HN58S65AT-15

HN58S65A Series 64 k EEPROM (8-kword × 8-bit) Ready/Busy function ADE-203-691A (Z) Preliminary Rev. 0.3 Nov. 1997 Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features • Single supply: 2.2 to 3.6 V • Access time: 150 ns (max) • Power dissipation  Active: 10 mW/MHz (typ)  Standby: 36 µW (max) • On-chip latches: address, data, CE, OE, WE • Automatic byte write: 15 ms (max) • Automatic page write (64 bytes): 15 ms (max) • Ready/Busy • Data polling and Toggle bit • Data protection circuit on power on/off • Conforms to JEDEC byte-wide standard • Reliable CMOS with MNOS cell technology • 105 erase/write cycles (in page mode) • 10 years data retention • Software data protection • Industrial versions (Temperature range: – 40 to + 85˚C) are also available. Preliminary: This document contains information on a new product. Specifications and information contained herein are subject to change without notice. HN58S65A Series Ordering Information Type No. HN58S65AT-15 Access time 150 ns Package 28-pin plastic TSOP(TFP-28DB) Pin Arrangement HN58S65AT Series A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17 18 19 20 21 22 23 24 25 26 27 28 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A3 A4 A5 A6 A7 A12 RDY/Busy VCC WE NC A8 A9 A11 OE (Top view) Pin Description Pin name A0 to A12 I/O0 to I/O7 OE CE WE VCC VSS RDY/Busy NC Function Address input Data input/output Output enable Chip enable Write enable Power supply Ground Ready busy No connection HN58S65A Series Block Diagram I/O0 High voltage generator to VCC VSS I/O7 RDY/Busy OE CE WE Control logic and timing I/O buffer and input latch A0 to Y decoder Y gating A5 Address buffer and latch A6 to X decoder Memory array A12 Data latch Operation Table Operation Read Standby Write Deselect Write Inhibit CE VIL VIH VIL VIL × × Data Polling Notes: 1. × : Don’t care VIL OE VIL ×* 1 WE VIH × VIL VIH VIH × VIH RDY/Busy High-Z High-Z High-Z to V OL High-Z — — VOL I/O Dout High-Z Din High-Z — — Dout (I/O7) VIH VIH × VIL VIL HN58S65A Series Absolute Maximum Ratings Parameter Power supply voltage relative to V SS Input voltage relative to V SS Operating temperature range * Storage temperature range 2 Symbol VCC Vin Topr Tstg Value –0.6 to +7.0 –0.5* to +7.0* 0 to +70 –55 to +125 1 3 Unit V V ˚C ˚C Notes: 1. Vin min : –3.0 V for pulse width ≤ 50 ns. 2. Including electrical characteristics and data retention. 3. Should not exceed VCC + 1.0 V. Recommended DC Operating Conditions Parameter Supply voltage Symbol VCC VSS Input voltage VIL VIH Operating temperature Topr Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns. 2. VIH max: V CC + 1.0 V for pulse width ≤ 50 ns. Min 2.2 0 –0.3* 1 Typ 3.0 0 — — — Max 3.6 0 0.4 VCC + 0.3* 70 2 Unit V V V V ˚C VCC × 0.7 0 DC Characteristics (Ta = 0 to + 70˚C, VCC = 2.2 to 3.6 V) Parameter Input leakage current Output leakage current Standby V CC current Symbol I LI I LO I CC1 I CC2 Operating VCC current I CC3 Min — — — — — — Output low voltage Output high voltage VOL VOH — Typ — — 1 to 2 — — — — Max 2 2 3.5 500 6 12 0.4 — Unit µA µA µA µA mA mA V V Test conditions VCC = 5.5 V, Vin = 5.5 V VCC = 5.5 V, Vout = 5.5/0.4 V CE = VCC CE = VIH Iout = 0 mA, Duty = 100%, Cycle = 1 µs at VCC = 3.6 V Iout = 0 mA, Duty = 100%, Cycle = 150 ns at VCC = 3.6 V I OL = 1.0 mA I OH = –100 µA VCC × 0.8 — HN58S65A Series Capacitance (Ta = 25˚C, f = 1 MHz) Parameter Input capacitance Output capacitance Note: Symbol Cin* 1 1 Min — — Typ — — Max 6 12 Unit pF pF Test conditions Vin = 0 V Vout = 