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416LP4E

416LP4E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    416LP4E - MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
416LP4E 数据手册
HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Features Pout: +4.5 dBm Phase Noise: -114 dBc/Hz @100 k Hz No External Resonator Needed Single Supply: 3V @ 37 mA QFN Leadless SMT Package, 16 mm2 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Functional Diagram General Description The HMC416LP4 & HMC416LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 2.75 to 3.0 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 37 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package. 11 VCOS & PLOs - SMT Electrical Specifi cations, TA = +25° C, Vcc = +3V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) Supply Current (Icc) (Vcc = +3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate 9 -5 -16 3 -1 0.3 0 37 10 1.5 Min. Typ. 2.75 - 3.0 4.5 -114 10 Max. Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C 11 - 66 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Frequency vs. Tuning Voltage, Vcc= +3V 3.3 OUTPUT FREQUENCY (GHz) 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 2.4 +25C +85C -40C Frequency vs. Tuning Voltage, T= 25°C 3.3 OUTPUT FREQUENCY (GHz) 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 2.4 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 2.75V 3.0V 3.25V 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 11 VCOS & PLOs - SMT 6 Sensitivity vs. Tuning Voltage, Vcc= +3V 240 220 SENSITIVITY (MHz/VOLT) 200 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25C +85C -40C Output Power vs. Tuning Voltage, Vcc= +3V 10 9 OUTPUT POWER (dBm) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25C +85C -40C Phase Noise vs. Tuning Voltage -75 -80 SSB PHASE NOISE (dBc/Hz) Typical SSB Phase Noise @ Vtune= +5V 0 SSB PHASE NOISE (dBc/Hz) -25 -50 -75 +25C +85C -40C -85 -90 -95 10kHz offset 100kHz offset -100 -105 -110 -115 -120 -125 0 1 2 3 4 -100 -125 -150 3 10 5 6 7 8 9 10 10 4 10 5 10 TUNING VOLTAGE (VOLTS) OFFSET FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 67 HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Typical Supply Current vs. Vcc Vcc (V) 2.75 3.0 3.25 Icc (mA) 32 37 42 Absolute Maximum Ratings Vcc Vtune Channel Temperature Continuous Pdiss (T = 85°C) (derate 3.6 mW/°C above 85°C) Thermal Resistance (RTH) (junction to package base) Storage Temperature Operating Temperature +3.5 Vdc 0 to +11V 135 °C 180 mW 277 °C/W -65 to +150 °C -40 to +85 °C Note: VCO will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 11 VCOS & PLOs - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOT FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC416LP4 HMC416LP4E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H416 XXXX H416 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Pin Descriptions Pin Number 1- 14, 17 - 19, 21, 23, 24 Function N/C Description No Connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic 15 GND This pin must be connected to RF & DC ground. 16 RFOUT RF output (AC coupled) 20 Vcc Supply Voltage Vcc= 3V 11 VCOS & PLOs - SMT 11 - 69 22 VTUNE Control Voltage Input. Modulation port bandwidth dependent on drive source impedance. GND Package bottom has an exposed metal paddle that must be RF & DC grounded. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Evaluation PCB 11 VCOS & PLOs - SMT List of Materials for Evaluation PCB 105706 [1] Item J1 - J2 J3 - J4 C1 C2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 4.7 μF Tantalum Capacitor 10,000 pF Capacitor, 0603 Pkg. HMC416LP4 / HMC416LP4E VCO 105667 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 11 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Notes: 11 VCOS & PLOs - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 71
416LP4E
1. 物料型号: - HMC416LP4 / 416LP4E

2. 器件简介: - HMC416LP4和HMC416LP4E是基于砷化镓(GaAs)异质结双极晶体管(HBT)技术的MMIC压控振荡器(VCO),集成了谐振器、负阻抗器件、变容二极管和缓冲放大器。覆盖2.75至3.0 GHz频段,由于振荡器的单片结构,其相位噪声性能在温度、冲击、振动和工艺变化下表现优异。单电源3V @ 37 mA下,输出功率典型值为4.5 dBm。VCO采用低成本无引脚QFN 4 x 4 mm表贴封装。

3. 引脚分配: - 1-14, 17-19, 21, 23, 24:无连接(N/C),这些引脚可以连接到射频地,不影响性能。 - 15:GND,必须连接到射频和直流地。 - 16:RFOUT,射频输出(交流耦合)。 - 20:Vcc,供电电压,Vcc= 3V。 - 22:控制电压输入,调制端口,带宽取决于驱动源阻抗。

4. 参数特性: - 频率范围:2.75-3.0 GHz - 输出功率:1.5 dBm至4.5 dBm - 相位噪声:-114 dBc/Hz @ 100 kHz偏移,Vtune= +5V时的射频输出 - 调谐电压(Vtune):0至10V - 供电电流(Icc):37 mA(Vcc = +3.0V) - 调谐端口漏电流:至多10 uA - 输出回波损耗:至少9 dB - 谐波:二次谐波-5 dBc,三次谐波-16 dBc - 拉频:2.0:1 VSWR下3 MHz峰峰值 - 推频:Vtune= +5V时-1 MHz/V - 频率漂移率:0.3 MHz/°C

5. 功能详解: - HMC416LP4LP4E提供低噪声性能,无需外部谐振器,单电源供电,且具有QFN无引脚表贴封装。

6. 应用信息: - 无线基础设施、工业控制、测试设备和军事应用。

7. 封装信息: - HMC416LP4采用低应力注塑塑料封装,Sn/Pb焊料,MSL等级1,标记为XXXX H416。 - HMC416LP4E符合RoHS标准的低应力注塑塑料封装,100%亚光Sn焊料,MSL等级1,标记为XXXX H416。
416LP4E 价格&库存

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