HAT3008R

HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Unit Pch – 60 ± 20 – 3.5 – 28 – 3.5 V V A A A VDSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note1 60 ±20 5 40 5 — 5 — – 3.5 — 1.05 2 3 150 –55 to + 150 — A — mJ W W °C °C EAR — 2.14 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω 2 HAT3008R/HAT3008RJ Electrical Characteristics (Ta = 25°C) ( N Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT3008R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS 60 ± 20 — — — — — 1.2 — — 6 — — — — — — — — Typ — — — — — — — — 0.043 0.056 9 520 270 100 11 40 110 80 0.84 Max — — ± 10 1 0.1 — 10 2.2 0.058 0.084 — — — — — — — — 1.1 Unit V V µA µA µA µA µA V Ω Ω S pF pF pF ns ns ns ns V IF = 5 A, VGS = 0 Note4 IF =5 A, VGS = 0 diF/ dt = 50 A/µs VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, I D = 1 mA I D = 3 A, VGS = 10 V Note4 I D = 3 A, VGS = 4 V Note4 I D = 3 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1MHz VGS =10 V, ID = 3 A VDD ≅ 30 V Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 60 V, VGS = 0 HAT3008RJ I DSS HAT3008R I DSS HAT3008RJ I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 5. Pulse test — 40 — ns 3 HAT3008R/HAT3008RJ ( P Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT3008R HAT3008RJ HAT3008R HAT3008RJ Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS I DSS I DSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr – 60 ± 20 — — — — — –1.2 — — 3 — — — — — — — — — Typ — — — — — — — — 0.12 0.16 4.5 600 290 75 11 30 100 55 Max — — ±10 –1 –0.1 — –10 –2.2 0.15 0.23 — — — — — — — — Unit V V µA µA µA µA µA V Ω Ω S pF pF pF ns ns ns ns IF = – 3.5 A, VGS = 0 Note4 IF = – 3.5 A, VGS = 0 diF/ dt = 50 A/µs VDS = – 48 V, VGS = 0 Ta = 125°C VDS = – 10 V, I D = – 1mA I D = – 2 A, VGS = – 10 V Note4 I D = – 2 A, VGS = – 4 V Note4 I D = – 2 A, VDS = –10 V Note4 VDS = –10 V VGS = 0 f = 1MHz VGS = –10 V, ID = – 2 A VDD ≅ – 30 V Test Conditions I D = – 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = – 60 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 5. Pulse test – 0.98 – 1.28 V 70 — ns 4 HAT3008R/HAT3008RJ Main Characteristics ( N Channel ) Power vs. Temperature Derating 4.0 Pch (W) Maximum Safe Operation Area 100 10 µs I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 30 10 3 1 DC Op er 10 PW 3.0 0 1 = 10 ms m µs s Channel Dissipation Drain Current 2 ive Dr 2.0 1 Dr (1 sh 1.0 ive Op er at ion 0.3 Operation in (P this area is WN < ote 0.1 limited by R DS(on) 10 5 at ot ) Op er ion at ion 0.03 150 200 0 50 100 Ambient Temperature Ta (°C) 0.01 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Ta = 25 °C 1 shot pulse s) Typical Output Characteristics 10 10 V 4V 3.5 V 3V Pulse Test 10 Typical Transfer Characteristics V DS = 10 V Pulse Test (A) ID I D (A) 8 8 6 6 25°C 4 Tc = 75°C –25°C Drain Current 4 2.5 V 2 VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current 2 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 5 HAT3008R/HAT3008RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 10 V Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.4 0.3 ID=5A 0.2 2A 1A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0.1 Drain to Source On State Resistance R DS(on) ( Ω ) 0.5 0.05 0.02 0.01 0.1 0.3 1 3 Drain Current 10 30 I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 1, 2 A ID=5A 0.08 V GS = 4 V 1, 2, 5 A 0.04 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 V DS = 10 V Pulse Test Tc = –25 °C 25 °C 75 °C 20 10 5 2 1 0.5 0.1 0.12 0.2 1 2 5 0.5 Drain Current I D (A) 10 6 HAT3008R/HAT3008RJ Body–Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 20 10 5 0.1 di / dt = 50 A / µs V GS = 0, Ta = 25 °C Capacitance C (pF) 2000 1000 500 200 100 50 20 10 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Crss Ciss Typical Capacitance vs. Drain to Source Voltage Coss Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 I D = 5A 20 1000 300 Switching Time t (ns) Switching Characteristics 80 V GS 60 V DS V DD = 10 V 25 V 50 V 16 t d(off) 100 30 10 3 1 0.1 tf tr t d(on) Drain to Source Voltage 12 40 8 20 