413QS16GE

HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Typical Applications This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: • Cellular / PCS / 3G • Portable & Infrastructure Features Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit 11 LINEAR & POWER AMPLIFIERS - SMT • Wireless Local Loop Functional Diagram General Description The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V Vs= 3.6V Parameter Frequency Min. 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.1 GHz 2.1 - 2.2 GHz 1.6 - 2.2 GHz 1.6 - 2.2 GHz 1.6 - 2.2 GHz 1.6 - 1.7 GHz 1.7 - 2.2 GHz 1.6 - 1.7 GHz 1.7 - 2.2 GHz 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.2 GHz 1.6 - 2.2 GHz Vpd= 0V/3.6V Vpd= 3.6V tON, tOFF 32 33 32 20 21 18 19 18 17 Typ. 21 22 21 20 0.025 10 8 23 24 25.5 26.5 35 36 35 5.5 0.002/220 7 80 36 37 36 23 24 0.035 Max. Min. 19 20 19 18 Typ. 22 23 22 21 0.025 10 9 26 27 28.5 29.5 39 40 39 5.5 0.002/270 7 80 0.035 Max. dB dB dB dB dB/°C dB dB dBm dBm dBm dBm dBm dBm dBm dB mA mA ns Vs= 5V Units Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed 11 - 50 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Gain vs. Temperature, Vs= 3.6V 30 25 20 GAIN (dB) 15 10 5 0 1.3 +25 C +85 C -40 C Gain vs. Temperature, Vs= 5V 30 25 20 GAIN (dB) 15 10 5 0 1.3 +25 C +85 C -40 C 11 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss, Vs= 3.6V 0 Return Loss, Vs= 5V 0 S11 S22 -4 RETURN LOSS (dB) RETURN LOSS (dB) -4 -8 -8 -12 S11 S22 -12 -16 -16 -20 1.3 1.5 1.7 1.9 2.1 2.3 2.5 -20 1.3 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature, Vs= 3.6V 32 28 24 P1dB (dBm) 20 16 12 8 4 0 1.3 +25 C +85 C -40 C P1dB vs. Temperature, Vs= 5V 32 28 24 P1dB (dBm) 20 16 12 8 4 0 1.3 +25 C +85 C -40 C 1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 51 LINEAR & POWER AMPLIFIERS - SMT HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Psat vs. Temperature, Vs= 3.6V 32 28 24 Psat (dBm) Psat vs. Temperature, Vs= 5V 32 28 24 Psat (dBm) 20 16 12 8 4 0 1.3 +25 C +85 C -40 C 20 16 12 8 4 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 0 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression@ 1.9 GHz, Vs= 3.6V 46 Pout (dBm), GAIN (dB), PAE (%) 42 38 34 30 26 22 18 14 10 6 2 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pout (dBm) Gain (dB) PAE (%) Power Compression@ 1.9 GHz, Vs= 5V 46 Pout (dBm), GAIN (dB), PAE (%) 42 38 34 30 26 22 18 14 10 6 2 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pout (dBm) Gain (dB) PAE (%) INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 42 38 34 IP3 (dBm) Output IP3 vs. Temperature, Vs= 5V 44 40 36 IP3 (dBm) 32 28 24 20 16 12 1.3 +25 C +85 C -40 C 30 26 22 18 14 10 1.3 +25 C +85 C -40 C 1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) 11 - 52 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Reverse Isolation vs. Temperature, Vs= 3.6V 0 -10 ISOLATION (dB) +25 C +85 C -40 C Power Down Isolation, Vs= 3.6V 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 1.3 -20 -30 -40 -50 -60 -70 1.3 11 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3.6V 10 Noise Figure vs. Temperature, Vs= 5V 10 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 8 6 6 4 +25 C +85 C -40 C 4 +25 C +85 C -40 C 2 2 0 1.5 1.7 1.9 2.1 2.3 2.5 0 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 1.9 GHz 30 29 28 27 GAIN (dB) 26 25 24 23 22 21 20 2.75 3.25 3.75 4.25 4.75 P1dB Psat Gain Gain, Power & Quiescent Supply Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V 34 32 30 28 26 24 22 20 18 16 14 5.25 P1dB, Psat (dBm) GAIN (dB), P1dB (dBm), Psat (dBm) 28 330 25 Icq 270 22 210 Icq (mA) 19 Gain P1dB Psat 150 16 90 13 1.5 1.75 2 2.25 2.5 2.75 3 3.25 30 3.5 Vcc SUPPLY VOLTAGE (Vdc) Vpd (Vdc) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 53 LINEAR & POWER AMPLIFIERS - SMT HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd1, Vpd2) RF Input Power (RFIN)(Vs = +5Vdc, Vpd = +3.6 Vdc) Junction Temperature +5.5 Vdc +4.0 Vdc +15 dBm 150 °C 1.56 W 42 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 LINEAR & POWER AMPLIFIERS - SMT Continuous Pdiss (T = 85 °C) (derate 24 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC413QS16G HMC413QS16GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] HMC413 XXXX HMC413 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 54 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Pin Descriptions Pin Number Function Description Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. Interface Schematic 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 GND 3, 14 Vpd1, Vpd2 Power Control Pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 55 6 RFIN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz. 11, 12 RFOUT RF output and bias for the output stage. 16 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. List of Materials for Evaluation PCB 105000 [1] Item J1 - J2 J3 C1 C2 C3 - C4 C5 L1 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 2.2 pF Capacitor, 0603 Pkg. 10 pF Capacitor, 0402 Pkg. 330 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum 16 nH Inductor 0603 Pkg. HMC413QS16G / HMC413QS16GE Amplifier 105018 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 11 - 56 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Application Circuit 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 57 TL1 Impedance Length 50 Ohm 0.1” TL2 50 Ohm 0.15” TL3 50 Ohm 0.1” * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com