423MS8E

423MS8E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    423MS8E - GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
423MS8E 数据手册
HMC423MS8 / 423MS8E v02.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz Typical Applications The HMC423MS8 / HMC423MS8E is ideal for: • Base Stations • Portable Wireless • CATV/DBS Features Integrated LO Amplifier w/ Pdiss 92 >92 1 5 0 61 89 >92 2 25 31 70 87 >92 3 27 45 49 73 >92 4 26 57 78 77 >92 Harmonics of LO nLO Spur @ RF Port LO Freq. (GHz) 0.7 0.85 1 1.15 1.3 1.45 1 30 34 38 40 42 39 2 15 16 19 22 26 31 3 42 50 48 54 44 50 4 40 42 52 58 59 60 RF = 1.0 GHz @ -10 dBm LO = 0.9 GHz @ 0 dBm All values in dBc relative to the IF. Measured as downconverter. LO = 0 dBm All values in dBc below input LO level @ RF port. * Two-tone input power = 0 dBm each tone, 1 MHz spacing. 9 - 280 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC423MS8 / 423MS8E v02.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +3V) LO Drive (Vdd = +3V) Vdd IF DC Current Channel Temperature (Tc) Continuous Pdiss (T = 85°C) (Derate 4.8 mW/°C above 85 C) Storage Temperature Operating Temperature +13 dBm +13 dBm +7 Vdc ±18 mA 150 °C 0.32 W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 MIXERS - DBL-BAL - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Outline Drawing Package Information Part Number HMC423MS8 HMC423MS8E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H423 XXXX H423 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 281 HMC423MS8 / 423MS8E v02.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz Pin Description Pin Number Function Description Interface Schematic 1 LO This pin is AC coupled and matched to 50 Ohm from 0.6 - 1.3 GHz. 9 MIXERS - DBL-BAL - SMT 2, 3, 6, 7 GND Pins must connect to RF ground. 4 Vdd Power supply for the LO Amplifier. One external RF bypass capacitor (10,000 pF) is required. 5 IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 18 mA of current or die nonfunction and possible die failure will result. 8 RF This pin is DC coupled and matched to 50 Ohm from 0.6 - 1.3 GHz Application Circuit C1 L1 10,000 pF 4.7 nH 9 - 282 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC423MS8 / 423MS8E v02.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.6 - 1.3 GHz Evaluation PCB 9 MIXERS - DBL-BAL - SMT List of Materials for Evaluation PCB 105190 [1] Item J1 - J3 J4, J5 C1 L1 U1 PCB [2] Description PCB Mount SMA Connector, Johnson DC Pin 10k pF Chip Capacitor, 0603 Pkg. 4.7 nH Inductor, 0805 Pkg. HMC423MS8 / HMC423MS8E Mixer 104964 Evaluation Board, 1.00” x 1.00” [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 283
423MS8E
1. 物料型号: - HMC423MS8:低应力注塑成型塑料封装,Sn/Pb焊料,MSL等级1,包装标记为H423 XXXX。 - HMC423MS8E:符合RoHS标准的低应力注塑成型塑料封装,100%亚光Sn焊料,MSL等级1,包装标记为H423 XXXX。

2. 器件简介: - HMC423MS8/HMC423MS8E是带有集成本振放大器的双平衡混频器IC,可以在0.6 GHz至1.3 GHz之间作为上变频器或下变频器工作。集成的本振放大器使得混频器仅需要0 dBm的本振驱动电平,并且仅需要从单个正+3V电源轨吸取15mA电流。

3. 引脚分配: - 引脚1:Vdd,电源供应。 - 引脚2、3、6、7:GND,必须连接到射频地。 - 引脚4:Vdd,本振放大器的电源。 - 引脚5:IF,直流耦合,若不需要直流操作,应外部使用串联电容器进行直流阻断。 - 引脚8:RF,直流耦合,匹配至50欧姆。

4. 参数特性: - 工作频率范围:0.6-1.3 GHz。 - 转换损耗:8 dB。 - 噪声系数:8 dB。 - 输入IP3:+15 dBm。 - 供电电流:15 mA。

5. 功能详解: - 该混频器集成了本振放大器,具有低功耗和低本振驱动电平的特点,适用于基站、便携无线、CATV/DBS和ISM等应用。

6. 应用信息: - 适用于基站、便携无线设备、CATV/DBS和ISM等场景。 - 电路板应使用射频电路设计技术,信号线应具有50欧姆的阻抗,并且封装地引脚应直接连接到地平面。

7. 封装信息: - HMC423MS8和HMC423MS8E均采用SMT封装,具体尺寸和材料信息在文档中有详细图纸说明。
423MS8E 价格&库存

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