462LP5E

HMC462LP5 / 462LP5E v04.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Features Noise Figure: 2.5 dB @ 10 GHz Gain: 13 dB P1dB Output Power: +14.5 dBm @ 10 GHz Self-Biased: +5V @ 66mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC462LP5 / HMC462LP5E Wideband LNA is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military EW, ECM & C3I • Test Instrumentation • Fiber Optics Functional Diagram General Description The HMC462LP5 & HMC462LP5E are GaAs MMIC pHEMT Low Noise Distributed Amplifiers in leadless 5x5 mm surface mount packages which operate between 2 and 20 GHz. The self-biased amplifier provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression while requiring only 66 mA from a single +5V supply. Gain flatness is excellent from 6 - 18 GHz making the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25° C, Vdd= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V) 12 12 Min. Typ. 2-6 14 ±0.5 0.015 3.0 15 12 15 17 26 66 85 11 0.025 4.0 11 Max. Min. Typ. 6 - 14 13 ±0.5 0.02 2.5 13 12 14 16 25 66 85 9 0.03 4.0 10 Max. Min. Typ. 14 - 20 12 ±0.5 0.03 4.0 11 8 12 15 22 66 85 0.04 6.0 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462LP5 / 462LP5E v04.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Gain vs. Temperature 20 Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) S21 S11 S22 7 AMPLIFIERS - LOW NOISE - SMT 7-2 16 GAIN (dB) 12 8 +25C +85C -40C 4 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -5 +25C +85C -40C -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Noise Figure vs. Temperature 10 +25C +85C -40C NOISE FIGURE (dB) +25C +85C -40C 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462LP5 / 462LP5E v04.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Psat vs. Temperature 20 7 AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature 20 17 P1dB (dBm) Psat (dBm) 17 14 14 +25C +85C -40C 11 +25C +85C -40C 11 8 8 5 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 5 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output IP3 vs. Temperature 30 Gain, Power, Noise Figure & Supply Current vs. Supply Voltage @ 10 GHz GAIN (dB), P1dB (dBm), Noise Figure (dB) 22 20 18 16 14 12 10 8 6 4 2 0 4.5 5 Vdd (V) Gain P1dB Noise Figure Idd 72 70 68 66 64 62 60 58 56 54 52 50 5.5 Idd (mA) 27 IP3 (dBm) 24 21 +25C +85C -40C 18 15 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 50 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +9 Vdc +18 dBm 150 °C 3.25 W 52 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 +7.5 +8.0 +8.5 Idd (mA) 66 67 68 71 72 73 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-3 HMC462LP5 / 462LP5E v04.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Outline Drawing 7 AMPLIFIERS - LOW NOISE - SMT H462 XXXX H462 XXXX NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED L AND PATTERN. Package Information Part Number HMC462LP5 HMC462LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC462LP5 / 462LP5E v04.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1 - 4, 6 - 20, 22 - 29, 31, 32 5 21 Function N/C RFIN RFOUT Description No connection. These pins may be connected to RF ground. Performance will not be affected. This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 30 Vdd Power supply voltage for the amplifier. External bypass capacitors are required. Ground Paddle GND Ground paddle must be connected to RF/DC ground. 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462LP5 / 462LP5E v04.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB 108338 Item J1 - J2 J3 C1 C2 C3 U1 PCB [2] Description PCB Mount SMA Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 µF Capacitor, Tantalum HMC462LP5 / HMC462LP5E 109751 Evaluation PCB [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6