382LP3E

HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC382LP3 / HMC382LP3E is ideal for: • Cellular/3G Infrastructure • Base Stations & Repeaters • CDMA, W-CDMA, & TD-SCDMA • GSM/GPRS & EDGE Features Noise Figure: 1 dB Output IP3: +30 dBm Gain: 17 dB Externally Adjustable Supply Current Single Positive Supply: +5V 50 Ohm Matched Input/Output Functional Diagram General Description The HMC382LP3 & HMC382LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +30 dBm output IP3 from a single supply of +5V. The HMC382LP3 & HMC382LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC618LP3(E). Electrical Specifi cations, TA = +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms* Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd1 + Idd2) 14 Min. Typ. 1.7 - 1.9 17 0.01 1.0 13 10 37 16 0.015 1.3 12 Max. Min. Typ. 1.9 - 2.0 15 0.01 1.05 12 13 36 16 0.015 1.35 11 Max. Min. Typ. 2.0 - 2.1 14 0.01 1.15 11 12 35 15.5 0.015 1.45 9 Max. Min. Typ. 2.1 - 2.2 12 0.01 1.2 10 9 35 14 0.015 1.5 Max. Units GHz dB dB/°C dB dB dB dB dBm 29.5 67 30 67 30 67 29.5 67 dBm mA * Rbias resistor value sets current. See application circuit herein. 7-1 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 0.5 0.75 1 1.25 1.5 1.75 2 2.25 FREQUENCY (GHz) 2.5 2.75 3 Gain vs. Temperature 24 7 +25 C +85 C -40 C 20 GAIN (dB) S21 S11 S22 16 12 8 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) -5 +25 C +85 C -40 C -3 +25 C +85 C -40 C -6 -10 -9 -15 -12 -20 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -15 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Reverse Isolation vs. Temperature -15 -20 Noise Figure vs. Temperature 2 1.6 ISOLATION (dB) -25 -30 -35 -40 -45 -50 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C -40 C NOISE FIGURE (dB) 1.2 0.8 +25 C +85 C -40 C 0.4 0 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-2 AMPLIFIERS - LOW NOISE - SMT HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature @ Idd = 67 mA 20 Psat vs. Temperature @ Idd = 67 mA 20 18 P1dB (dBm) Psat (dBm) 18 16 16 +25 C +85 C -40 C 14 +25 C +85 C -40 C 14 12 12 10 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 10 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Output IP3 vs. Temperature Idd = @ 67 mA 34 32 30 IP3 (dBm) 28 26 24 22 20 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Gain, Noise Figure & P1dB vs. Supply Current @ 1900 MHz 24 22 GAIN (dB) & P1dB (dBm) 20 18 16 14 12 60 GAIN P1dB Noise Figure 1.4 1.2 NOISE FIGURE (dB) 1 0.8 0.6 0.4 0.2 70 80 90 100 110 120 +25 C +85 C -40 C SUPPLY CURRENT (mA) Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFIN)(Vs = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 6.94 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc +10 dBm 150 °C 0.451 W 144 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd1 & Vdd2 Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 67.2 67.4 67.6 Recommended Bias Resistor Values for Various Idd1 & Idd2 Idd1 + Idd2 (mA) 60 70 Rbias (Ohms) 27 16 13 8.2 3.9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 80 100 120 7-3 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing 7 AMPLIFIERS - LOW NOISE - SMT 7-4 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC382LP3 HMC382LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 382 XXXX 382 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1, 4, 5, 7, 9, 12, 14, 16 Function N/C Description No connection necessary. These pins may be connected to RF/DC ground. Performance will not be affected. Interface Schematic 2 RFIN This pin is AC coupled and matched to 50 Ohms. 3, 6, 10 GND These pins and package bottom must be connected to RF/DC ground. 8 Res This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass capacitors are required. See application circuit. Application Circuit Note: L1, L2 and C1 should be located as close to pins as possible. 7-5 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB 112582 [1] Item J1 - J2 J3 - J5 C1 C2, C3 C4, C5 L1 L2 R1 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 10 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 15000 pF Capacitor, 0603 Pkg. 56nH Inductor, 0603 Pkg. 18nH Inductor, 0603 Pkg. Resistor, 0402 Pkg. HMC382LP3 / HMC382LP3E Amplifier 112580 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed ground paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-6