221E

HMC221 / 221E v02.0700 Typical Applications • ISM Applications The HMC221 & HMC221E is ideal for: • PCMCIA Wireless Cards • Cellular Applications Functional Diagram ED U IN NT T O SC DUC DI RO P Features RoHS-Compliant Product Low Insertion Loss: 0.4 dB Ultra Small Package: SOT26 Input IP3: +45 dBm Positive Control: 0/+3V @ 10 uA Included in the HMC-DK005 Designer’s Kits GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz w r Ne o ed f Description General d men HMC221 and HMC221E are low-cost SPDT The om switches in a 6-lead SOT26 plastic package for Rec Not use in general switching applications which require very low insertion loss and very small size. These devices can control signals from DC to 3 GHz and is especially suited for 900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM applications with less than 1 dB loss. The design provides exceptional insertion loss performance, ideal for filter and receiver switching. RF1 and RF2 are reflective shorts when “Off”. The two control voltages require a minimal amount of DC current and offer compatibility with most CMOS & TTL logic families. See HMC197 for same performance in an alternate SOT26 pin-out. The HMC221E is a RoHScompliant product. s sign De 14 SWITCHES - SPDT - SMT Electrical Specifi cations, TA = +25° C, Vctl = 0/+3 to +8 Vdc Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 0.5 - 1.0 GHz 0.5 - 3.0 GHz 0.5 - 1.0 GHz 0.5 - 3.0 GHz DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 3 10 ns ns 24 24 21 14 20 17 16 11 25 23 40 38 Min. Typ. 0.4 0.45 0.6 0.8 28 28 25 18 23 22 20 15 30 29 45 43 Max. 0.7 0.8 0.9 1.1 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1 dB Compression (Vctl = 0/+5V) Input Third Order Intercept (Vctl = 0/+5V) (Two-tone Input Power = +7 dBm Each Tone) Switching Characteristics 14 - 1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC221 / 221E v02.0700 Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 0 0.5 ED U IN NT T O SC DUC DI RO P Isolation 0 -10 ISOLATION (dB) -20 -30 1 1.5 FREQUENCY (GHz) GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Return Loss 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 -35 0 0.5 1 1.5 w r Ne o ed f d men om Rec Input 0.1 and 1.0 dB Not Compression vs. Control Voltage -40 -50 2 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) 35 INPUT POWER FOR 0.1 AND 1 dB COMPRESSION (dBm) 1 dB at 1900 MHz 1 dB at 900 MHz 30 s sign De 2.5 3 14 0.1 dB at 900 MHz 25 20 0.1 dB at 1900 MHz 15 2 2.5 3 3 4 5 6 7 8 9 FREQUENCY (GHz) CONTROL INPUT (Vdc) Input Third Order Intercept Point vs. Control Voltage 48 Distortion vs. Control Voltage Control Input (Vdc) Third Order Intercept (dBm) +7 dBm Each Tone 900 MHz 41 45 46 1900 MHz 39 43 44 INPUT THIRD ORDER INTERCEPT(dBm) 46 +3 +5 44 +8 42 900 MHz 1900 MHz Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* A (Vdc) 0 2 3 4 5 6 7 8 9 40 Control Current Ia (uA) -10 10 -55 55 -210 210 -280 280 Ib (uA) 10 -10 55 -55 210 -210 280 -280 Signal Path RF to RF1 ON OFF ON OFF ON OFF ON OFF RF to RF2 OFF ON OFF ON OFF ON OFF ON B (Vdc) +3 0 +5 0 +7 0 +8 0 38 CONTROL INPUT (Vdc) +3 0 +5 0 +7 0 +8 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 14 - 2 SWITCHES - SPDT - SMT HMC221 / 221E v02.0700 Compression vs. Control Voltage Carrier at 900 MHz Control Input (Vdc) +3 +5 Input Power for 0.1 dB Compression (dBm) 17 Input Power for 1.0 dB Compression (dBm) 20 Input Power for 0.1 dB Compression (dBm) 17 w r Ne o Caution: Do not operate in 1dB compression at power levels above ed f +31 dBm (Vctl = +5 Vdc) and do not “hot switch” power levels d greater than +20 dBm (Vctl = +5Vdc). DC blocks are required at n me ports RFC, RF1 and RF2. om Rec Not +8 31 33 30 32 ED U IN NT T O SC DUC DI RO P Absolute Maximum Ratings Control Voltage Range (A & B) Storage Temperature Carrier at 1900 MHz -0.2 to +12 Vdc Input Power for 1.0 dB Compression (dBm) 20 -65 to +150 °C -40 to +85 °C Class 1A Operating Temperature ESD Sensitivity (HBM) 25 30 24 29 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS s sign De 14 SWITCHES - SPDT - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC221 HMC221E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking H221 221E [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C 14 - 3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC221 / 221E v02.0700 Typical Application Circuit Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS logic gates. w r Ne o 4. Highest RF signal power capability is achieved with Vdd = +8V ed f and A/B set to 0/+8V. d men om Rec Not 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. ED U IN NT T O SC DUC DI RO P s sign De GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Evaluation Circuit Board 14 SWITCHES - SPDT - SMT List of Materials for Evaluation PCB 101675 [1] Item J1 - J3 J4 - J7 C1 - C3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 330 pF capacitor, 0402 Pkg. HMC221 / HMC221E SPDT Switch 101659 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 Ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 14 - 4