451LP3E

HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Features Gain: 18 dB saturated power: +21 dBm @ 18% pAe output ip3: +28 dBm single supply: +5V @ 120 mA 50 ohm matched input/output 16 lead 3x3mm smT package: 9mm² Typical Applications The HmC451lp3(e) is ideal for: • microwave radio & VsAT • military & space • Test equipment & sensors 9 Amplifiers - lineAr & power - smT • fiber optics • lo Driver for HmC mixers Functional Diagram General Description The HmC451lp3(e) is an efficient GaAs pHemT mmiC medium power Amplifier housed in a leadless roHs compliant smT package. operating between 5 and 18 GHz, the amplifier provides 18 dB of gain, +21 dBm of saturated power and 18% pAe from a single +5V supply. This 50 ohm matched amplifier does not require any external components and the rf i/o’s are DC blocked, making it an ideal linear gain block or lo driver for HmC mixers. The HmC451lp3(e) eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +5V parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) 16.5 15 min. Typ. 5 - 16 18 0.02 13 12 19.5 21 28 7 120 150 16 0.03 12.5 max. min. Typ. 16 - 18 16 0.02 13 8 19 20 25 7 120 150 0.03 max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Gain vs. Temperature 24 20 16 GAIN (dB) 12 8 +25C +85C -40C Broadband Gain & Return Loss 25 15 RESPONSE (dB) S21 S11 S22 5 -5 -15 9 16 18 20 4 0 4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 FREQUENCY (GHz) FREQUENCY (GHz) -25 Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 +25C +85C -40C -20 -20 -25 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) -25 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) P1dB vs. Temperature 28 24 20 P1dB (dBm) 16 12 8 4 0 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 28 24 20 Psat (dBm) 16 12 8 4 0 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) +25C +85C -40C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Power Compression @ 17 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -18 Power Compression @ 10 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -18 Pout (dBm) Gain (dB) PAE (%) Pout (dBm) Gain (dB) PAE (%) 9 Amplifiers - lineAr & power - smT -14 -10 -6 -2 2 6 -14 -10 -6 -2 2 6 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 32 30 28 IP3 (dBm) 26 24 22 20 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) Noise Figure vs. Temperature 12 10 NOISE FIGURE (dB) 8 6 +25C +85C -40C +25C +85C -40C 4 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz 22 GAIN (dB), P1dB (dBm), Psat (dBm) 21 20 19 18 17 16 4.5 Gain P1dB Psat Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 +25C +85C -40C 5 Vdd (V) 5.5 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Typical Supply Current vs. Vdd1 = Vdd2 Vdd1 = Vdd2 (V) +4.5 +5.0 +5.5 idd1 + idd2 (mA) 120 122 124 Absolute Maximum Ratings Drain Bias Voltage (Vdd1 = Vdd2) rf input power (rfin)(Vdd = +5Vdc) Channel Temperature Continuous pdiss (T = 85 °C) (derate 12.8 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +5.5V +10 dBm 150 °C 0.83 w 78 °C/w -65 to +150 °C -40 to +85 °C note: Amplifier will operate over full voltage range shown above eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions 9 Amplifiers - lineAr & power - smT 9-4 Outline Drawing noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inCHes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Package Information part number HmC451lp3 HmC451lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 451 XXXX 451 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Pin Descriptions pin number 1, 2, 4 - 9, 11, 12, 14, 16 3 function n/C rfin rfoUT Description This pin may be connected to rf/DC ground. performance will not be affected. This pin is AC coupled and matched to 50 ohms. This pin is AC coupled and matched to 50 ohms. interface schematic 9 Amplifiers - lineAr & power - smT 10 13 Vdd2 power supply Voltage for the amplifier. external bypass capacitors of 100 pf, 1,000 pf and 2.2 µf are required. 15 Vdd1 power supply Voltage for the amplifier. external bypass capacitors of 100 pf, 1,000 pf and 2.2 µf are required. GnD package bottom must be connected to rf/DC ground. Application Circuit Component C1, C2 C3, C4 C5, C6 Value 100 pf 1,000 pf 2.2 µf 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Evaluation PCB 9 Amplifiers - lineAr & power - smT 9-6 List of Materials for Evaluation PCB 120202 item J1 - J2 J3 - J5 C1, C2 C3, C4 C5, C6 U1 pCB [2] Description pCB mount smA Connector DC pin 100 pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 2.2 µf Capacitor, Tantalum HmC451lp3(e) Amplifier 120201 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: Arlon 25fr The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com