469MS8GE

HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Features P1dB Output Power: +18 dBm Gain: 15 dB Output IP3: +34 dBm Supply (Vs): +5V to +12V 14.9 mm2 Ultra Small 8 Lead MSOP Typical Applications 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC469MS8G /HMC469MS8GE is a dual RF/IF gain block & LO or PA driver: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment General Description Functional Diagram The HMC469MS8G & HMC469MS8GE are SiGe HBT Dual Channel Gain Block MMIC SMT amplifiers covering DC to 5 GHz. These versatile products contain two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90° hybrids to create a high linearity driver amplifier. Each amplifier in the HMC469MS8G(E) offers 15 dB of gain, +18 dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The combined dual amplifier circuit delivers up to +20 dBm P1dB with +35 dBm OIP3 for specific application bands through 4 GHz. Electrical Specifi cations, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz 2.5 - 4.0 GHz 4.0 - 5.0 GHz DC - 3.0 GHz 3.0 - 5.0 GHz Min. 12.5 11 10 9 7.5 Typ. 15 13 12 11 9.5 0.008 12 10 8 14 10 8 6 18 18 16 14 12.5 11 34 30 25 23 4.0 5.0 75 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss 0.012 Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) 15 13 11 9.5 8 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. All specifi cations refer to a single amplifi er. 9 - 44 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) Gain vs. Temperature 20 9 +25C +85C -40C 16 0 -5 -10 -15 -20 -25 0 1 2 3 12 8 4 0 4 5 6 7 8 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 -10 -15 +25C +85C -40C -15 +25C +85C -40C -20 0 1 2 3 4 5 6 FREQUENCY (GHz) -20 0 1 2 3 4 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) Noise Figure vs. Temperature 10 +25C +85C -40C -5 +25C +85C -40C 8 NOISE FIGURE (dB) -10 6 -15 4 -20 2 -25 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 FREQUENCY (GHz) Data shown is of a single amplifi er. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 45 DRIVER & GAIN BLOCK AMPLIFIERS - SMT GAIN (dB) 5 S21 S11 S22 HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT P1dB vs. Temperature 22 20 18 16 P1dB (dBm) Psat vs. Temperature 22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 +25C +85C -40C 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C 0 1 2 3 4 5 6 FREQUENCY (GHz) Output IP3 vs. Temperature 40 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 75 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 36 30 24 18 12 6 0 5 6 7 8 9 10 11 12 Vs (Vdc) Gain P1dB Psat IP3 35 IP3 (dBm) 30 25 +25C +85C -40C 20 15 0 1 2 3 4 5 6 FREQUENCY (GHz) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms 82 80 78 Icc (mA) 76 74 72 70 68 66 3.8 -40C +25C +85C Cross Channel Isolation 0 -5 PATH ISOLATION (dB) -10 -15 -20 -25 -30 -35 -40 -45 INPUT1-OUTPUT2 INPUT2-OUTPUT1 3.9 4 4.1 4.2 Vcc (Vdc) 4.3 4.4 4.5 4.6 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Data shown is of a single amplifi er. 9 - 46 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Gain* 20 15 10 5 0 -5 -10 0.5 +25C +85C -40C Input & Output Return Loss * 0 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 47 RETURN LOSS (dB) -10 INPUT RETURN LOSS OUTPUT RETURN LOSS GAIN (dB) -20 -30 -40 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation* 0 REVERSE ISOLATION (dB) Output IP3* 40 -10 IP3 (dBm) 35 -20 30 -30 25 +25C +85C -40C -40 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 20 1.4 1.6 1.8 2 2.2 2.4 2.6 FREQUENCY (GHz) Output P1dB* 22 20 18 16 14 12 10 1.4 +25C +85C -40C Output Psat* 22 20 18 16 14 12 10 1.4 +25C +85C -40C P1dB (dBm) 1.6 1.8 2 2.2 2.4 2.6 Psat (dBm) 1.6 1.8 2 2.2 2.4 2.6 FREQUENCY (GHz) FREQUENCY (GHz) * Measurements shown are of both channels with 1.5 - 2.5 GHz 90° splitter/combiners on input & output (see application circuit for balanced operation). F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Absolute Maximum Ratings 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFIN)(Vcc = +4.2 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 29.58 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc 100 mA +17 dBm 150 °C 1.92 W 33.8 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC469MS8G HMC469MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H469 XXXX H469 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 9 - 48 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Pin Descriptions Pin Number Function Description Interface Schematic 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 49 1 RFIN1 This pin is DC coupled. An off chip DC blocking capacitor is required. 8 RFOUT1 RF output and DC Bias (Vcc1) for the output stage. 2, 3, 6, 7 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 4 RFIN2 This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT2 RF output and DC Bias (Vcc2) for the output stage. Ground Paddle GND Ground paddle must be connected to RF/DC ground. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Application Circuit for Balanced Operation 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 13 Ω 1/8 W 6V 27 Ω 1/4 W 8V 51 Ω 1/2 W 10V 82 Ω 1/2 W 12V 110 Ω 1W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1, L2 C4, C5, C9, C10 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 9 - 50 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 51 List of Materials for Evaluation PCB 109164 [1] Item J1 - J4 J5 - J8 L1, L2 C1, C8 C2, C7 C3, C6 C4, C5, C9, C10 R1, R2 U1 PCB [2] Description PCB Mount SMA Connector DC Pins Inductor, 0402 Pkg. 2.2 μF Capacitor, Tantalum 1000 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. Capacitor, 0402 Pkg. Resistor, 2010 Pkg. HMC469MS8G / HMC469MS8GE 109162 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com