415LP3E

HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Features Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3V Power Down Capability Low External Part Count Typical Applications This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: • 802.11a WLAN • HiperLAN WLAN • Access Points 11 LINEAR & POWER AMPLIFIERS - SMT • UNII & ISM Radios Functional Diagram General Description The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 & HMC415LP3E achieve an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. Electrical Specifi cations, TA = +25° C, Vs = 3V, Vpd = 3V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Error Vector Magnitude (54 Mbps OFDM Signal @ +15 dBm Pout) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/3V Vpd = 3V tOn, tOff Icq = 200 mA 6 0.002 / 285 7 45 28 Icq = 285 mA Icq = 200 mA 20 18 Min. Typ. 4.9 - 5.1 20 0.04 10 10 22.5 22.0 25.5 31 29 20.5 0.05 18.5 Max. Min. Typ. 5.1 - 5.4 20.5 0.04 9 12 23.0 22.5 26 32 3.7 6 0.002 / 285 7 45 6 0.002 / 285 7 45 27 18 0.05 16 Max. Min. Typ. 5.4 - 5.9 19 0.04 8 8 21.5 21.0 24 30 0.05 Max. Units GHz dB dB / °C dB dB dBm dBm dBm % dB mA mA ns 11 - 66 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 3 4 5 6 7 8 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 24 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 4.8 5 5.2 5.4 5.6 5.8 6 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 67 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 +25 C +85 C -40 C -10 -15 +25 C +85 C -40 C -15 -20 4.8 5 5.2 5.4 5.6 5.8 6 -20 4.8 5 5.2 5.4 5.6 5.8 6 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 4.8 5 5.2 5.4 5.6 5.8 6 +25 C +85 C -40 C Psat vs. Temperature 30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 4.8 5 5.2 5.4 5.6 5.8 6 +25 C +85 C -40 C FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Power Compression @ 5.2 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 32 28 24 20 16 12 8 4 0 -12 -10 Pout (dBm) Gain (dB) PAE (%) Output IP3 vs. Temperature 40 38 36 34 OIP3 (dBm) 32 30 28 26 24 22 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT -8 -6 -4 -2 0 2 4 6 8 10 12 20 4.8 5 5.2 5.4 5.6 5.8 6 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 4.8 5 5.2 5.4 +25 C +85 C -40 C Gain & Power vs. Supply Voltage 28 Gain (dB), P1dB (dBm), Psat (dBm) 27 26 25 24 23 22 21 20 19 18 2.7 3 Vcc Supply Voltage (Vdc) Gain P1dB Psat 5.6 5.8 6 3.3 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 Power Down Isolation vs. Temperature 0 +25 C -10 ISOLATION (dB) +25 C +85 C -40 C -10 ISOLATION (dB) +85 C -40 C -20 -20 -30 -30 -40 -40 -50 4.8 5 5.2 5.4 5.6 5.8 6 -50 4.8 5 5.2 5.4 5.6 5.8 6 FREQUENCY (GHz) FREQUENCY (GHz) 11 - 68 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz EVM vs. Temperature, Icc = 240 mA, F = 5.2 GHz 8 ERROR VECTOR MAGNITUDE (%) 7 6 5 4 3 2 1 0 +25 C +85 C -40 C EVM vs. Supply Current, F = 5.2 GHz 8 ERROR VECTOR MAGNITUDE (%) 7 6 5 4 3 2 1 0 10 11 12 13 14 15 16 17 18 OUTPUT POWER (dBm) Icc=160mA Icc=200mA Icc=240mA Icc=280mA 11 10 11 12 13 14 15 16 17 18 OUTPUT POWER (dBm) Gain, Power & Quiescent Supply Current vs. Vpd @ 5.2 GHz 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1.5 1.75 2 2.25 Vpd (Vdc) 2.5 330 310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 3 GAIN (dB), P1dB (dBm), Psat (dBm) Gain P1dB Psat Icc 2.75 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 69 LINEAR & POWER AMPLIFIERS - SMT Icc (mA) HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) RF Input Power (RFIN)(Vs = Vpd = +3.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 17 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature +5Vdc +3.5 Vdc +13 dBm 150 °C 1.105 W 59 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 LINEAR & POWER AMPLIFIERS - SMT Operating Temperature Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC415LP3 HMC415LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 415 XXXX 415 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 70 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. 2, 3, 5, 6, 7, 8, 9, 12, 13, 15, 16 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 71 4 RFIN This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz. 10, 11 RFOUT RF output and DC bias for the output stage. 14 Vpd Power control pin. For maximum power, this pin should be connected to 3.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT List of Materials for Evaluation PCB 105173 [1] Item J1 - J2 J3 C1 - C3 C4 C5 C6 L1 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 330 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum 0.5 pF Capacitor, 0603 Pkg. 7.0 pF Capacitor, 0402 Pkg. 3.0 nH Inductor, 0805 Pkg. HMC415LP3 / HMC415LP3E Amplifier 104723 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 11 - 72 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Application Circuit 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 73 Recommended Component Values L1 C1, C2, C3 C4 C5 C6 3.0 nH 330 pF 2.2 μF 0.5 pF 7.0 pF Note 1: C1 should be located < 0.1” (2.54mm) from Pin 1 (Vcc) Note 2: C3 should be located < 0.1” (2.54mm) from L1. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com