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 Gate to Source Voltage V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.2 1 0.5 Drain Current 5 2 I D (A) 10 0 7 HAT3008R/HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) 10 10 V 8 5V 6 V GS = 0, –5 V 2.5 I AP = 5 A V DD = 25 V L = 100 µH duty < 0.1 % Rg > 50 Ω 2.0 1.5 4 1.0 2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 0.5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% 8 HAT3008R/HAT3008RJ ( P Channel ) 4.0 Power vs. Temperature Derating Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s –100 –30 Maximum Safe Operation Area Pch (W) 10 µs I D (A) 3.0 –10 –3 PW DC Op 10 1 = 10 0µ s m s Channel Dissipation Drain Current 2 Dr 2.0 –1 ms ive ion at er Op 1 1.0 Dr –0.3 –0.1 ive Op er at at ion Operation in (P this area is WN < ote limited by R DS(on) 1 0 er ion 150 200 –0.03 0 50 100 –0.01 –0.1 –0.3 Ta = 25 °C 1 shot pulse –1 –3 –10 s) 6 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Note 6 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics –10 –10 V –5 V –4 V –10 –3.5 V Pulse Test Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) ID –3 V (A) Drain Current –8 –8 –6 –6 Drain Current –4 –4 Tc = 75 °C –2 –25 °C 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 25 °C –2 VGS = –2.5 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 9 HAT3008R/HAT3008RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.4 Drain to Source On State Resistance R DS(on) ( Ω ) –0.5 –0.3 I D = –2 A –0.2 –1 A –0.1 –0.5 A VGS = –4 V –10 V 0.05 0.02 0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –4 –8 –12 Gate to Source Voltage –16 –20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 I D = –2 A –1 A –0.5 A 0.2 V GS = –4 V –2 A –0.5, –1 A 20 10 5 2 1 0.5 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test Ta = –25 °C 25 °C 75 °C 0.3 0.1 0 –40 –10 V 0 40 80 120 160 Case Temperature Tc (°C) 0.2 –0.5 –1 –2 –5 –0.1 –0.2 Drain Current I D (A) –10 10 HAT3008R/HAT3008RJ Body–Drain Diode Reverse Recovery Time 500 2000 1000 200 100 50 VGS = 0 f = 1 MHz Ciss 500 200 100 50 Crss 10 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 20 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Coss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 20 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) Capacitance C (pF) 0 Dynamic Input Characteristics V DD = –10 V –25 V –50 V I D = –3.5 A Switching Characteristics 0 1000 V DS (V) V GS (V) Switching Time t (ns) –20 –4 300 100 tf 30 10 3 1 –0.1 –0.2 V GS = –10 V, V DD = –30 V Pw = 5 µs, duty < 1 % t d(off) Drain to Source Voltage –40 V DS V DD = –50 V –25 V –10 V V GS –8 Gate to Source Voltage –60 –12 tr t d(on) –80 –100 0 –16 –20 40 32 8 16 24 Gate Charge Qg (nc) –0.5 –1 –2 –5 Drain Current I D (A) –10 11 HAT3008R/HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) Repetive Avalanche Energy E AR (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating 2.5 I AP = –3.5 A V DD = –25 V L = 100 µH duty < 0.1 % Rg > 50 Ω –8 2.0 –6 –10 V –4 V GS = 0, 5 V –5 V 1.5 1.0 –2 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 0.5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin -15 V D. U. T 50 Ω 0 Switching Time Test Circuit Switching Time Waveform Vin Monitor D.U.T. RL 90% Vin -10 V 50 Ω V DD = –30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% VDD 12 HAT3008R/HAT3008RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 p ot uls e θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 125 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 1s h D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 10 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 lse 0.01 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 166 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) pu PDM PW T 0.001 1s t ho D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 13 HAT3008R/HAT3008RJ Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 – 8° 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP–8DA — MS-012AA 14 HAT3008R/HAT3008RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 15