484MS8GE

HMC484MS8G / 484MS8GE Typical Applications • wireless infrastructure the hMc484MS8G / hMc484MS8Ge is ideal for: • iSM/cellular Portables/handsets • Automotive telematics • Mobile Radio • test equipment Functional Diagram ED U IN NT T O SC DUC DI RO P v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz Features high RF Power handling:> +40 dBm high third Order intercept: > +70 dBm Single Positive Supply: +3 to +10 Vdc Low insertion Loss: 0.4 to 0.6 dB Ultra Small MSOP8G Package: 14.8 mm2 included in the hMc-DK005 Designer’s Kit e ot R N d General Description men com w r Ne o ed f s sign De 11 SwitcheS - SPDt t/R - SMt the hMc484MS8G & hMc484MS8Ge are lowcost SPDt switches in 8-lead MSOPG packages for use in transmit-receive applications which require very low distortion at high input signal power levels, through 10 watts (+40 dBm). the device can control signals from Dc to 3.0 Ghz. the design provides exceptional intermodulation performance; > +70 dBm third order intercept at +5 volt bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +10 Vdc at very low Dc current with control inputs compatible with cMOS and most ttL logic families. Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System Parameter Frequency Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz Dc - 3.0 Ghz Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 Ghz 32 37 40 26 Min. typ. 0.4 0.6 0.8 0.9 30 24 20 17 13 32 36 39 35.5 40 >40 72 70 Max. 0.6 0.8 1.1 1.3 Units dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm insertion Loss isolation Return Loss (On State) input Power for 0.1dB compression input Power for 1dB compression input third Order intercept (two-tone input power = +30 dBm each tone) Switching characteristics 0.5 - 3.0 Ghz 0.5 - 1.0 Ghz 0.5 - 3.0 Ghz tRiSe, tFALL (10/90% RF) tON, tOFF (50% ctL to 10/90% RF) Dc - 3.0 Ghz 15 40 ns ns 11 - 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Insertion Loss vs. Temperature 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 0 0.5 ED U IN NT T O SC DUC DI RO P v04.0608 HMC484MS8G / 484MS8GE GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz Isolation 0 -10 ISOLATION (dB) -20 +25 C +85 C -40 C -30 -40 1 1.5 2 2.5 FREQUENCY (GHz) N 0 -0.5 INSERTION LOSS (dB) e ot R 3 d men com 3.5 -50 w r Ne o ed f 0 0.5 1 s sign De RF1 RF2 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 Insertion Loss vs. Bias Voltage (Vdd) Isolation vs. Bias Voltage (Vdd) 0 11 SwitcheS - SPDt t/R - SMt 11 - 2 -10 ISOLATION (dB) +3 Volts +5 Volts +8 Volts +10 Volts -1 +3 Volts +5 Volts +8 Volts +10 Volts -20 -1.5 -2 -30 -2.5 -3 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 -40 -50 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 RFC RF1, RF2 RF1 to RF2 Isolation 0 -10 ISOLATION (dB) -20 -30 ALL OFF RF1 ON RF2 ON -40 -50 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC484MS8G / 484MS8GE Input P0.1dB vs. Vdd 50 45 P0.1dB (dBm) 40 35 30 25 0 0.5 ED U IN NT T O SC DUC DI RO P v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz Input P1dB @ Vdd = +5 Volts 45 +3 Volts +5 Volts +8 Volts 40 P1dB (dBm) 35 30 1 1.5 2 2.5 FREQUENCY (GHz) 11 SwitcheS - SPDt t/R - SMt INSERTION LOSS (dB) 2nd & 3rd Harmonics @ 900 MHz, Vdd = +3 Volts 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 10 15 20 25 INPUT POWER (dBm) 30 INSERTION LOSS F2 F3 N e ot R 3 d men com 3.5 25 w r Ne o ed f 0 0.5 1 s sign De +25 C +85 C -40 C 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 2nd & 3rd Harmonics @ 900 MHz, Vdd = +5 Volts 0 -10 -20 -40 -50 -60 -70 -80 -90 -100 -110 -120 35 INSERTION LOSS (dB) -30 HARMONICS (dBc) 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 10 15 20 25 30 INPUT POWER (dBm) 35 INSERTION LOSS F2 F3 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 40 HARMONICS (dBc) 2nd & 3rd Harmonics @ 900 MHz, Vdd = +8 Volts 0 -0.2 -0.4 INSERTION LOSS (dB) -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 10 15 20 25 30 INPUT POWER (dBm) 35 INSERTION LOSS F2 F3 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 40 HARMONICS (dBc) Contact HMC Applications Group for input third order & input compression data from DC - 0.5 GHz. 11 - 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC484MS8G / 484MS8GE Input IP3 @ Vdd = +3 Volts 50 45 40 35 30 25 0 0.5 ED U IN NT T O SC DUC DI RO P v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz Input IP3 @ Vdd = +5 Volts 80 75 70 65 60 55 50 +25 C +85 C -40 C 1 1.5 2 2.5 FREQUENCY (GHz) N Input IP3 @ Vdd = +8 Volts 80 75 70 IP3 (dBm) 65 60 55 50 0 0.5 1 e ot R 3 d men com 3.5 w r Ne o ed f 0 0.5 1 s sign De +25 C +85 C -40 C IP3 (dBm) IP3 (dBm) 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 Input IP3 @ Vdd = +10 Volts 80 75 70 IP3 (dBm) 65 