HAF2007S

HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st. Edition Dec. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline DPAK–2 2, 4 D 4 4 1 G Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 12 S 3 3 12 3 1. Gate 2. Drain 3. Source 4. Drain HAF2007(L), HAF2007(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 60 (16) (–2.5) 5 10 5 20 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate non shut down) I IH(sd)1 I IH(sd)2 Min 3.5 — — — — — — — 3.5 Typ — — — — — 0.8 0.35 175 — Max — 1.2 100 50 1 — — — 12 Unit V V µA µA µA mA mA °C V Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions Shut down temperature Tsd Gate operation voltage Vop 2 HAF2007(L), HAF2007(S) Electrical Characteristics (Ta = 25°C) Item Drain current Drain current Symbol Min I D1 I D2 (5) — 60 (16) (–2.5) — — — — — — — 1.0 — — (5) — — — — — — — — — Typ — — — — — — — — — 0.8 0.35 — — 100 70 (18) (260) ( ( ( ( ) ) ) ) Max — 10 — — — 100 50 1 –100 — — 10 2.25 160 100 — — — — — — — — — — Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF µs µs µs µs V ns ms ms I F = 2.5A, VGS = 0 I F = 5A, VGS = 0 diF/ dt =50A/µs VGS = 5V, VDD = 12V VGS = 5V, VDD = 24V Test Conditions VGS = 3.5V, VDS = 2V VGS = 1.2V, VDS = 2V I D = 10mA, VGS = 0 I G = (300µA), VDS = 0 I G = (–100µA), VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = 0 VGS = 1.2V, VDS = 0 VGS = –2.4V, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 2.5A, VGS = 4V Note3 I D = 2.5A, VGS = 10V Note3 I D = 2.5A, VDS = 10V Note3 VDS = 10V , VGS = 0 f = 1 MHz I D = 2.5A, VGS = 5V RL = 12Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current I GSS1 I GSS2 I GSS3 I GSS4 Input current (shut down) I GS(op)1 I GS(op)2 Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Over load shut down operation time Note: Note4 I DSS VGS(off) RDS(on) RDS(on) |yfs| Coss t d(on) tr t d(off) tf VDF t rr t os1 t os2 (1.0) ( ( ( ) ) ) 3. Pulse test 4. Include the time shift based on increasing of chennel temperature when operete under over load condition. 3 HAF2007(L), HAF2007(S) Main Characteristics Power vs. Temperature Derating 40 Pch (W) Channel Dissipation 30 20 10 0 50 100 150 Tc (°C) 200 Case Temperature 4 HAF2007(L), HAF2007(S) Package Dimensions Unit: mm 1.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.7 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 16.2 ± 0.5 4.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 1.2 Max 5.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 2.5 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 0 ~ 0.25 0.55 ± 0.1 2.29 ± 0.5 1.2 ± 0.3 L type S type Hitachi EIAJ ( L type) EIAJ ( S type) JEDEC DPAK–2 SC–63 SC–64 — 5 HAF2007(L), HAF2007(S) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 6