HL1326MF
InGaAsP Laser Diodes
Description
The HL1326MF is a 1.3 µm InGaAsP Fabry Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication systems and other applied optical equipment. It has high optical power with low drive current and wide operating temperature range (–40 to +85°C). The compact package is suitable for module assembly.
Features
• Wide operating temperature range: Topr = –40 to +85°C • High output power: 10 mW (Pulse) 5 mW (CW) • Low operating current: Iop (PO = 5 mW) = 20 mA (Typ @TC = 25°C) Iop (PO = 5 mW) = 40 mA (Typ @TC = 85°C)
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HL1326MF
Absolute Maximum Ratings (TC = 25°C)
Item Optical output power Symbol PO Rated Value 10 (Pulse) * 5 (CW) LD reverse voltage PD reverse voltage PD forward current Operating temperature Storage temperature Note: VR (LD) VR (PD) I F (PD) Topr Tstg 2 15 1 –40 to +85 –40 to +100
1
Unit mW mW V V mA °C °C
1. Maximum 50% duty cycle, maximum 1 µs pulse width
Optical and Electrical Characteristics (TC = 25°C)
Item Threshold current Optical output power Slope efficiency Symbol Ith PO ηs λc σ θ// θ⊥ tr tf Is I (DARK) Ct Min — 5 0.3 0.15 Lasing wavelength Spectral width Beam divergence (parallel) Beam divergence (perpendicular) Rise time Fall time Monitor current PD dark current PD capacitance Typ 8 — 0.4 0.25 Max 20 — — — Unit mA mW mW/mA Kink free* 1 TC = 25°C TC = 85°C PO = 5 mW, RMS PO = 5 mW, RMS PO = 5 mW, FWHM PO = 5 mW, FWHM 10 to 90% 90 to 10% PO = 5 mW, VR(PD) = 5 V VR(PD) = 5 V VR(PD) = 5 V, f = 1 MHz Test Conditions
1280 1310 1340 nm — — — — — 100 — — — 2 30 40 — — — — 15 — — — — 0.5 0.5 — 350 20 2 nm deg. deg. ns ns µA nA pF V
Photosensitivity saturation voltage VR(S) Note:
1. Kink free up to 5mW is confirmed at the tempratures of 10 °C, 25°C and 85°C.
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HL1326MF
Typical Characteristic Curves
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HL1326MF
Typical Characteristic Curves (cont)
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HL1326MF
Typical Characteristic Curves (cont)
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HL1326MF
Typical Characteristic Curves (cont)
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HL1326MF
Typical Characteristic Curves (cont)
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