0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
427LP3E

427LP3E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    427LP3E - GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
427LP3E 数据手册
HMC427LP3 / 427LP3E v07.0805 GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz Typical Applications The HMC427LP3 / HMC427LP3E is ideal for: • Test Instrumentation • Fiber Optics & Broadband Telecom • Basestation Infrastructure • Microwave Radio & VSAT • Military Radios, Radar, & ECM Features High Isolation: 40 ~ 45 dB thru 6 GHz Low Insertion Loss: 1.2 dB@ 6 GHz Non-Reflective Design 3 x 3 mm SMT Package Functional Diagram General Description The HMC427LP3 & HMC427LP3E are low loss broadband positive control transfer switches in leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. The switch operates using a positive control voltage of 0/+5V and requires a fixed bias of +5V @ < 20 μA. 10 SWITCHES - SMT * Blocking capacitors are required at ports RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency. Electrical Specifi cations, TA = +25° C, With 0/+5V Control, 50 Ohm System Parameter Insertion Loss Frequency DC - 6.0 GHz DC - 8.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz DC - 6.0 GHz DC - 8.0 GHz 1.0 - 8.0 GHz 1.0 - 8.0 GHz DC - 8.0 GHz 2 4 ns ns 23 37 42 37 33 27 Min. Typ. 1.2 1.6 48 42 38 32 17 15 26 43 Max. 1.6 2.1 Units dB dB dB dB dB dB dB dB dBm dBm Isolation Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 10 - 256 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC427LP3 / 427LP3E v07.0805 GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz Insertion Loss vs. Temperature 0 Isolation 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 INSERTION LOSS (dB) -1 RF4 to RF1 RF2 to RF3 RF4 to RF2 RF1 to RF3 -2 -3 +25 C +85 C -40 C -4 -5 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 10 SWITCHES - SMT 10 - 257 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point 30 INPUT COMPRESSION POINT (dBm) 28 26 24 22 20 18 16 14 12 10 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 1 dB Compression Point 0.1 dB Compression Point RF1 RF2 RF3 RF4 Input Third Order Intercept Point INPUT THIRD ORDER INTERCEPT POINT (dBm) 50 45 40 35 30 25 20 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC427LP3 / 427LP3E v07.0805 GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz Absolute Maximum Ratings Bias Voltage Range (Vdd) Control Voltage Range (A & B) Channel Temperature Thermal Resistance Storage Temperature Operating Temperature Maximum Input Power ESD Sensitivity (HBM) +7.0 Vdc -0.5V to Vdd +1.0 Vdc 150 °C 130 °C/W -65 to +150 °C -40 to +85 °C +27 dBm Class 1A Bias Voltage & Current Vdd Range = +5.0 Vdc ± 10 % Vdd (Vdc) +5.0 Idd (Typ.) (μA) 5 Idd (Max.) (μA) 10 Control Voltages State Low High Bias Condition 0 to +0.2 Vdc @ 5 μA Typical Vdd ± 0.2 Vdc @ 5 μA Typical 10 SWITCHES - SMT ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: DC blocking capacitors are required at ports RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency. Truth Table Control Input A Low High B High Low RF4 to RF2 On Off Signal Path State RF1 to RF3 On Off RF4 to RF1 Off On RF2 to RF3 Off On 10 - 258 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC427LP3 / 427LP3E v07.0805 GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz Outline Drawing 10 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC427LP3 HMC427LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 427 XXXX 427 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 259 SWITCHES - SMT HMC427LP3 / 427LP3E v07.0805 GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz Pin Descriptions Pin Number 1, 4, 9, 12 2, 3, 5, 8, 10, 11, 13, 14, 16 Function RF4, RF1, RF3, RF2 Description This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required. This pin should be connected to PCB RF ground to maximize isolation. Package bottom has exposed metal paddle that must be connected to PCB RF ground. Interface Schematic N/C GND 6 CTRLA See truth table and control voltage table. 10 SWITCHES - SMT 7 CTRLB See truth table and control voltage table. 15 VDD Supply Voltage +5V ± 10%. 10 - 260 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC427LP3 / 427LP3E v07.0805 GaAs MMIC POSITIVE CONTROL TRANSFER SWITCH, DC* - 8 GHz Evaluation PCB 10 SWITCHES - SMT List of Materials for Evaluation PCB 105672 [1] Item J1 - J4 J5 - J8 C1 C2 - C5 R1 - R2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 1000 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 100 Ohm Resistor, 0603 Pkg. HMC427LP3 / HMC427LP3E Transfer Switch 105674 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 261
427LP3E
物料型号: - HMC427LP3:低应力注塑成型塑料封装,Sn/Pb焊料,MSL等级1,封装标记为427 xXXX。 - HMC427LP3E:符合RoHS的低应力注塑成型塑料封装,100%亚光Sn,MSL等级1(2),封装标记为427 xXXX。

器件简介: HMC427LP3和HMC427LP3E是低损耗宽带正控制传输开关,采用无引线表面贴装封装。覆盖直流至8GHz,提供高隔离度和低插入损耗。开关使用正控制电压0/+5V工作,需要固定偏置+5V @ <20μA。

引脚分配: - 1, 4, 9, 12:RF4, RF1, RF3, RF2,这些引脚是直流耦合且匹配至50欧姆,需要外部阻塞电容器。 - 2, 3, 5, 8, 10, 11, 13, 14, 16:N/C,这些引脚应连接至PCB射频地以最大化隔离度。 - GND:封装底部有暴露的金属片,必须连接至PCB射频地。 - 6:CTRLA,见真值表和控制电压表。 - 7:CTRLB,见真值表和控制电压表。 - 15:VDD,供电电压+5V±10%。

参数特性: - 高隔离度:6GHz以下40~45dB。 - 低插入损耗:6GHz时为1.2dB。 - 非反射设计。 - 3 x 3 mm SMT封装。

功能详解: HMC427LP3和HMC427LP3E是用于测试仪器、光纤与宽带电信、基站基础设施、微波无线电和VSAT、军用无线电、雷达和ECM等领域的高性能开关。

应用信息: 该开关适用于需要宽带、低损耗和高隔离度的应用场合,如测试仪器、光纤与宽带电信等。

封装信息: - HMC427LP3:低应力注塑成型塑料,Sn/Pb焊料,MSL1,封装标记427 xXXX。 - HMC427LP3E:符合RoHS的低应力注塑成型塑料,100%亚光Sn,MSL1(2),封装标记427 xXXX。
427LP3E 价格&库存

很抱歉,暂时无法提供与“427LP3E”相匹配的价格&库存,您可以联系我们找货

免费人工找货