409LP4E

HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Features Gain: 31 dB 40% pAe @ +32.5 dBm pout 2% eVm @ pout = +22 dBm with 54mbps ofDm signal +46 dBm output ip3 integrated power Control (Vpd) single +5V supply Typical Applications This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: • wimAX 802.16 • fixed wireless Access 9 Amplifiers - lineAr & power - smT • wireless local loop Functional Diagram General Description The HmC409lp4 & HmC409lp4e are high efficiency GaAs inGap HBT mmiC power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless smT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or rf output power/current control. for +22 dBm ofDm output power (64 QAm, 54 mbps), the HmC409lp4 & HmC409lp4e achieve an error vector magnitude (eVm) of 2%, meeting wimAX 802.16 linearity requirements. Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) [2] error Vector magnitude @ 3.5 GHz (54 mbps ofDm signal @ +22 dBm pout) noise figure supply Current (icq) Control Current (ipd) switching speed Bias Current (ibias) Vs= Vcc1 + Vcc2= +5V Vpd = +5V ton, toff 5.8 615 4 20 10 41 28 30 min. Typ. 3.3 - 3.4 32 0.04 10 13 30 32 45 42 28 0.05 29 max. min. Typ. 3.4 - 3.6 31.5 0.04 15 14 30.5 32.5 45.5 2 5.8 615 4 20 10 6 615 4 20 10 41 28 0.05 28 max. min. Typ. 3.6 - 3.8 30 0.035 15 10 30.5 32 45 0.045 max. Units GHz dB dB/ °C dB dB dBm dBm dBm % dB mA mA ns mA note 1: specifications and data reflect HmC409lp4 measured using the application circuit found herein. Contact the HmC Applications Group for assistance in optimizing performance for your application. note 2: Two-tone output power of +15 dBm per tone, 1 mHz spacing. 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Gain vs. Temperature 38 35 Broadband Gain & Return Loss 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 2 2.5 3 RESPONSE (dB) GAIN (dB) S21 S11 S22 32 29 26 23 20 +25 C +85 C -40 C 9 3.6 3.8 4 3.5 4 4.5 5 3 3.2 3.4 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) +25 C +85 C -40 C Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -10 -15 -20 -25 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) Power Down Isolation vs. Temperature 0 -10 ISOLATION (dB) +25 C +85 C -40 C -20 -30 -40 -50 -60 3 3.2 3.4 +25 C +85 C -40 C 3.6 3.8 4 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Psat vs. Temperature 36 34 32 PSAT (dBm) 30 28 26 24 22 +25 C +85 C -40 C P1dB vs. Temperature 36 34 32 P1dB (dBm) 30 28 26 24 +25 C +85 C -40 C 9 Amplifiers - lineAr & power - smT 22 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz) Output IP3 vs. Temperature 50 Power Compression @ 3.5 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -20 Pout (dBm) Gain (dB) PAE (%) 46 IP3 (dBm) 42 +25 C +85 C -40 C 38 34 30 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) -16 -12 -8 -4 0 4 8 INPUT POWER (dBm) Gain & Power vs. Supply Voltage 35 GAIN (dB), P1dB (dBm), Psat (dBm) 34 33 32 31 30 29 28 4.75 Gain Psat P1dB Noise Figure vs. Temperature 12 10 NOISE FIGURE (dB) 8 6 4 2 0 +25 C +85 C -40 C 5 Vcc SUPPLY VOLTAGE (Vdc) 5.25 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Power Dissipation 800 700 POWER DISSIPATION (W) 600 500 Icc (mA) 4.4 4 3.6 3.2 2.8 2.4 2 -20 Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz 40 GAIN (dB), P1dB (dBm), Psat (dBm) 35 30 25 20 15 10 5 0 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 Vpd (Vdc) Gain Psat P1dB Icc Max Pdiss @ +85C 400 300 200 100 0 5.5 9 -16 -12 -8 -4 0 4 8 INPUT POWER (dBm) EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal 14 ERROR VECTOR MAGNITUDE (%) 12 10 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 OUTPUT POWER (dBm) +25 C +85 C -40 C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 Amplifiers - lineAr & power - smT HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) Control Voltage (Vpd) rf input power (rfin)(Vs = Vpd = +5Vdc) Junction Temperature +5.5 Vdc +5.5 Vdc +10 dBm 150 °C 3.74 w 17.4 °C/w -65 to +150 °C -40 to +85 °C Vs (Vdc) 4.75 5.0 5.25 icq (mA) 516 615 721 9 Amplifiers - lineAr & power - smT Continuous pdiss (T = 85 °C) (derate 57.5 mw/°C above 85 °C) Thermal resistance (junction to ground paddle) storage Temperature operating Temperature eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions Outline Drawing noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inCHes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe. 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Package Information part number HmC409lp4 HmC409lp4e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl3 msl3 [1] package marking [3] H409 XXXX H409 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Application Circuit 9 Amplifiers - lineAr & power - smT 9-6 recommended Component Values C1 - C5 C6 - C7 C8 C9 C10 C11 l1, l2 l3 r1 100pf 1000pf 10 pf 0.5 pf 1.6 pf 4.7µf 3.9 nH 2.2 nH 56 ohm impedance physical length electrical length Tl1 50 ohm 0.068” 12˚ Tl2 27 ohm 0.062” 11˚ Tl3 50 ohm 0.164” 29˚ pCB material: 10 mil rogers 4350, er = 3.48 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Pin Descriptions pin number 1-3, 5, 6, 8, 10 -14, 18, 19, 21, 22, 24 4 function n/C Description no connection required. These pins may be connected to rf/DC ground without affecting performance. This pin is AC coupled and matched to 50 ohms. interface schematic rfin 9 7 Vpd Amplifiers - lineAr & power - smT power control pin. for maximum power, this pin should be connected to 5V thru a 56 Ω resistor. A high-voltage or small resistor is not recommended for lower idle current. This voltage can be reduced or the resistor increased. 9 Vbias DC power supply pin for bias circuitry 15, 16, 17 rfoUT rf output and DC bias for the output stage. 20 Vcc2 power supply voltage for the second amplifier stage. external bypass capacitors and pull up choke are required as shown in the application schematic. power supply voltage for the first amplifier stage. external bypass capacitors are required as shown in the application schematic. Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 23 Vcc1 GnD 9-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Evaluation PCB 9 Amplifiers - lineAr & power - smT 9-8 List of Materials for Evaluation PCB 108355 item J1 - J2 J3, J4 C1 - C5 C6 - C7 C8 C9 C10 C11 l1, l2 l3 r1 U1 pCB [2] Description pCB mount smA rf Connector 2 mm DC Header 100 pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 10 pf Capacitor, 0402 pkg. 0.5 pf Capacitor, 0603 pkg. 1.6 pf Capacitor, 0603 pkg. 4.7 µf, Tantalum 3.9 nH inductor, 0603 pkg. 2.2 nH inductor, 0402 pkg. Toko 56 ohm resistor, 0603 pkg. HmC409lp4 / HmC409lp4e Amplifier 108353 eval Board [1] The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350, er = 3.48 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com