478SC70E

HMC478SC70 / 478SC70E v00.0607 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features P1dB Output Power: +17 dBm Gain: 23 dB Output IP3: +31 dBm Cascadable 50 Ohm I/Os Single Supply: +5V to +8V Industry Standard SC70 Package 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC478SC70(E) is an ideal for: • Cellular / PCS / 3G • WiBro / WiMAX / 4G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram General Description The HMC478SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +17 dBm output power. The HMC478SC70(E) offers 23 dB of gain with a +31 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 5V, Rbias= 18 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 4 GHz DC - 3.0 GHz 3.0 - 4.0 GHz DC - 3.0 GHz 3.0 - 4.0 GHz DC - 4 GHz 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 3.0 GHz 3.0 - 4.0 GHz 13 11 9 Min. 20 16 13 11 Typ. 24 20 17 15 0.015 15 17 15 13 20 16 15 12 31 28 25 2.5 2.8 62 82 0.02 Max. Units dB dB dB dB dB/ °C dB dB dB dB dB dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) 9 - 96 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478SC70 / 478SC70E v00.0607 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Broadband Gain & Return Loss 30 20 RESPONSE (dB) 10 0 -10 -20 -30 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 30 25 20 15 10 5 0 0 1 2 3 4 5 FREQUENCY (GHz) +25C +85C -40C 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 97 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 FREQUENCY (GHz) +25C +85C -40C S21 S11 S22 Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 10 GAIN (dB) NOISE FIGURE (dB) 8 +25C +85C -40C 6 4 2 0 0 1 2 3 4 5 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478SC70 / 478SC70E v00.0607 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT P1dB vs. Temperature 24 20 16 12 8 4 0 0 1 2 3 4 5 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 24 20 16 12 8 4 0 0 1 2 3 4 5 FREQUENCY (GHz) +25C +85C -40C P1dB (dBm) Output IP3 vs. Temperature 35 Gain, Power & Output IP3 vs. Supply Voltage for Rs = 18 Ohms @ 850 MHz 34 32 30 28 26 24 22 20 18 16 14 12 10 8 4.75 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 30 IP3 (dBm) 25 +25C +85C -40C 20 Psat (dBm) 15 Gain P1dB Psat IP3 10 0 1 2 3 4 5 FREQUENCY (GHz) 5 Vs (Vdc) 5.25 Icc vs. Vcc Over Temperature for Fixed Vs= 5V, RBIAS= 18 Ohms 80 75 70 Icc (mA) 65 60 55 50 45 40 3.60 -40C +25C +85C 3.70 3.80 3.90 Vcc (V) 4.00 4.10 4.20 9 - 98 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478SC70 / 478SC70E v00.0607 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFIN)(Vcc = +2.4 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 9 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +6 Vdc 100 mA +5 dBm 150 °C 0.583 W 111.5 °C/W -65 to +150 °C -40 to +85 °C Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 99 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC478SC70 HMC478SC70E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking 478 478 [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478SC70 / 478SC70E v00.0607 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number 1, 2, 4, 5 Function GND Description These pins must be connected to RF/DC ground. Interface Schematic 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 6 RFOUT RF output and DC Bias (Vcc) for the output stage. Application Circuit Recommended Bias Resistor Values for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 18 Ω 1/8 W 6V 35 Ω 1/4 W 8V 67 Ω 1/2 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 9 - 100 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478SC70 / 478SC70E v00.0607 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 101 List of Materials for Evaluation PCB 118039 [1] Item J1 - J2 J3 - J4 C1 - C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum 18 Ohm Resistor, 1210 Pkg. 18 nH Inductor, 0603 Pkg. HMC478SC70(E) 117360 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com