414MS8GE

HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: • BLUETOOTH • MMDS Features Gain: 20 dB Saturated Power: +30 dBm 32% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count 11 LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V Vs = 3.6V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V / 3.6V Vpd = 3.6V tON, tOFF 30 21 17 Typ. 2.2 - 2.8 20 0.03 8 9 25 27 35 6.5 0.002 / 240 7 45 35 23 25 0.04 17 Max. Min. Typ. 2.2 - 2.8 20 0.03 8 9 27 30 39 7.0 0.002 / 300 7 45 25 0.04 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA mA ns Vs = 5V 11 - 58 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Gain vs. Temperature, Vs= 3.6V 30 25 20 GAIN (dB) 15 10 5 0 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) +25 C +85 C -40 C Gain vs. Temperature, Vs= 5V 30 25 20 GAIN (dB) 15 10 5 0 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 59 Return Loss, Vs= 3.6V 0 Return Loss, Vs= 5V 0 -4 RETURN LOSS (dB) -8 RETURN LOSS (dB) S11 S22 -4 S11 S22 -8 -12 -12 -16 -16 -20 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) -20 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) P1dB vs. Temperature, Vs= 3.6V 32 28 24 P1dB (dBm) 20 16 12 8 4 0 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) +25 C +85 C -40 C P1dB vs. Temperature, Vs= 5V 32 28 24 P1dB (dBm) 20 16 12 8 4 0 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) +25 C +85 C -40 C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Psat vs. Temperature, Vs= 3.6V 32 28 24 Psat (dBm) Psat vs. Temperature, Vs= 5V 32 28 24 Psat (dBm) 20 16 12 8 4 0 +25 C +85 C -40 C 20 16 12 8 4 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 0 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) Power Compression@ 2.4 GHz, Vs= 3.6V 36 Pout (dBm), GAIN (dB), PAE (%) 30 24 18 12 6 0 -14 Pout Gain PAE Power Compression@ 2.4 GHz, Vs= 5V 36 Pout (dBm), GAIN (dB), PAE (%) 30 24 18 12 6 0 -14 Pout Gain PAE -9 -4 1 6 11 16 -9 -4 1 6 11 16 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 42 37 32 IP3 (dBm) 27 22 17 12 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) +25 C +85 C -40 C Output IP3 vs. Temperature, Vs= 5V 42 37 32 IP3 (dBm) 27 22 17 12 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) +25 C +85 C -40 C 11 - 60 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Reverse Isolation vs. Temperature, Vs= 3.6V 0 Power Down Isolation, Vs= 3.6V 0 -10 -10 ISOLATION (dB) ISOLATION (dB) -20 -30 -40 -50 -40 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) -60 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) -20 +25 C +85 C -40 C -30 11 LINEAR & POWER AMPLIFIERS - SMT Icq (mA) Noise Figure vs. Temperature, Vs= 3.6V 15 +25 C +85 C -40 C Noise Figure vs. Temperature, Vs= 5V 15 +25 C +85 C -40 C 12 NOISE FIGURE (dB) 12 NOISE FIGURE (dB) 2.8 3 9 9 6 6 3 3 0 2 2.2 2.4 2.6 FREQUENCY (GHz) 0 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) Gain & Power vs. Supply Voltage 28 P1dB Psat Gain, Power & Quiescent Supply Current vs Vpd@ 2.4 GHz 34 GAIN (dB), P1dB (dBm), Psat (dBm) 32 400 26 30 P1dB, Psat (dBm) 28 Psat P1dB 320 GAIN dB) 24 26 24 Icq 240 22 22 20 Gain 160 20 Gain 18 16 80 18 2.75 3.25 3.75 4.25 4.75 14 5.25 12 2 2.4 2.8 Vpd (Vdc) 3.2 0 3.6 Vcc SUPPLY VOLTAGE (Vdc) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 61 HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd1, Vpd2) RF Input Power (RFIN)(Vs = +5.0, Vpd = +3.6 Vdc) Junction Temperature +5.5 Vdc +4.0 Vdc +17 dBm 150 °C 1.755 W 37 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 LINEAR & POWER AMPLIFIERS - SMT Continuous Pdiss (T = 85 °C) (derate 27 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC414MS8G HMC414MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H414 XXXX H414 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 62 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Pin Descriptions Pin Number 1 Function RFIN Description This pin is AC coupled and matched to 50 Ohms. Not Connected. Interface Schematic 2 NC 3, 4 RFOUT RF output and DC bias for the output stage. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 63 5 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 6, 8 Vpd1, Vpd2 Power control pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 7 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. List of Materials for Evaluation PCB 105006 [1] Item J1 - J2 J3 C1 C2 C3 - C6 C7 L1 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 2.7 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 330 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum 18nH Inductor 0603 Pkg. HMC414MS8G / HMC414MS8GE Amplifier 105074 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 11 - 64 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Application Circuit 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 65 TL1 Impedance Length 50 Ohm 0.036” TL2 50 Ohm 0.3” TL3 50 Ohm 0.11” * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com