311SC70E

HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features P1dB Output Power: +15 dBm Output IP3: +30 dBm Gain: 15 dB Cascadable, 50 Ohm I/O’s Single Supply: +5V Industry Standard SC70 Package 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC311SC70(E) is ideal for: • Cellular / PCS / 3G • WiBro / WiMAX / 4G • Fixed Wireless & WLAN • CATV & Cable Modem • Microwave Radio & Test Equipment Functional Diagram General Description The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz 6.0 - 8.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz 6.0 - 8.0 GHz DC - 8.0 GHz DC - 8.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 6.0 - 8.0 GHz DC - 2.0 GHz 2.0 - 6.0 GHz 6.0 - 8.0 GHz DC - 8.0 GHz 13.5 12.0 10.0 8.0 Min. 14.0 13.0 12.5 11.0 Typ. 15.0 15.0 14.5 13.0 0.004 0.007 0.012 0.018 15 18 15.5 15.0 13.0 11.0 30 27 24 5 55 74 0.007 0.012 0.016 0.022 Max. Units dB dB dB dB dB/ °C dB/ °C dB/ °C dB dB dBm dBm dBm dBm dBm dBm dBm dB mA Gain Gain Variation Over Temperature Return Loss Input / Output Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 9 - 14 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) Gain vs. Temperature 20 18 16 GAIN (dB) 14 12 10 8 6 4 +25C -40C +85C 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 15 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) S21 S11 S22 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 RETURN LOSS (dB) -5 +25C +85C -40C +25C +85C -40C -10 -15 -20 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -30 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) Noise Figure vs. Temperature 10 9 -5 NOISE FIGURE (dB) +25C +85C -40C 8 7 6 5 4 3 2 1 +25C +85C -40C -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT P1dB vs. Temperature 18 16 14 P1dB (dBm) 12 10 8 6 4 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 18 16 14 Psat (dBm) 12 10 8 6 4 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 1 GHz 18 Pout (dBm), GAIN (dB), PAE (%) 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Pout Gain PAE Power Compression @ 6 GHz 18 Pout (dBm), GAIN (dB), PAE (%) 16 14 12 10 8 6 4 2 0 -2 4 6 -4 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout Gain PAE 2 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 34 32 30 28 26 IP3 (dBm) 24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +85C -40C Gain, Power, IP3 & Supply Current vs. Supply Voltage @ 1 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 35 30 25 Icq (mA) 20 15 10 5 0 4.5 4.75 5 Vs (Vdc) 5.25 Icq Gain P1dB Psat IP3 80 60 40 20 0 5.5 9 - 16 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vcc = +3.9V) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 5.21 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +7V +10 dBm 150 °C 0.34 W 191 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 17 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC311SC70 HMC311SC70E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking 311 311 [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number Function Description Interface Schematic 1, 2, 4, 5 GND These pins must be connected to RF/DC ground. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 6 RFOUT RF output and DC Bias for the output stage. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.8 Rbias Recommended Component Values Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 22 nH 100 pF 2200 22 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5200 3.3 nH 100 pF 5800 3.3 nH 100 pF 9 - 18 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 19 List of Materials for Evaluation PCB 118040 [1] Item J1 - J2 J3 - J4 C1 - C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum 22 Ohm Resistor, 1210 Pkg. 22 nH Inductor, 0603 Pkg. HMC311SC70 / HMC311SC70E 117360 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com