HAT2028R

HAT2028R/HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-524C (Z) 4th. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2028R/HAT2028RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2028R HAT2028RJ Avalanche energy HAT2028R HAT2028RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings 60 ± 20 4 32 4 — 4 Unit V V A A A — A — mJ W W °C °C EAR Note4 — 1.37 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω 2 HAT2028R/HAT2028RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdownvoltage Gate to source breakdownvoltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2028R Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 60 ± 20 — — — — — 1.3 — — 3.3 — — — — — — — — — Typ — — — — — — — — 0.08 0.12 5 280 150 55 15 100 35 45 0.88 40 Max — — ± 10 1 0.1 — 10 2.3 0.1 0.16 — — — — — — — — 1.15 — Unit V V µA µA µA µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 4 A, VGS = 0 Note5 IF = 4 A, VGS = 0 diF/ dt = 50 A/µs VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, I D = 1 mA I D = 2 A, VGS = 10 V Note5 I D = 2 A, VGS = 4 V Note5 I D = 2 A, VDS = 10 V Note5 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 2 A VDD ≅ 30 V Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 60 V, VGS = 0 HAT2028RJ I DSS HAT2028R I DSS HAT2028RJ I DSS VGS(off) RDS(on) RDS(on) Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forwardvoltage Body–drain diode reverse recovery time Note: 5. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 HAT2028R/HAT2028RJ Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) 100 30 10 3 Maximum Safe Operation Area 10 µs 10 0µ s Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 Channel Dissipation Drain Current DC PW 1m = s 2.0 1 Dr 1 0.3 0.1 Op 10 er ati ms 1.0 ive 2 ive Dr Op er at ion at ion er Op Operation in this area is limited by R DS(on) on (P W N < ote 10 6 s) 0 50 100 150 Ta (°C) 200 Ambient Temperature Ta = 25°C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 6 : When using the glass epoxy board (FR4 40x40x1.6 mm) 20 Typical Output Characteristics 10V 8 V 6V 5V 4.5 V 4V 3.5 V 3V Pulse Test VGS = 2.5 V (A) Typical Transfer Characteristics 20 –25°C Tc = 75°C 12 25°C I D (A) 16 16 12 Drain Current 8 Drain Current ID 8 4 4 V DS = 10 V Pulse Test 0 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 2 4 6 Gate to Source Voltage 10 8 V GS (V) 4 HAT2028R/HAT2028RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 VGS = 4 V 0.1 10 V Pulse Test 0.4 0.3 0.2 ID=2A 1A 0.5 A 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.1 0 Drain to Source On State Resistance R DS(on) ( Ω ) 0.5 Drain to Source Saturation Voltage V DS(on) (V) 0.05 0.02 0.01 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.20 I D = 0.5, 1, 2 A Forward Transfer Admittance vs. Drain Current 20 10 5 25 °C Tc = –25 °C 0.15 VGS = 4 V 0.5, 1, 2 A 10 V 2 1 0.5 0.2 0.2 75 °C 0.10 0.05 0 –40 V DS = 10 V Pulse Test 1 0.5 2 5 10 Drain Current I D (A) 20 0 40 80 120 160 Case Temperature Tc (°C) 5 HAT2028R/HAT2028RJ Body–Drain Diode Reverse Recovery Time 1000 500 Capacitance C (pF) 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 200 100 50 Crss 20 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Coss 200 100 50 20 10 di/dt = 50 A/µs V GS = 0, Ta = 25°C 5 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) V GS (V) 100 I D= 4 A 20 1000 300 100 30 10 3 Switching Characteristics Switching Time t (ns) 80 16 V DD = 10 V 25 V 50 V V GS V DD = 50 V 25 V 10 V tr tf t d(off) t d(on) V GS = 4 V, V DD = 30 V PW = 3 µs, duty < 1 % 0.5 1 2 5 Drain Current I D (A) 10 Drain to Source Voltage 60 V DS 12 40 8 20 4 0 10 Gate to Source Voltage 0 2 4 6 8 Gate Charge Qg (nc) 1 0.1 0.2 6 HAT2028R/HAT2028RJ Reverse Drain Current vs. Souece to Drain Voltage Repetive Avalanche Energy E AR (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating 2.5 I AP = 4 A V DD = 25 V L = 100 µH duty < 0.1 % Rg > 50 Ω 20 Reverse Drain Current I DR (A) 16 V GS = 5 V 12 0, –5 V 2.0 1.5 8 1.0 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 0.5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 Ω V DD = 30 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout 7 HAT2028R/HAT2028RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 p ot uls e θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 125 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 1s h D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 10 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 lse 0.01 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 166 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) pu PDM PW T 0.001 1s t ho D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 8 HAT2028R/HAT2028RJ Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 – 8° 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP–8DA — MS-012AA 9 Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.