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435MS8GE

435MS8GE

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    435MS8GE - SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
435MS8GE 数据手册
HMC435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications The HMC435MS8G / HMC435MS8GE is ideal for: • Basestation Infrastructure • MMDS & 3.5 GHz WLL • CATV/CMTS • Test Instrumentation Features High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz Positive Control: 0/+5V 51 dBm Input IP3 Non-Reflective Design MS8G SMT Package, 14.8 mm2 9 SWITCHES - SMT Functional Diagram General Description The HMC435MS8G & HMC435MS8GE are nonreflective DC to 4 GHz GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with exposed ground paddles. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. Onchip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents. Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System Parameter Insertion Loss Frequency DC - 2.5 GHz DC - 3.6 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.6 GHz DC - 4.0 GHz DC - 2.5 GHz DC - 3.6 GHz DC - 4.0 GHz 0.5 - 4.0 GHz 0.5 - 4.0 GHz 0.5 - 1.0 GHz 0.5 - 2.5 GHz 0.5 - 4.0 GHz DC - 4.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 40 60 ns ns 56 46 43 37 30 15 13 11 16 27 48 45 41 Min. Typ. 0.8 1.2 1.5 60 50 47 41 35 20 17 15 21 31 51 48 45 Max. 1.0 1.5 1.8 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm Isolation (RFC to RF1/RF2) Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed 9 - 256 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Insertion Loss 0 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 RFC RF1, RF2 OFF RF1, RF2 ON INSERTION LOSS (dB) -1 -2 + 25C + 85C - 40C -3 -4 -5 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 0 0.5 1 1.5 2 2.5 3 3.5 4 9 SWITCHES - SMT FREQUENCY (GHz) Isolation Between Ports RFC and RF1 / RF2 0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) RF1 RF2 Isolation Between Ports RF1 and RF2 0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) RFC - RF1 ON RFC - RF2 ON ISOLATION (dB) 0.1 and 1 dB Input Compression Point 35 INPUT COMPRESSION (dBm) Input Third Order Intercept Point 60 58 56 +25 C +85 C -40 C 30 INPUT IP3 (dBm) 1 dB Compression Point 0.1 dB Compression Point ISOLATION (dB) 3 3.5 4 54 52 50 48 46 44 42 25 20 15 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 40 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 257 HMC435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Control Voltages *Control Input Tolerances are ± 0.2 Vdc State Low High Bias Condition* 0 Vdc @ 25 μA Typical +5 Vdc @ 25 μA Typical Absolute Maximum Ratings Control Voltage Range Storage Temperature Operating Temperature RF Input Power Vctl = 0/+5V ESD Sensitivity (HBM) -0.5 to +7.5 Vdc -65 to +150 °C -40 to +85 °C +31 dBm Class 1A Truth Table Control Input Signal Path State B High Low RFC to: RF1 RF2 A Low High 9 SWITCHES - SMT ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DC blocks are required at ports RFC, RF1, RF2. Do not operate continuously at RF power input greater than 1 dB compression and do not “Hot Switch” power levels greater than +24 dBm (control = 0/+5 Vdc). 9 - 258 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Outline Drawing 9 SWITCHES - SMT 9 - 259 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC435MS8G HMC435MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H435 XXXX H435 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Pin Descriptions Pin Number 1 Function A Description See truth and control voltage tables. Interface Schematic 2 B See truth and control voltage tables. 3, 5, 8 RFC, RF1, RF2 These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. 9 SWITCHES - SMT 4 N/C Not Connected 6, 7 GND Package bottom has exposed metal paddle that must be connected to PCB RF ground as well. 9 - 260 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Evaluation PCB 9 SWITCHES - SMT List of Materials for Evaluation PCB 105143 [1] Item J1 - J3 J4 - J7 C1 - C3 R1 - R2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 pF Capacitor, 0402 Pkg. 100 Ohm Resistor, 0402 Pkg. HMC435MS8G / HMC435MS8GE SPDT Switch 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and backside ground slug should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. Note: Pin J6 is unused and need not be connected. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 261
435MS8GE
### 物料型号 - 型号:HMC435MS8G / HMC435MS8GE - 类型:SPDT非反射开关,工作频率为DC至4.0 GHz

### 器件简介 - 描述:HMC435MS8G和HMC435MS8GE是工作在DC至4 GHz的GaAs MESFET SPDT开关,采用低成本的8引脚MSOP8G表面贴装封装,带有暴露的接地垫片。这些开关非常适合用于基站/PCS/3G基站应用,提供50至60 dB的隔离度、低插入损耗和高输入IP3。

### 引脚分配 - 引脚1:A(控制输入) - 引脚2:B(控制输入) - 引脚3、5、8:RFC, RF1, RF2(射频端口,需要外部直流阻断电容) - 引脚4:N/C(未连接) - 引脚6、7:GND(接地)

### 参数特性 - 插入损耗:在DC至2.5 GHz、3.6 GHz和4.0 GHz的频率下分别为0.8 dB、1.2 dB和1.5 dB。 - 隔离度:在1 GHz、2 GHz、2.5 GHz、3.6 GHz和4.0 GHz的频率下分别为60 dB、50 dB、47 dB、41 dB和35 dB。 - 回波损耗(导通状态):在DC至2.5 GHz、3.6 GHz和4.0 GHz的频率下分别为20 dB、17 dB和15 dB。 - 回波损耗(关闭状态):在0.5至4.0 GHz的频率下为21 dB。 - 输入功率压缩点:在0.5至4.0 GHz的频率下为31 dBm。 - 三阶互调截取点:在0.5至1.0 GHz、0.5至2.5 GHz和0.5至4.0 GHz的频率下分别为51 dBm、48 dBm和45 dBm。

### 功能详解 - 高隔离度:在1 GHz频率下为60 dB,在2 GHz频率下为50 dB。 - 正控制:0/+5V。 - 输入IP3:51 dBm。 - 非反射设计:MS8G表面贴装封装,面积为14.8 mm²。

### 应用信息 - 典型应用:基站基础设施、MMDS和3.5 GHz WLL、CATV/CMTS、测试仪器。

### 封装信息 - 封装类型:MSOP8G表面贴装封装。 - 封装材料:低应力注塑塑料。 - 焊料:Sn/Pb焊料或100%雾锡(RoHS合规)。 - MSL等级:MSL1。 - 封装标记:H435 XXXX。
435MS8GE 价格&库存

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