HAT1036R

HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features • Low on-resistance R DS(on) = 11 mΩ typ • Capable of -4 V gate drive • Low drive current • High density mounting Outline SOP–8 8 5 76 56 7 8 DD D D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 HAT1036R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -30 ±20 -12 -96 -12 2.5 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Symbol Min -30 — — -1.0 — — 12 — — — — — — — — — — — — Typ — — — — 11 21 20 4200 870 360 70 12 14 120 350 100 120 -0.85 55 Max — ±0.1 -1 -2.5 14 34 — — — — — — — — — — — -1.11 — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = -12 A, VGS = 0 Note1 I F = -12 A, VGS = 0 diF/ dt = 20 A/ µs Test Conditions I D = -10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -6 A, VGS = -10 V Note1 I D = -6 A, VGS = -4 V Note1 I D = -6 A, VDS = -10 V Note1 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -10 V I D = -12 A VGS = -4 V, ID = -6 A VDD ≅ -10 V Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 2 HAT1036R Main Characteristics Power vs. Temperature Derating 4.0 -500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 Maximum Safe Operation Area 10 µs 10 0µ s 1 Pch (W) I D (A) -100 PW Op era tio n( -10 Channel Dissipation Drain Current DC =1 ms 0m 2.0 s 1.0 -1 Operation in this area is limited by R DS(on) -0.1 PW N < 1 ote 0s 4 ) 0 50 100 150 Ta (°C) 200 Ambient Temperature Ta = 25 °C 1 shot Pulse -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics -50 -10V -5 V -50 -4 V Pulse Test Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) -30 -3.5 V -20 Drain Current Drain Current ID (A) -40 -40 -30 -20 25°C –25°C 0 -1 -2 -3 Gate to Source Voltage -5 -4 V GS (V) -10 VGS = -3 V -10 Tc = 75°C 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 3 HAT1036R Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test -0.4 Drain to Source On State Resistance R DS(on) (m Ω) -0.5 Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 5 VGS = -4 V -10 V Drain to Source Voltage -0.3 -0.2 I D = -10 A -5 A -2 A 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) -0.1 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (m Ω) Pulse Test 40 I D = -2 A, -5 A, -10 A 30 V GS = -4 V 20 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 50 Forward Transfer Admittance vs. Drain Current 100 30 10 75 °C 3 1 0.3 0.1 -0.1 V DS = -10 V Pulse Test -0.3 -1 -3 -10 -30 -100 25 °C Tc = –25 °C 10 -10 V 0 –40 -2 A, -5 A, -10 A 0 40 80 120 160 Case Temperature Tc (°C) Drain Current I D (A) 4 HAT1036R Body–Drain Diode Reverse Recovery Time 100 10000 Ciss 3000 1000 300 100 30 10 0 -10 -20 -30 VGS = 0 f = 1 MHz -40 -50 Coss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 50 Capacitance C (pF) Crss 20 di/dt = 20 A/µs VGS = 0, Ta = 25°C -5 -10 -20 I DR (A) 10 -0.1 -0.2 -0.5 -1 -2 Reverse Drain Current Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 0 VDD = –5 V –10 V –25 V 1000 Switching Characteristics V DS (V) V GS (V) 500 Switching Time t (ns) –10 –4 tr Drain to Source Voltage Gate to Source Voltage 200 100 t d(on) 50 –20 V DS V DD = –25 V –10 V –5 V I D = –12 A 40 80 120 160 Gate Charge Qg (nc) V GS –8 tf t d(off) –30 –12 –40 –50 0 –16 20 –20 200 10 -0.1 -0.2 V GS = -4 V, V = -10 V DS RG = 50 Ω , duty < 1 % -0.5 -1 -2 -5 -10 Drain Current I D (A) -20 5 HAT1036R Reverse Drain Current vs. Souece to Drain Voltage 50 Reverse Drain Current I DR (A) -10 V V GS = 0 -5 V 40 30 20 10 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 83.3 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) u tp lse PDM PW T 0.001 1sh o D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) 6 HAT1036R Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin –4 V 50 Ω V DD = –10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Switching Time Waveforms 7 HAT1036R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 – 8° 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP–8DA — MS-012AA 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.