0 V Cout* 1. This parameter is sampled and not 100% tested. AC Characteristics (Ta = 0 to + 70˚C, VCC = 2.2 to 3.6 V) Test Conditions • • • • • Input pulse levels : 0.4 V to 2.4 V (VCC = 2.7 to 3.6 V), 0.4 V to 1.9 V (VCC = 2.2 to 2.7 V) Input rise and fall time : ≤ 5 ns Input timing reference levels : 0.8, 1.8 V Output load : 1TTL Gate +100 pF Output reference levels : 1.5 V, 1.5 V (VCC = 2.7 to 3.6 V) 1.1 V, 1.1 V (VCC = 2.2 to 2.7 V) Read Cycle HN58S65A -15 Parameter Address to output delay CE to output delay OE to output delay Address to output hold OE (CE) high to output float* 1 Symbol t ACC t CE t OE t OH t DF Min — — 10 0 0 Max 150 150 80 — 80 Unit ns ns ns ns ns Test conditions CE = OE = VIL, WE = VIH OE = VIL, WE = VIH CE = VIL, WE = VIH CE = OE = VIL, WE = VIH CE = VIL, WE = VIH HN58S65A Series Write Cycle Min*2 0 150 0 0 0 0 0 0 150 0 200 200 200 0.4 100 — 120 0* 4 Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled) WE to write setup time (CE controlled) WE hold time (CE controlled) OE to write setup time OE hold time Data setup time Data hold time WE pulse width (WE controlled) CE pulse width (CE controlled) Data latch time Byte load cycle Byte load window Write cycle time Time to device busy Write start time Symbol t AS t AH t CS t CH t WS t WH t OES t OEH t DS t DH t WP t CW t DL t BLC t BL t WC t DB t DW Typ — — — — — — — — — — — — — — — — — — Max — — — — — — — — — — — — — 30 — 15* — — 3 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns µs µs ms ns ns Test conditions Notes: 1. t DF is defined as the time at which the outputs achieve the open circuit conditions and are no longer driven. 2. Use this device in longer cycle than this value. 3. t WC must be longer than this value unless polling techniques or RDY/Busy are used. This device automatically completes the internal write operation within this value. 4. Next read or write operation can be initiated after tDW if polling techniques or RDY/Busy are used. 5. A6 through A12 are page addresses and these addresses are latched at the first falling edge of WE. 6. A6 through A12 are page addresses and these addresses are latched at the first falling edge of CE . 7. See AC read characteristics. HN58S65A Series Timing Waveforms Read Timing Waveform Address tACC CE tCE OE tOE WE High tDF tOH Data Out Data out valid HN58S65A Series Byte Write Timing Waveform(1) (WE Controlled) tWC Address tCS CE tAS WE tOES OE tDS Din tDW RDY/Busy High-Z tDB High-Z tDH tOEH tBL tAH tCH tWP HN58S65A Series Byte Write Timing Waveform(2) (CE Controlled) Address tWS CE tAS WE tOES OE tDS Din tDW High-Z tDB High-Z tDH tOEH tAH tCW tWH tBL tWC RDY/Busy HN58S65A Series Page Write Timing Waveform(1) (WE Controlled) *5 Address A0 to A12 tAS WE tCS CE tOES OE tAH tWP tDL tCH tBLC tBL tWC tOEH tDH tDS Din tDB tDW High-Z RDY/Busy High-Z HN58S65A Series Page Write Timing Waveform(2) (CE Controlled) *6 Address A0 to A12 CE tAS tAH tCW tDL tBLC tBL tWS WE tWH tWC tOEH tOES OE tDH tDS Din tDB tDW High-Z RDY/Busy High-Z Data Polling Timing Waveform Address An An An CE WE tOEH tCE *7 tOES OE tOE*7 I/O7 Din X Dout X Dout X tWC tDW HN58S65A Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program. Toggle Bit Waveform Notes: 1. 2. 3. 