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358MS8GE

358MS8GE

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    358MS8GE - MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
358MS8GE 数据手册
HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Typical Applications Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: • UNII & Pt. to Pt. Radios • 802.11a & HiperLAN WLAN • VSAT Radios Features Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 100 mA 15mm2 MSOP8G SMT Package Functional Diagram General Description The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is 11 dBm typical from a 3.0V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance. 10 VCOS & PLOs - SMT Electrical Specifications, TA = +25° C, Vcc = +3V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) Supply Current (Icc) Tune Port Leakage Current (Vtune= 10V) Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +3V Frequency Drift Rate 9 -10 -20 10 150 0.8 0 100 10 8 Min. Typ. 5.8 - 6.8 11 -110 10 Max. Units GHz dBm dBc/Hz V mA μA dB dB dB MHz pp MHz/V MHz/°C 10 - 2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Frequency vs. Tuning Voltage, T= 25°C 7.2 OUTPUT FREQUENCY (GHz) 7 6.8 6.6 6.4 6.2 6 5.8 5.6 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Vcc= 2.75V Vcc= 3.0V Vcc= 3.25V Frequency vs. Tuning Voltage, Vcc= +3V 7.2 OUTPUT FREQUENCY (GHz) 7 6.8 6.6 6.4 6.2 6 5.8 5.6 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C 10 VCOS & PLOs - SMT 10 - 3 Sensitivity vs. Tuning Voltage, Vcc= +3V 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Output Power vs. Tuning Voltage, Vcc= +3V 20 18 SENSITIVITY (MHz/VOLT) OUTPUT POWER (dBm) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Phase Noise vs. Tuning Voltage -60 SSB PHASE NOISE (dBc/Hz) -70 -80 -90 10 kHz offset 100 kHz offset Typical SSB Phase Noise @ Vtune= +5V 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 3 10 SSB PHASE NOISE (dBc/Hz) +25 C +85 C -40 C -100 -110 -120 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 10 4 10 5 10 6 10 7 OFFSET FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Absolute Maximum Ratings Vcc Storage Temperature Operating Temperature Vtune ESD Sensitivity (HBM) 3.5 Vdc -65 to +150 °C -40 to +85 °C 0 to 11V Class 1A Typical Supply Current vs. Vcc Vcc (V) 2.75 3.0 3.25 Icc (mA) 80 100 115 Note: VCO will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 10 VCOS & PLOs - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC358MS8G HMC358MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H358 XXXX H358 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 10 - 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vcc Supply Voltage Vcc= 3V 2, 6, 7 N/C No Connection 3 VTUNE Control Voltage Input. Modulation port bandwidth dependent on drive source impedance. 10 VCOS & PLOs - SMT 10 - 5 4, 5 GND Package bottom has an exposed metal paddle that must be RF & DC grounded. 8 RFOUT RF output (AC coupled). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Evaluation PCB 10 VCOS & PLOs - SMT List of Materials for Evaluation PCB 104713 [1] Item J1 - J3 C1 U1 PCB [2] Description PCB Mount SMA RF Connector 10 μF Tantalum Capacitor HMC358MS8G / HMC358MS8GE VCO 104368 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and backside ground slug should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 10 - 6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Notes: 10 VCOS & PLOs - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 7
358MS8GE
物料型号: - HMC358MS8G / 358MS8GE

器件简介: - HMC358MS8G和HMC358MS8GE是基于砷化镓(GaAs)异质结双极晶体管(HBT)技术的单片微波集成电路(MMIC)压控振荡器(VCO)。这些VCO集成了谐振器、负阻抗器件、变容二极管和缓冲放大器。在温度、冲击和工艺变化下,由于振荡器的单片结构,其相位噪声性能表现出色。在3.0V电源电压下,功率输出典型值为11dBm。VCO采用低成本、表面贴装的8引脚MSOP封装,带有暴露的基底,以改善射频和热性能。

引脚分配: - 1 Vcc:供电电压 - 2, 6, 7 N/C:无连接 - 3 VTUNE:控制电压输入,调制端口带宽取决于驱动源阻抗 - 4, 5 GND:封装底部有一个暴露的金属托盘,必须射频和直流接地 - 8 RFOUT:射频输出(交流耦合)

参数特性: - 频率范围:5.8-6.8 GHz - 功率输出:8-11 dBm - 相位噪声:-110 dBc/Hz @100 kHz偏移 - 调谐电压:0-10 V - 供电电流:100 mA - 调谐端口漏电流:10 A - 输出回波损耗:9 dB - 谐波:2nd -10 dB,3rd -20 dB - 拉动(进入2.0:1 VSWR):10 MHz pp - 推动@Vtune= +3V:150 MHz/V - 频率漂移率:0.8 MHz/°C

功能详解: - HMC358MS8G/HMC358MS8GE是低噪声C波段应用的MMIC VCO,包括UNII & PtP无线电、802.11a & HiperLAN WLAN、VSAT无线电等。该VCO无需外部谐振器,单电源供电3V@100mA。

应用信息: - 用于C波段的低噪声MMIC VCO带缓冲放大器,例如UNII & PtP无线电、802.11a & HiperLAN WLAN、VSAT无线电等。

封装信息: - HMC358MS8G:低应力注塑成型塑料,Sn/Pb焊料,MSL1等级,标记为H358 XXXX - HMC358MS8GE:符合RoHS标准的低应力注塑成型塑料,100%亚光Sn,MSL1等级,标记为H358 xXXX
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