV) Input Bias Current IIB (nA) VCC = + 15 V VEE = –15 V RS < 10 kΩ = 100 VCC = + 15 V VEE = –15 V 80 Input Bias Current vs. Ambient Temperature 4 3 60 2 40 1 20 0 –20 0 20 40 60 80 0 –20 0 20 40 60 80 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Input Offset Current vs. Ambient Temperature 20 Input Offset Current IIO (nA) Power Dissipation Pd (mW) VCC = + 15 V VEE = –15 V 16 200 Power Dissipation vs. Ambient Temperature VCC = + 15 V VEE = –15 V No Load Both Amplifiers 12 100 8 4 0 –20 0 20 40 60 80 0 –20 0 20 40 60 80 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) 5 HA17458 Series Voltage Gain vs. Ambient Temperature 120 Output Short Current IOS (mA) VCC = + 15 V VEE = –15 V RL = 2 kΩ 50 VCC = + 15 V VEE = –15 V VOP-P = 0 V Output Short Current vs. Ambient Temperature Voltage Gain AVD (dB) 110 40 100 30 Source 20 Sink 10 90 80 70 –20 0 20 40 60 80 0 –20 0 20 40 60 80 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) 200 Power Dissipation Pd (mW) Ta = 25°C No Load Both Amplifiers Maximum Output Voltage Swing VOP-P (V) Power Dissipation vs. Supply Voltage Maximum Output Voltage Swing vs. Supply Voltage 20 Ta = 25°C RL = 2 kΩ 150 16 12 100 +V 8 OP -P OP -P –V 50 4 0 ±3 ±6 ±9 ±12 ±15 Supply Voltage VCC, VEE (V) ±18 0 ±3 ±6 ±9 ±12 ±15 Supply Voltage VCC, VEE (V) ±18 6 HA17458 Series Voltage Gain vs. Frequency 120 VCC = +15 V VEE = –15 V Ta = 25°C RL = 2 kΩ 100 Voltage Gain AVD (dB) 80 60 40 20 0 10 30 100 300 1k 3 k 10 k Frequency (Hz) 30 k 100 k 300 k 1M Phase Angle vs. Frequency 0 VCC = +15 V VEE = –15 V Ta = 25°C RL = 2 kΩ –40 Phase Angle (deg) –80 –120 –160 100 300 1k 3k 10 k 30 k Frequency (Hz) 100 k 300 k 1M 3M 7 HA17458 Series Maximum Output Voltage Swing vs. Frequency Maximum Output Voltage Swing Vop-p (V) VCC = +15 V VEE = –15 V Ta = 25°C RL = 10 kΩ Maximum Output Voltage Swing Vop-p (V) 28 24 20 16 12 8 4 0 Maximum Output Voltage Swing vs. Load Resistance 16 12 8 4 0 –4 –8 –12 –16 200 500 1k 5k 10k Load Resistance RL (Ω) Voltage Follower Large Signal Pulse Response 10 Input and Output Voltage (V) VCC = +15 V VEE = –15 V R L = 2 kΩ CL = 100 pF Ta = 25°C VCC = +15 V VEE = –15 V Ta = 25°C 100 500 1k 5k 10k 50k 100k Frequency f (Hz) 500k Output 0 Input –10 0 20 40 60 Time (µs) 80 8 HA17458 Series Package Dimensions Unit: mm 9.6 10.6 Max 8 5 6.3 7.4 Max 1 0.89 4 1.3 2.54 Min 5.06 Max 1.27 Max 7.62 0.1 Min 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Mass (reference value) + 0.10 2.54 ± 0.25 0.48 ± 0.10 DP-8 Conforms Conforms 0.54 g Unit: mm 4.85 5.25 Max 5 8 4.4 1 4 *0.22 ± 0.05 0.20 ± 0.04 2.03 Max 0.75 Max 0.25 6.50 + 0.15 – 1.05 0° – 8° 0.10 ± 0.10 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.25 0.60 + 0.18 – 0.15 0.12 M *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8D — Conforms 0.10 g 9 HA17458 Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10
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