4. I/O6 beginning state is “1”. I/O6 ending state will vary. See AC read characteristics. Any address location can be used, but the address must be fixed. Next mode *4 Address tCE *3 CE WE tOE OE tOEH *1 *2 *2 *3 tOES I/O6 Din Dout Dout tWC Dout Dout tDW HN58S65A Series Software Data Protection Timing Waveform(1) (in protection mode) VCC CE WE tBLC Address Data 1555 AA 0AAA 55 1555 A0 Write address Write data tWC Software Data Protection Timing Waveform(2) (in non-protection mode) VCC tWC Normal active mode CE WE Address Data 1555 0AAA 1555 1555 0AAA 1555 AA 55 80 AA 55 20 HN58S65A Series Functional Description Automatic Page Write Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each additional byte load cycle must be started within 30 µs from the preceding falling edge of WE or CE. When CE or W E is kept high for 100 µs after data input, the EEPROM enters write mode automatically and the input data are written into the EEPROM. Data Polling Data polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/B usy signal also allows status of the EEPROM to be determined. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the end of a write cycle, the RDY/Busy signal changes state to high impedance. WE , CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or C E, and data is latched by the rising edge of WE or CE. Write/Erase Endurance and Data Retention Time The endurance is 10 5 cycles in case of the page programming and 104 cycles in case of the byte programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 104 cycles. HN58S65A Series Data Protection 1. Data Protection against Noise on Control Pins (CE, OE, WE ) during Operation During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15 ns or less. Be careful not to allow noise of a width of more than 15 ns on the control pins. WE CE VIH 0V OE VIH 0V 15 ns max 2. Data protection at VCC on/off When V CC is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state while the CPU is in an unstable state. Note: The EEPROM should be kept in unprogrammable state during V CC on/off by using CPU RESET signal. VCC CPU RESET * Unprogrammable * Unprogrammable HN58S65A Series (1) Protection by CE, OE, WE To realize the unprogrammable state, the input level of control pins must be held as shown in the table below. CE OE WE ×: Don’t care. VCC: Pull-up to VCC level. VSS : Pull-down to V SS level. VCC × × × VSS × × × VCC 3. Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function. In software data protection mode, 3 bytes of data must be input before write data as follows. And these bytes can switch the non-protection mode to the protection mode. SDP is enabled if onry the 3 byte code is input. Address Data 1555 AA ↓ ↓ 0AAA 55 ↓ ↓ 1555 A0 ↓ ↓ Write address Write data } Normal data input Software data protection mode can be canceled by inputting the following 6 bytes. After that, this device turns to the non-protection mode and can write data normally. But when the data is input in the canceling cycle, the data cannot be written. Address 1555 ↓ 0AAA ↓ 1555 ↓ 1555 ↓ 0AAA ↓ 1555 Data AA ↓ 55 ↓ 80 ↓ AA ↓ 55 ↓ 20 The software data protection is not enabled at the shipment. Note: There are some differences between Hitachi’s and other company’s for enable/disable sequence of software data protection. If there are any questions , please contact with Hitachi sales offices. HN58S65A Series Package Dimensions HN58S65AT Series (TFP-28DB) Unit: mm 8.00 8.20 Max 28 15 1 14 0.55 0.22 ± 0.08 0.10 M 0.20 ± 0.06 0.45 Max 11.80 13.40 ± 0.30 0.80 0° – 5° 0.50 ± 0.10 0.17 ± 0.05 0.15 ± 0.04 1.20 Max 0.10 0.13 –0.08 +0.07 Dimension including the plating thickness Base material dimension Hitachi Code JEDEC Code EIAJ Code Weight (reference value) TFP-28DB — — 0.23 g HN58S65A Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071