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332E

332E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    332E - GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
332E 数据手册
HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Typical Applications The HMC332 / HMC332E is ideal for: • MMDS Features Integrated LO Amplifier w/ Pdiss: < 20 mW Conversion Loss / Noise Figure: 8.0 dB Low LO Drive Level: 0 dBm Input IP3: +10 dBm Single Positive Supply: 3V to 5V 7 MIXERS - SMT • PCMCIA • WirelessLAN • WCDMA micro-BTS Functional Diagram General Description The HMC332 & HMC332E are single balanced mixer ICs with integrated LO amplifiers. This converter IC can operate as an upconverter or downconverter between 2.0 GHz and 2.8 GHz. With the integrated LO amplifier, the mixer requires an LO drive level of only 0 dBm, and requires only 6 mA from a single positive +3V rail. The mixer has 8 dB of conversion loss, an input P1dB of 0 dBm, and an input third order intercept point of +10 dBm. Electrical Specifications, TA = +25° C Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) 1 dB Compression (Input) Supply Current (Idd) * Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz. 11 2 11 4 -4 IF = 100 MHz LO = 0 dBm & Vdd = +3V Typ. 2.0 - 2.8 DC - 1.0 8 8 20 5 17 10 0 6 10 10 Max. GHz GHz dB dB dB dB dB dBm dBm mA Units 7 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Conversion Gain vs. Temperature @ LO = 0 dBm 0 Isolation @ LO = 0 dBm 0 -5 CONVERSION GAIN (dB) -5 ISOLATION (dB) -10 -15 -20 -25 -30 1.4 RF/IF LO/RF LO/IF 7 MIXERS - SMT 7 - 197 -10 -15 +25 C -40 C +85 C -20 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 FREQUENCY (GHz) FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 -6 dBm -4 dBm -2 dBm 0 dBm +2 dBm +4 dBm Return Loss @ LO = 0 dBm 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 RF LO CONVERSION GAIN (dB) -5 -10 -15 -20 1.4 -30 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Conversion Gain vs. Vdd @ LO = 0 dBm 0 IF Bandwidth @ LO = 0 dBm 0 CONVERSION GAIN (dB) -5 RESPONSE (dB) -5 -10 -10 -15 +2.7V +3.0V +3.3V -15 CONVERSION GAIN RETURN LOSS -20 1.4 -20 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 0 0.3 0.5 0.8 1 1.3 1.5 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Input P1dB vs. Temperature @ LO = 0 dBm 10 8 Upconverter Performance Conversion Gain @ LO = 0 dBm 0 CONVERSION GAIN (dB) 6 -5 INPUT P1dB (dBm) 4 2 0 -2 -4 -6 -8 -20 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 -10 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 +25 C -40 C +85 C 7 MIXERS - SMT -10 -15 FREQUENCY (GHz) FREQUENCY (GHz) Input IP3 vs. LO Drive* 20 Input IP3 vs. Temperature @ LO = 0 dBm* 20 15 INPUT IP3 (dBm) INPUT IP3 (dBm) 15 10 10 5 -2 dBm 0 dBm +2 dBm 5 +25 C -40 C +85 C 0 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 0 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 FREQUENCY (GHz) FREQUENCY (GHz) Input IP3 vs. Vdd @ LO = 0 dBm* 20 Input P1dB vs. Vdd @ LO = 0 dBm 10 8 6 15 INPUT P1dB (dBm) INPUT IP3 (dBm) 4 2 0 -2 -4 -6 -8 0 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 -10 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 +2.7V +3.0V +3.3V 10 5 +2.7V +3.0V +3.3V FREQUENCY (GHz) FREQUENCY (GHz) * Two-tone input power= -10 dBm each tone, 1 MHz spacing. 7 - 198 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz MxN Spurious @ IF Port nLO mRF 0 1 2 3 4 0 xx 12 41 >74 >74 1 -11 0 35 64 >74 2 8 31 39 >74 >74 3 8 34 32 50 71 4 43 48 45 67 67 Harmonics of LO nLO Spur @ RF Port LO Freq. (GHz) 2 2.2 2.4 2.6 2.8 3 1 24 20 20 19 14 11 2 6 7 9 13 18 15 3 19 18 22 18 21 24 4 32 44 43 40 7 MIXERS - SMT 7 - 199 38 39 RF = 2.5 GHz @ -10 dBm LO = 2.4 GHz @ 0 dBm All values in dBc below IF power level. LO = 0 dBm All values in dBc below input LO level @ RF port. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +3V) LO Drive (Vdd = +3V) +13 dBm +13 dBm 5.5V 238 mW ±3 mA -65 to +150 °C -40 to +85 °C 7 MIXERS - SMT Vdd Continuous Pdiss (Ta = 85 °C) (derate 2.64 mW/°C above 85 °C) IF DC Current Storage Temperature Operating Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC332 HMC332E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H332 XXXX 332E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7 - 200 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vdd Power supply for the LO Amplifier. Two external RF bypass capacitors (10 pF & 10,000 pF) and an external inductor 4.7 nH) are required. 7 MIXERS - SMT 7 - 201 2, 5 GND Ground: Pin must connect to RF ground. This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value have been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/ sink more than 3mA of current or die non-function and possible die failure will result. 3 IF 4 RF This pin is AC coupled and matched to 50 Ohm from 2.0 - 2.8 GHz. 6 LO This pin is AC coupled and matched to 50 Ohm from 2.0 - 2.8 GHz. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Application Circuit 7 MIXERS - SMT 7 - 202 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC332 / 332E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Evaluation PCB 7 MIXERS - SMT List of Materials for Evaluation PCB 105099 [1] Item J1 - J4 C1 C2 L1 U1 PCB [2] Description PCB Mount SMA RF Connector 10 pF Capacitor, 0603 Pkg. .01 μF Capacitor, 0603 Pkg. 4.7 nH Inductor, 0805 Pkg. HMC332 / HMC332E Mixer 103927 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 203
332E
物料型号: - HMC332/332E GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz

