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480ST89E

480ST89E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    480ST89E - InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
480ST89E 数据手册
HMC480ST89 / 480ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Typical Applications Features P1dB Output Power: +19 dBm to 2.5 GHz Gain: 19 dB @ 1 GHz 16 dB @ 2 GHz +34 dBm Output IP3 Single Supply: +6V to +8V Industry Standard SOT89 Package Included in the HMC-DK001 Designer’s Kits 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT The HMC480ST89 / HMC480ST89E is an ideal RF/IF gain block & LO or PA driver for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram General Description The HMC480ST89 & HMC480ST89E are InGaP HBT Gain Block MMIC SMT amplifiers covering DC to 5 GHz and packaged in an industry standard SOT89. The amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications. The HMC480ST89(E) offers 19 dB of gain with a +34 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply. The HMC480ST89(E) InGaP gain blocks offer excellent output IP3 and flat +19 to +20dBm output power performance through 5 GHz compared to equivalent SiGe based products. Electrical Specifi cations, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.5 GHz 3.5 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.5 GHz 3.5 - 5.0 GHz DC - 4 GHz 4.0 - 5.0 GHz Min. 17 14 12 10 8 Typ. 19 17 15 13 11 0.008 17 10 17 10 20 20 18.5 17.5 16 34 33 32 30 3.25 4.0 82 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation 0.016 Output Power for 1 dB Compression (P1dB) 16 15.5 14.5 13 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 8 - 122 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC480ST89 / 480ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 0 -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 123 5 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) -5 -5 -10 -10 -15 +25 C +85 C -40 C -15 +25 C +85 C -40 C -20 -20 -25 0 1 2 3 4 5 6 FREQUENCY (GHz) -25 0 1 2 3 4 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) Noise Figure vs. Temperature 10 9 -5 8 NOISE FIGURE (dB) +25 C +85 C -40 C 7 6 5 4 3 2 1 +25 C +85 C -40 C -10 -15 -20 -25 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 0 1 2 3 4 5 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC480ST89 / 480ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz P1dB vs. Temperature Psat vs. Temperature 24 22 20 18 Psat (dBm) 16 14 12 10 8 6 4 +25 C +85 C -40 C 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT P1dB (dBm) 24 22 20 18 16 14 12 10 8 6 4 0 1 2 3 4 5 FREQUENCY (GHz) +25 C +85 C -40 C 0 1 2 3 4 5 FREQUENCY (GHz) Output IP3 vs. Temperature 40 38 36 34 OIP3 (dBm) 32 30 28 26 24 22 20 0 1 2 3 4 5 FREQUENCY (GHz) +25 C +85 C -40 C Gain, Power & OIP3 vs. Supply Voltage @ 850 MHz, Rbias= 39 Ohms GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 32 28 24 20 16 12 8 4 0 7.6 8 Vs (Vdc) 8.4 Gain P1dB Psat OIP3 Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 39 Ohms 90 88 86 84 Icc (mA) 82 80 78 76 74 72 70 4.6 4.7 4.8 Vcc (Vdc) 4.9 5 -40 C +25 C +85 C 8 - 124 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC480ST89 / 480ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vcc = +5 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 8.25 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc +11 dBm 150 °C 0.536 W 122 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 125 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC480ST89 HMC480ST89E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H480 XXXX H480 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC480ST89 / 480ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Pin Descriptions 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/ DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 82 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 12 Ω 1/8 W 8V 39 Ω 1/4 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 8 - 126 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC480ST89 / 480ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Evaluation PCB 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 127 List of Materials for Evaluation PCB 108371 [1] Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC480ST89 / HMC480ST89E 108370 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
480ST89E
1. 物料型号: - HMC480ST89:InGaP HBT Gain Block MMIC放大器,使用低应力注塑塑料封装,Sn/Pb焊料。 - HMC480ST89E:符合RoHS标准的InGaP HBT Gain Block MMIC放大器,使用100%亚光Sn镀层,低应力注塑塑料封装。

2. 器件简介: - HMC480ST89/HMC480ST89E是InGaP HBT Gain Block MMIC SMT放大器,覆盖DC至5GHz,采用行业标准的SOT89封装。该放大器可以用作级联的50欧姆RF/IF增益阶段,以及LO或PA驱动器,输出功率高达+20dBm P1dB,适用于蜂窝/3G、FWA、CATV、微波无线电和测试设备应用。

3. 引脚分配: - 1号引脚(RFIN):射频输入,需要外部DC阻断电容器。 - 2号和4号引脚(GND):接地引脚,必须与RF/DC地连接。 - 3号引脚(RFOUT):射频输出以及输出级的DC偏置(Vcc)。

4. 参数特性: - P1dB输出功率:+19 dBm至2.5 GHz。 - 增益:1 GHz时为19 dB,2 GHz时为16 dB。 - 输出IP3:+34 dBm。 - 单电源供电:+6V至+8V。

5. 功能详解: - HMC480ST89(E)提供19 dB的增益,在1 GHz时输出IP3为+34 dBm,仅需82 mA的单正供电。 - HMC480ST89(E) InGaP增益块在5 GHz以内提供了出色的输出IP3和平坦的+19至+20 dBm输出功率性能。

6. 应用信息: - 适用于蜂窝/PCS/3G、固定无线和WLAN、CATV、电缆调制解调器和DBS、微波无线电和测试设备。

7. 封装信息: - 封装类型为SOT89,包含在HMC-DK001设计师套件中。 - HMC480ST89的封装体材料为低应力注塑塑料,HMC480ST89E为符合RoHS标准的低应力注塑塑料。 - 引脚镀层为100%亚光锡。
480ST89E 价格&库存

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