327MS8GE

HMC327MS8G / 327MS8GE v06.1209 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications The HMC327MS8G(E) is ideal for: • Wireless Local Loop • WiMAX & Fixed Wireless • Access Points Features High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 11 LINEAR & POWER AMPLIFIERS - SMT • Subscriber Equipment Functional Diagram General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifi cations, TA = +25 °C, Vs = 5V, Vctl = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed *See Application Circuit for proper biasing configuration. Vctl* = 0V/5V Vctl* = 5V tON, tOFF 36 24 17 Min. Typ. 3-4 21 0.025 15 8 27 30 40 5 0.002 / 250 7 40 24 0.035 Max. Units GHz dB dB / °C dB dB dBm dBm dBm dB mA mA ns 11 - 2 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Broadband Gain & Return Loss 25 Gain vs. Temperature 24 20 15 RESPONSE (dB) 5 GAIN (dB) S21 S11 S22 16 +25 C +85 C -40 C 12 -5 8 -15 11 4 4.5 4 -25 2 2.5 3 3.5 4 4.5 5 0 2.5 3 3.5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2.5 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -3 -6 -9 -12 -15 3 3.5 FREQUENCY (GHz) 4 4.5 2.5 3 3.5 4 4.5 FREQUENCY (GHz) P1dB vs. Temperature 34 Psat vs. Temperature 34 30 30 P1dB (dBm) 26 Psat (dBm) 26 +25 C +85 C -40 C 22 +25 C +85 C -40 C 22 18 18 14 2.5 3 3.5 4 4.5 14 2.5 3 3.5 4 4.5 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 3 LINEAR & POWER AMPLIFIERS - SMT RETURN LOSS (dB) HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Power Compression @ 3.5 GHz 48 Output IP3 vs. Temperature 44 39 34 IP3 (dBm) 29 24 19 14 2.5 +25 C +85 C -40 C Pout (dBm), GAIN (dB), PAE (%) 40 Pout Gain PAE 32 24 11 LINEAR & POWER AMPLIFIERS - SMT 16 8 0 -5 -1 3 7 11 15 3 3.5 FREQUENCY (GHz) 4 4.5 INPUT POWER (dBm) Noise Figure vs. Temperature 10 +25 C +85 C -40 C Gain & Power vs. Supply Voltage 28 32 8 NOISE FIGURE (dB) 26 30 P1dB (dBm) & Psat (dBm) GAIN (dB) 6 24 28 4 22 26 2 20 Gain P1dB Psat 24 0 3 3.5 4 4.5 18 4.75 5 Vcc SUPPLY VOLTAGE (V) FREQUENCY (GHz) 22 5.25 Reverse Isolation vs. Temperature 0 -10 Power Down Isolation 0 ISOLATION (dB) -20 -30 ISOLATION (dB) 4 4.5 +25 C +85 C -40 C -10 -20 -40 -30 -50 -60 2.5 3 3.5 -40 2.5 3 3.5 4 4.5 FREQUENCY (GHz) FREQUENCY (GHz) 11 - 4 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz 30 250 Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) +5.5V +5.5V +16 dBm 150 °C 1.88 W 34 °C/W -65 to +150 °C GAIN (dB), P1dB (dBm), Psat (dBm) 25 200 RF Input Power (RFIN)(Vs = Vctl = +5V) Junction Temperature Icq (mA) 20 Icq 150 Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) 15 P1dB Psat Gain 100 10 50 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 5 Storage Temperature Operating Temperature 5 2.5 3 3.5 4 4.5 5 0 -40 to +85 °C Vctl (V) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC327MS8G HMC327MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H327 XXXX H327 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vpd 11 LINEAR & POWER AMPLIFIERS - SMT 2, 4, 7 GND 3 RFIN Power Control Pin. For proper control bias, this pin should be connected to 5V through a series resistor of 130 Ohms. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. Ground: Backside of package has exposed metal ground paddle that must be connected to ground thru a short path. Vias under the device are required. This pin is AC coupled and matched to 50 Ohms. 5, 6 RFOUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the device as possible. Application Circuit TL1 Impedance Length 50 Ohm 0.038” TL2 50 Ohm 0.231” TL3 50 Ohm 0.1” Note: C3 should be located