器件简介: - HMC332和HMC332E是带有集成本振放大器的单平衡混频器IC。这款转换器IC可以在2.0 GHz至2.8 GHz之间作为上变频器或下变频器工作。集成的本振放大器使得混频器仅需要0 dBm的LO驱动电平,并且仅需要从单正+3V电源轨吸取6 mA电流。混频器具有8 dB的转换损耗,输入P1dB为0 dBm,输入三阶截取点为+10 dBm。

引脚分配: - 1号引脚:Vdd,LO放大器的电源供应。需要两个外部RF旁路电容器(10 pF和10,000 pF)和一个外部电感(4.7 nH)。 - 2、5号引脚:GND,地线,必须连接到RF地。 - 3号引脚:IF,这个引脚是直流耦合的。对于不需要操作到直流的应用,应使用外部串联电容器进行直流阻断。 - 4号引脚:RF,这个引脚是交流耦合的,并且在2.0-2.8 GHz范围内匹配到50欧姆。 - 6号引脚:LO,这个引脚是交流耦合的,并且在2.0-2.8 GHz范围内匹配到50欧姆。

参数特性: - 频率范围:RF和LO为2.0-2.8 GHz,IF为直流至1.0 GHz。 - 转换损耗为8-10 dB,噪声系数(单边带)为8-10 dB。 - LO到RF隔离为11-20 dB,LO到IF隔离为2-5 dB,RF到IF隔离为11-17 dB。 - 输入三阶截取点(IP3)为+10 dBm,输入1 dB压缩点为-4至0 dBm。 - 供电电流(Idd)为6 mA。

功能详解: - HMC332/332E适用于MMDS、PCMCIA、无线局域网、WCDMA微基站等应用场景。它们是工作在2.0-2.8 GHz频段的单平衡混频器IC,可以作为上变频器或下变频器使用。

应用信息: - 该PDF提供了评估PCB的物料清单,包括PCB安装的SMA射频连接器、电容器、电感器和HMC332/HMC332E混频器IC。

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