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486LP5E

486LP5E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    486LP5E - SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
486LP5E 数据手册
HMC486LP5 / 486LP5E v02.0110 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz Typical Applications The HMC486LP5(E) is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment and Sensors Features Saturated Power: +33 dBm @ 20% PAE Output IP3: +40 dBm Gain: 22 dB Supply: +7V @ 1300 mA 50 Ohm Matched Input/Output 32 Lead 5x5mm SMT Package: 25mm2 11 LINEAR & POWER AMPLIFIERS - SMT • Military End-Use Functional Diagram General Description The HMC486LP5(E) is a high dynamic range GaAs pHEMT MMIC 2 Watt Power Amplifier housed in a leadless 5x5 mm surface mount packages. Operating from 7 to 9 GHz, the amplifier provides 22 dB of gain, +33 dBm of saturated power and 20% PAE from a +7V supply voltage. Output IP3 is +40 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC486LP5(E) eliminate the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3, 4, 5 = +7V, Idd = 1300 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +7V, Vgg = -0.3V Typ.) 29 18 Min. Typ. 7-8 21 0.05 12 8 32 33 41 7.0 1300 28 0.07 19 Max. Min. Typ. 8-9 22 0.05 17 5 31 32 38 7.5 1300 0.07 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg between -2 to 0V to achieve Idd = 1300 mA typical. 11 - 256 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486LP5 / 486LP5E v02.0110 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz Broadband Gain and Return Loss 25 Gain vs. Temperature 30 25 20 15 10 +25 C +85 C -40 C 15 RESPONSE (dB) GAIN (dB) S21 S11 S22 5 -5 11 9 9.5 10 -15 5 0 4 5 6 7 8 9 10 11 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) FREQUENCY (GHz) -25 Input Return Loss vs. Temperature 0 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -2 RETURN LOSS (dB) -10 -4 -15 -6 -20 -8 -25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) -10 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) P1dB vs. Temperature 34 Psat vs. Temperature 34 32 P1dB (dBm) Psat (dBm) 32 30 +25 C +85 C -40 C 30 +25 C +85 C -40 C 28 28 26 26 24 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 24 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 257 LINEAR & POWER AMPLIFIERS - SMT HMC486LP5 / 486LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz Output IP3 vs. Temperature 44 Power Compression @ 8 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 30 24 18 12 6 0 -10 Pout Gain PAE 40 IP3 (dBm) 36 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 32 28 24 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) -6 -2 2 6 10 14 18 INPUT POWER (dBm) Gain, Power & OIP3 vs. Supply Voltage @ 8 GHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 42 40 38 36 34 32 30 28 26 24 22 20 6.5 7 Vdd Supply Voltage (Vdc) 7.5 Gain P1dB Psat IP3 Gain, Power & OIP3 vs. Supply Current @ 8 GHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 42 40 38 36 34 32 30 28 26 24 22 20 700 800 900 1000 1100 1200 1300 Gain P1dB Psat IP3 Idd Supply Current (mA) Noise Figure vs. Temperature 14 12 NOISE FIGURE (dB) 10 8 6 4 2 0 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C 11 - 258 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486LP5 / 486LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 1330 1300 1285 +6.5 +7.0 Power Dissipation* 10.5 POWER DISSIPATION (W) 10 9.5 9 8.5 8 7.5 7 -10 8 GHz Max Pdiss @ +85C +7.5 Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 1300 mA at +7V. Absolute Maximum Ratings Drain Bias Voltage (Vdd1, 2, 3, 4, 5) Gate Bias Voltage (Vgg) -6 -2 2 6 10 14 18 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 259 +8V -2 to 0V +20 dBm 150 °C 10 W 6.5 °C/W -65 to +150 °C -40 to +85 °C RF Input Power (RFIN)(Vdd = +7V) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 154 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) INPUT POWER (dBm) * Please refer to “Thermal Management for Surface Mount Components” application note at www.hittite.com/ ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Storage Temperature Operating Temperature Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC486LP5 HMC486LP5E Package Body Material Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H486 XXXX H486 XXXX Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486LP5 / 486LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz Pin Descriptions Pin Number 1-3, 5-8, 10-12, 14, 15, 17-20, 22-24, 26, 27, 29-31 4 Function N/C Description No connection required. These pins may be connected to RF/DC ground without affecting performance. This pin is AC coupled and matched to 50 Ohms. Interface Schematic RFIN 11 9 Vgg LINEAR & POWER AMPLIFIERS - SMT Gate control for amplifier. Adjust to achieve Idd of 1300 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 32, 28, 25, 13, 16 Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. Package Bottom GND Ground: Backside of package has exposed metal ground slug that must be connected to ground through a short path. Vias under the device are required Application Circuit Component C1 C2 Value 100 pF 2.2 μF 11 - 260 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486LP5 / 486LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7 - 9 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 261 List of Materials for Evaluation PCB 108190 [1] Item J1, J2 J3, J4 C1 - C6 C7 - C12 U1 PCB [2] Description SRI PC Mount SMA Connector 2mm DC Header 100 pF Capacitor, 0402 Pkg. 2.2μF Capacitor, Tantalum HMC486LP5(E) Amplifier 108188 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. Copper filled vias under the device are recommended. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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