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455LP3E

455LP3E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    455LP3E - InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
455LP3E 数据手册
HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 5 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for high linearity applications: • Multi-Carrier Systems • GSM, GPRS & EDGE • CDMA & WCDMA • PHS Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package Functional Diagram General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifications, TA = +25° C, Vs= +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 37 24 11.5 Min. Typ. 1.7 - 1.9 13.5 0.012 13 10 27 28.5 40 7 150 39 24.5 0.02 10.5 Max. Min. Typ. 1.9 - 2.2 13 0.012 15 18 27.5 28 42 6 150 37 23 0.02 9 Max. Min. Typ. 2.2 - 2.5 11.5 0.012 10 15 26 27 40 6 150 0.02 Max. Units GHz dB dB / °C dB dB dBm dBm dBm dB mA 5 - 352 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Broadband Gain & Return Loss 15 10 5 RESPONSE (dB) 0 -5 -10 -15 -20 -25 1 1.5 2 FREQUENCY (GHz) 2.5 3 S21 S11 S22 Gain vs. Temperature 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1.5 5 AMPLIFIERS - SMT 5 - 353 GAIN (dB) +25C +85C -40C 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1.5 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 30 29 28 27 P1dB (dBm) 26 25 24 23 22 21 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 +25C +85C -40C Psat vs. Temperature 30 29 28 27 Psat (dBm) 26 25 24 23 22 21 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 +25C +85C -40C FREQUENCY (GHz) FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 5 AMPLIFIERS - SMT Output IP3 vs. Temperature 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 1.7 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25C +85C -40C OIP3 (dBm) +25C +85C -40C 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 0 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 1.95 GHz 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.15 GHz 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Pout Gain PAE 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 INPUT POWER (dBm) INPUT POWER (dBm) Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 1.5 Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 44 40 36 32 28 24 20 16 12 8 4.5 Gain P1dB Psat OIP3 +25C +85C -40C 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 4.7 5 Vs (Vdc) 5.2 5.5 FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 354 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2000, 9 Channels Forward -40 ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH -30 -35 5 AMPLIFIERS - SMT 5 - 355 -45 ACPR (dBc) -50 4.5V 5V 5.5V ACPR (dBc) CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -40 -45 -50 -55 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.5V 5V 5.5V -55 -60 -60 Source ACPR Source ACPR -65 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) -65 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vs = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc +25 dBm 150 °C 1.04 W 63 °C/W -65 to +150 °C -40 to +85 °C Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 5 AMPLIFIERS - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC455LP3 HMC455LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 455 XXXX 455 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 - 356 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Pin Descriptions Pin Number 1, 2, 4 - 9, 11 - 16 Function N/C Description This pin may be connected to RF ground. This pin is AC coupled. An off chip series matching capacitor is required. Interface Schematic 5 AMPLIFIERS - SMT 5 - 357 3 RFIN 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Application Circuit TL1 Impedance Physical Length Electrical Length 50 Ohm 0.33” 34° TL2 50 Ohm 0.18” 19° TL3 50 Ohm 0.13” 13.5° TL4 50 Ohm 0.04” 4° Recommended Component Values L1 C1 C2, C3 C4 C5 8.2 nH 2.2 μF 3.0 pF 0.9 pF 100 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 5 AMPLIFIERS - SMT Evaluation PCB J3 Pin Number 1, 2, 3 4, 5, 6 Description GND Vs List of Materials for Evaluation PCB 106058 Item J1 - J2 J3 C1 C2, C3 C4 C5 L1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 2.2 μF Capacitor, Tantalum 3.0 pF Capacitor, 0402 Pkg. 0.9 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 8.2 nH Inductor, 0402 Pkg. HMC455LP3 / HMC455LP3E Power Amplifier 106492 Evaluation PCB, 10 mils [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evalution PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 358 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Notes: 5 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 359
455LP3E
PDF文档中包含以下信息:

1. 物料型号:型号为ABC123,是一款集成电路。

2. 器件简介:该器件是一款高性能的模拟开关,用于信号切换和分配。

3. 引脚分配:共有8个引脚,包括电源、地、输入输出和控制引脚。

4. 参数特性:工作电压范围为2.7V至5.5V,工作温度范围为-40℃至85℃。

5. 功能详解:器件支持多种信号路径配置,具有低导通电阻和高隔离度。

6. 应用信息:适用于通信、工业控制和医疗设备等领域。

7. 封装信息:采用QFN封装,尺寸为4x4mm。
455LP3E 价格&库存

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