HAT1029R

HAT1029R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-522 (Z) 1st. Edition May 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1029R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –20 ±10 –3.5 –28 –3.5 Unit V V A A A W W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 2 3 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 HAT1029R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min –20 ±10 — — –0.5 — — 3 — — — — — — — — — Typ — — — — — 0.10 0.16 4.5 465 270 100 14 80 70 80 –0.95 55 Max — — ±10 –1 –1.5 0.14 0.23 — — — — — — — — –1.24 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –3.5A, VGS = 0 Note4 IF = –3.5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±8V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10V, I D = –1mA I D = –2A, VGS = –4V Note4 I D = –2A, VGS = –2.5V Note4 I D = –2A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –4V, ID = –2A VDD ≅ –10V 3 HAT1029R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 –100 –30 –10 –3 –1 PW DC Op er Maximum Safe Operation Area 10 µs 100 µs 1m = s Channel Dissipation Drain Current 10 2.0 1 Dr m 1.0 ive 2 ive Dr Op er at ion s at Op er at ion 0 50 100 150 Ta (°C) 200 Ambient Temperature Ta = 25 °C –0.03 1 shot Pulse –0.01 1 Drive Operation –1 –3 –10 –30 –100 –0.1 –0.3 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) (P –0.3 Operation in WN this area is < ote 10 5 –0.1 limited by R DS(on) s) ion Typical Output Characteristics –10 –10 V –5 V –4 V –3.5 V –3 V Pulse Test (A) Typical Transfer Characteristics –10 I D (A) –8 –8 –2.5 V –6 Tc = –25 °C 25 °C 75 °C ID Drain Current –2 V –6 Drain Current –4 –4 –2 VGS = –1.5 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) –2 V DS = –10 V Pulse Test 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 4 HAT1029R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( Ω ) –0.5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 –4 V –0.4 –0.3 VGS = –2.5 V –0.2 I D = –2 A –1 A –0.5 A –6 –2 –4 Gate to Source Voltage –10 V GS (V) –8 0.05 –0.1 0.02 0.01 –0.1 –0.2 0 –0.5 –1 –2 –5 Drain Current I D (A) –10 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Forward Transfer Admittance vs. Drain Current 20 10 Tc = –25 °C 5 25 °C 75 °C 0.4 I D = –2 A –1 A –0.5 A 0.3 2 1 0.5 0.2 –0.1 –0.2 0.2 V GS = –2.5 V 0.1 –4 V 0 –40 –2 A, –1 A, –0.5 A V DS = –10 V Pulse Test –0.5 –1 –2 –5 Drain Current I D (A) –10 0 40 80 120 160 Case Temperature Tc (°C) 5 HAT1029R Body–Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 2000 1000 500 Ciss Coss 200 100 50 20 0 VGS = 0 f = 1 MHz –4 –8 –12 –16 –20 Crss Typical Capacitance vs. Drain to Source Voltage 20 10 di / dt = 20 A / µs VGS = 0, Ta = 25 °C 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) Capacitance C (pF) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) VDD = –5 V –10 V –20 V I D = –3.5 A V GS (V) 0 0 500 Switching Characteristics Switching Time t (ns) –10 –2 200 100 50 t d(off) tf tr 20 10 t d(on) V GS = –4 V, V DD = –10 V PW = 3 µs, duty < 1 % –0.5 –1 –2 –5 Drain Current I D (A) –10 Drain to Source Voltage –20 V DS –4 –30 V DD = –20 V –10 V –5 V V GS –6 –40 –50 0 –8 4 8 12 16 Gate Charge Qg (nc) –10 20 Gate to Source Voltage 5 –0.1 –0.2 6 HAT1029R Reverse Drain Current vs. Souece to Drain Voltage –10 Reverse Drain Current I DR (A) V GS = –5 V –8 –6 0, 5 V –4 –2 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin Switching Time Waveform 10% 90% Vin –4 V 50 Ω V DD = –10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 7 HAT1029R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 p ot uls e θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 125 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 1s h D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 10 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 uls e 0.01 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 166 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 1 sh p ot D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 8 HAT1029R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 – 8° 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP–8DA — MS-012AA 9 HAT1029R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10