174MS8E

HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Typical Applications The HMC174MS8 / HMC174MS8E is ideal for: • ISM Applications • PCMCIA Wireless Cards • Portable Wireless Features Ultra Small Package: MSOP8 High Third Order Intercept: +60 dBm Single Positive Supply: +3 to +10V High RF power Capabilty Functional Diagram General Description The HMC174MS8 & HMC174MS8E are low-cost SPDT switches in 8-lead MSOP packages for use in transmit-receive applications which require very low distortion at high signal power levels. The device can control signals from DC to 3.0 GHz and is especially suited for 900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM applications with only 0.5 dB loss. The design provides exceptional intermodulation performance; providing a +60 dBm third order intercept at 8 Volt bias. RF1 and RF2 are reflective shorts when “OFF”. Onchip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. 14 SWITCHES - SMT Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 0/8V Control 0/8V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz 0.5 - 1.0 GHz 0.5 - 3.0 GHz DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 10 24 ns ns 22 20 17 13 20 16 13 9 35 34 55 55 Min. Typ. 0.5 0.5 0.7 1.4 25 24 21 17 28 21 17 11 39 38 60 60 Max. 0.7 0.8 1.0 1.8 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics 14 - 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 0 1 2 3 FREQUENCY (GHz) Isolation 0 -10 ISOLATION (dB) -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Return Loss 0 INPUT RETURN LOSS (dB) 14 SWITCHES - SMT 10 12 -10 -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Input 0.1 and 1.0 dB Compression vs. Bias Voltage 45 1dB at 900MHz COMPRESSION (dBm) 1db at 1900MHz 40 Input Third Order Intercept vs. Bias Voltage 65 60 900MHz IP3 (dBm) 55 50 45 40 35 1900MHz 35 0.1dB at 900MHz 30 0.1dB at 1900MHz 25 2 4 6 8 BIAS (Volts) 10 12 2 4 6 8 BIAS (Volts) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 9 HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Compression vs. Bias Voltages Carrier at 900 MHz Bias Vdd (Volts) 3 4 5 8 10 Input Power for 0.1 dB Compression (dBm) 27 30 32 36 37 Input Power for 1.0 dB Compression (dBm) 31 34 36 39 40 Carrier at 1900 MHz Input Power for 0.1 dB Compression (dBm) 26 29 31 35 36 Input Power for 1.0 dB Compression (dBm) 30 33 35 38 39 Caution: Do not operate in 1dB compression at power levels above +35dBm and do not ‘hot switch’ power levels greater than +23dBm (Vdd = +5Vdc). 14 SWITCHES - SMT Distortion vs. Bias Voltage 1 Watt Carrier at 900 MHz Bias Vdd (Volts) 3 4 5 8 10 Third Order Intercept (dBm) 43 48 53 60 60 Second Order Intercept (dBm) 71 85 90 90 90 Second Harmonic (dBc) 45 55 56 58 59 1 Watt Carrier at 1900 MHz Third Order Intercept (dBm) 42 46 51 60 60 Second Order Intercept (dBm) 78 88 87 90 90 Second Harmonic (dBc) 55 65 58 59 60 Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc Bias Vdd (Vdc) 3 3 3 5 5 5 10 10 10 5 5 Control Input* A (Vdc) 0 0 Vdd 0 0 Vdd 0 0 Vdd -Vdd Vdd B (Vdc) 0 Vdd 0 0 Vdd 0 0 Vdd 0 Vdd -Vdd Bias Current Idd (uA) 30 25 25 110 115 115 380 495 495 600 600 Control Current Ia (uA) -15 -25 0 -55 -100 -15 -190 -275 -220 -600 225 Control Current Ib (uA) -15 0 -25 -55 -15 -100 -190 -220 -275 225 -600 Signal Path State RF to RF1 OFF ON OFF OFF ON OFF OFF ON OFF ON OFF RF to RF2 OFF OFF ON OFF OFF ON OFF OFF ON OFF ON 14 - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Absolute Maximum Ratings Bias Voltage Range (Vdd) Control Voltage Range (A & B) Storage Temperature Operating Temperature ESD Sensitivity (HBM) -0.2 to +12 Vdc -0.2 to +Vdd Vdc -65 to +150 °C -40 to +85 °C Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 14 SWITCHES - SMT Package Marking [3] H174 XXXX H174 XXXX NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC174MS8 HMC174MS8E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 11 HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Typical Application Circuit 14 SWITCHES - SMT Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 14 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Evaluation Circuit Board 14 SWITCHES - SMT List of Materials for Evaluation PCB 104124 [1] Item J1 - J3 J4 - J7 C1 - C3 C4 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 pF capacitor, 0402 Pkg. 10,000 pF capacitor, 0603 Pkg. HMC174MS8 / HMC174MS8E T/R Switch 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 13