373LP3E

HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 5 AMPLIFIERS - SMT Typical Applications The HMC373LP3 / HMC373LP3E is ideal for basestation receivers: • GSM, GPRS & EDGE • CDMA & W-CDMA • Private Land Mobile Radio Features Noise Figure: 0.9 dB +35 dBm Output IP3 Gain: 14 dB Low Loss LNA Bypass Path Single Supply: +5.0 V @ 90 mA 50 Ohm Matched Output Functional Diagram General Description The HMC373LP3 / HMC373LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5.0V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 μA. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the low noise amplifier. Electrical Specifications, TA = +25° C, Vdd = +5V LNA Mode Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Power for 1dB Compression (P1dB)* Saturated Output Power (Psat) Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 18 11.5 Typ. 810 - 960 13.5 0.008 0.9 28 12 20 21 22.5 35.5 90 17 0.015 1.3 10.5 Max. Min. Typ. 700 - 1000 14 0.008 1.0 25 11 19 20 22 35 90 50 0.01 30 0.015 1.4 30 25 -2.8 Max. Min. Typ. 700 - 1000 -2.0 0.002 0.004 Max. MHz dB dB / °C dB dB dB dB dBm dBm dBm mA LNA Mode Bypass Mode Units * P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN. 5 - 104 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz LNA – Gain, Noise Figure & Power vs. Supply Voltage @ 850 MHz 22 21 GAIN (dB), P1dB (dBm) 20 19 18 17 16 15 14 13 12 0.5 0.75 1 1.25 1.5 1.75 2 4.5 4.75 5 Vdd (Vdc) 5.25 FREQUENCY (GHz) Gain P1dB Noise Figure LNA Broadband Gain & Return Loss 20 15 10 5 RESPONSE (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 0.25 S21 S11 S22 5 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 5.5 NOISE FIGURE (dB) LNA Gain vs. Temperature 20 19 18 17 GAIN (dB) 16 15 14 13 12 11 10 0.7 0.75 0.8 0.85 0.9 0.95 1 LNA Noise Figure vs. Temperature 1.5 1.4 NOISE FIGURE (dB) +25 C +85 C -40 C 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.7 0.75 0.8 0.85 +25 C +85 C -40 C 0.9 0.95 1 FREQUENCY (GHz) FREQUENCY (GHz) LNA Gain vs. Vdd 20 19 18 LNA Noise Figure vs. Vdd 1.5 1.4 1.3 NOISE FIGURE (dB) +4.5 V +5.0 V +5.5 V +4.5 V +5.0 V +5.5 V 17 GAIN (dB) 16 15 14 13 12 11 10 0.7 0.75 0.8 0.85 1.2 1.1 1 0.9 0.8 0.7 0.6 0.9 0.95 1 0.5 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 105 AMPLIFIERS - SMT HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 5 AMPLIFIERS - SMT LNA Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25 C +85 C -40 C LNA Output Return Loss vs. Temperature 0 -2 -4 RETURN LOSS (dB) +25 C -10 -15 -20 -25 -30 -35 -40 0.7 -6 -8 -10 -12 -14 -16 -18 +85 C -40 C 0.75 0.8 0.85 0.9 0.95 1 -20 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) FREQUENCY (GHz) LNA Output IP3 vs. Temperature 40 39 38 OUTPUT IP3 (dBm) 37 36 35 34 33 32 31 30 0.7 0.75 0.8 0.85 0.9 0.95 1 +25 C +85 C -40 C LNA P1dB & Psat vs. Temperature 25 COMPRESSION POINT (dBm) 24 Psat 23 22 21 20 19 18 17 16 15 0.7 0.75 0.8 0.85 0.9 0.95 1 +25 C +85 C -40 C P1dB FREQUENCY (GHz) FREQUENCY (GHz) LNA Output IP3 vs. Vdd 40 39 38 OUTPUT IP3 (dBm) 37 36 35 34 33 32 31 30 0.7 0.75 0.8 0.85 0.9 0.95 1 +4.5 V +5.0 V +5.5 V LNA P1dB vs. Vdd 25 24 23 22 P1dB (dBm) 21 20 19 18 17 16 15 0.7 0.75 0.8 0.85 0.9 0.95 1 +4.5 V +5.0 V +5.5 V FREQUENCY (GHz) FREQUENCY (GHz) 5 - 106 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Bypass Mode Broadband Insertion Loss & Return Loss 