60 55 50 +25 C +85 C -40 C 11 SwitcheS - SPDt t/R - SMt 11 - 4 +25 C +85 C -40 C 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 Input IP3 vs. Input Power @ 900 MHz 80 Input IP3 vs. Input Power @ 1900 MHz 80 70 70 IP3 (dBm) 50 +3 Volts +5 Volts +8 Volts +10 Volts IP3 (dBm) 60 60 50 +3 Volts +5 Volts +8 Volts +10 Volts 40 40 30 27 28 29 30 31 32 TWO TONE INPUT POWER (dBm) (EACH TONE) 33 30 27 28 29 30 31 32 TWO TONE INPUT POWER (dBm) (EACH TONE) 33 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC484MS8G / 484MS8GE Bias Voltage & Current Vdd (Vdc) +3 +5 +8 +10 Control Voltages State Low high ED U IN NT T O SC DUC DI RO P v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz Absolute Maximum Ratings RF input Power (Vctl = 0V/+8V) (0.5 - 3 Ghz) Supply Voltage Range (Vdd) (Vctl = 0V) typical idd (µA) 0.5 10 +40 dBm (t = +85 °c) +13 Vdc 50 75 control Voltage Range (A & B) hot Switch Power Level (Vdd = +8V) channel temperature Bias condition 0 to +0.2 Vdc @ 10 µA typical Vdd ± 0.2 Vdc @ 10 µA typical 11 SwitcheS - SPDt t/R - SMt Truth Table control input (Vctl) A high Low Low B Low high Low e ot R N d men com continuous Pdiss (t = 85 °c) (derate 25 mw/°c above 85 °c) thermal Resistance w r Ne o ed f s sign De 39 dBm 150 °c 1.6 w 40 °c/w -65 to +150 °c -40 to +85 °c class 1A Vdd - 13 Vdc to Vdd + 0.7 Vdc Storage temperature Operating temperature eSD Sensitivity (hBM) Signal Path State RFc to RF1 Off On Off RFc to RF2 On Off Off Note: DC blocking capacitors are required at ports RFC, RF1 and RF2. Their value will determine the lowest transmission frequency. eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG PRecAUtiONS Typical 0.5 to 3.0 GHz Compression vs. Bias Voltage (Vdd) Bias Vdd (Volts) +3 +5 +8 +10 input Power for 0.1 dB compression (dBm) 32 36 39 >40 input Power for 1.0 dB compression (dBm) 35.5 40 >40 >40 11 - 5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC484MS8G / 484MS8GE Outline Drawing ED U IN NT T O SC DUC DI RO P v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz e ot R N d men com w r Ne o ed f s sign De NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.15mm PeR SiDe. 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.25mm PeR SiDe. 5. ALL GROUND LeADS AND GROUND PADDLe MUSt Be SOLDeReD tO PcB RF GROUND. 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS] 11 SwitcheS - SPDt t/R - SMt 11 - 6 Package Information Part Number hMc484MS8G hMc484MS8Ge Package Body Material Low Stress injection Molded Plastic RohS-compliant Low Stress injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] h484 XXXX h484 XXXX [2] [1] Max peak reflow temperature of 235 °c [2] Max peak reflow temperature of 260 °c [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC484MS8G / 484MS8GE Pin Descriptions Pin Number 1 2 3, 5, 8 4 ED U IN NT T O SC DUC DI RO P v04.0608 Function A Description See truth table and control voltage table. B See truth table and control voltage table. RFc, RF1, RF2 this pin is Dc coupled and matched to 50 Ohms. Blocking capacitors are required. Vdd GND GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz interface Schematic 6, 7 N e ot R d men com Supply Voltage w r Ne o ed f s sign De Package bottom must also be connected to PcB RF ground. 11 SwitcheS - SPDt t/R - SMt Typical Application Circuit Notes: 1. Set logic gate and switch Vdd = +3V to +10V and use hct series logic to provide a ttL driver interface. 2. control inputs A/B can be driven directly with cMOS logic (hc) with Vdd of +3 to +10 Volts applied to the cMOS logic gates and to pin 4 of the RF switch. 3. Dc Blocking capacitors are required for each RF port as shown. capacitor value determines lowest frequency of operation. 4. highest RF signal power capability is achieved with V set to +10V. the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 11 - 7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC484MS8G / 484MS8GE Evaluation Circuit Board ED U IN NT T O SC DUC DI RO P v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz e ot R N d men com w r Ne o ed f s sign De 11 SwitcheS - SPDt t/R - SMt 11 - 8 List of Materials for Evaluation PCB 104124 [1] item J1 - J3 J4 - J7 c1 - c3 c4 R1 - R3 U1 PcB [2] Description PcB Mount SMA RF connector Dc Pin 100 pF capacitor, 0402 Pkg. 10 KpF capacitor, 0603 Pkg. 100 Ohm Resistor, 0402 Pkg. hMc484MS8G / hMc484MS8Ge t/R Switch 104122 PcB the circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 Ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. the evaluation circuit board shown above is available from hittite Microwave corporation upon request. [1] Reference this number when ordering complete evaluation PcB [2] circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com