0 -5 RESPONSE (dB) +25 C LNA Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 0.7 5 AMPLIFIERS - SMT 5 - 107 -10 -15 -20 -25 -30 -35 -40 0.25 S21 S11 S22 +85 C -40 C 0.75 0.8 0.85 0.9 0.95 1 0.5 0.75 1 1.25 1.5 1.75 2 FREQUENCY (GHz) FREQUENCY (GHz) Bypass Mode Insertion Loss vs. Temperature 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 0.7 0.75 0.8 0.85 0.9 0.95 1 Bypass Mode Input Return Loss vs. Temperature 0 -5 -10 RETURN LOSS (dB) -15 -20 -25 -30 -35 -40 -45 -50 0.7 0.75 0.8 0.85 0.9 0.95 1 +25 C +85 C -40 C FREQUENCY (GHz) FREQUENCY (GHz) Bypass Mode Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 0.7 Bypass Mode Input IP3 vs. Temperature 55 INPUT IP3 (dBm) +25 C +85 C -40 C 50 45 40 +25 C +85 C -40 C 0.75 0.8 0.85 0.9 0.95 1 35 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 5 AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 13.5 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc LNA Mode +15 dBm Bypass Mode +30 dBm 150 °C 0.878 W 74.1 °C/W -65 to +150° C -40 to +85° C Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 87 90 93 Truth Table LNA Mode Bypass Mode Vctl= Short Circuit to DC Ground Vctl= Open Circuit ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC373LP3 HMC373LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 373 XXXX 373 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 - 108 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Pin Descriptions Pin Number 1, 3, 5, 8, 10, 12, 13, 15, 16 2 Function N/C Description No connection necessary. These pins may be connected to RF/DC ground. This pin is matched to 50 Ohms with a 19 nH inductor to ground. See Application Circuit. Interface Schematic 5 AMPLIFIERS - SMT 5 - 109 RFIN 4 Vctl DC ground return. LNA is in high gain mode when a short circuit is introduced to this pin through an external switch. LNA is in bypass mode when open circuit is introduced 6 ACG An external capacitor of 0.01μF to ground is required for low frequency bypassing. See Application Circuit for further details. 7, 14 GND These pins must be connected to RF/DC ground. 9 Vdd Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 107220 [1] Item J1 - J2 J3 - J4 J5 C1 C2 C3 L1 L2 R1 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 2 Pos DIP Switch 10000 pF Capacitor, 0402 Pkg. 10000 pF Capacitor, 0603 Pkg. 1000 pF Capacitor, 0402 Pkg. 19 nH Inductor, 0402 Pkg. 18 nH Inductor, 0603 Pkg. 2 Ohm Resistor, 0402 Pkg. HMC373LP3 / HMC373LP3E Amplifier 107177 Evaluation Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 5 - 110 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC373LP3 / 373LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Evaluation Board Circuit 5 AMPLIFIERS - SMT Application Circuit Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 μF ±10% capacitor is recommended. Note 2: Pin 4 (Vctl) is the DC ground return for the circuit. The LNA is in the high gain mode when a short circuit is introduced to this pin through an external switch. The LNA is in bypass mode when an open circuit is introduced. For the data presented, switching is done through a two position DIP switch (J5) in series with a 2 Ohm resistor (to account for the Ron of an electrical switch). Note 3: L1, L2 and C1 should be located as close to pins as possible. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 111