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487LP5E

487LP5E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    487LP5E - SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
487LP5E 数据手册
HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Typical Applications The HMC487LP5 / HMC487LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios Features Saturated Power: +33 dBm @ 20% PAE Output IP3: +36 dBm Gain: 20 dB +7V @ 1300 mA Supply 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package 11 LINEAR & POWER AMPLIFIERS - SMT • Test Equipment and Sensors • Military End-Use Functional Diagram General Description The HMC487LP5 & HMC487LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifiers housed in leadless 5 x 5 mm surface mount packages. Operating from 9 to 12 GHz, the amplifier provides 20 dB of gain, +33 dBm of saturated power and 20% PAE from a +7V supply voltage. Output IP3 is +36 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC487LP5(E) eliminate the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3, 4, 5 = +7V, Idd = 1300 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +7V, Vgg = -0.3V Typ.) 29 17 Min. Typ. 9 - 11 20 0.05 7 7 32 33 36 9 1300 28 0.07 19 Max. Min. Typ. 11 - 12 22 0.05 15 15 31 32 35 8 1300 0.07 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg between -2 to 0V to achieve Idd = 1300 mA typical. 11 - 270 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Broadband Gain and Return Loss 25 Gain vs. Temperature 30 25 20 GAIN (dB) 15 10 +25 C +85 C -40 C 15 RESPONSE (dB) S21 S11 S22 5 -5 11 12 13 -15 5 0 6 7 8 9 10 11 12 13 14 15 8 9 10 11 FREQUENCY (GHz) FREQUENCY (GHz) -25 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -10 -15 +25 C +85 C -40 C -15 -20 +25 C +85 C -40 C -25 8 9 10 11 12 13 FREQUENCY (GHz) -20 8 9 10 11 12 13 FREQUENCY (GHz) P1dB vs. Temperature 36 34 32 30 28 26 24 8 9 10 11 12 13 FREQUENCY (GHz) +25 C +85 C -40 C Psat vs. Temperature 36 34 32 30 28 26 24 8 9 10 11 12 13 FREQUENCY (GHz) +25 C +85 C -40 C P1dB (dBm) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Psat (dBm) 11 - 271 LINEAR & POWER AMPLIFIERS - SMT HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Output IP3 vs. Temperature 42 38 34 IP3 (dBm) 30 26 22 18 14 +25 C +85 C -40 C Power Compression @ 10.5 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 30 24 18 12 6 0 -10 Pout Gain PAE 11 LINEAR & POWER AMPLIFIERS - SMT 10 8 9 10 11 12 13 FREQUENCY (GHz) -6 -2 2 6 10 14 18 INPUT POWER (dBm) Gain Power and OIP3 vs. Supply Voltage @10.5 GHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 38 36 34 32 30 28 26 24 22 20 18 6.5 7 Vdd Supply Voltage (Vdc) 7.5 Gain P1dB Psat IP3 Gain, Power and OIP3 vs. Supply Current @ 10.5 GHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 42 38 34 30 26 22 18 800 Gain P1dB Psat IP3 900 1000 1100 1200 1300 Idd Supply Current (mA) Noise Figure vs. Temperature 15 Reverse Isolation vs. Temperature 0 -10 12 NOISE FIGURE (dB) ISOLATION (dB) -20 -30 -40 -50 3 +25 C +85 C -40 C 9 +25 C +85 C -40 C 6 -60 -70 0 8 9 10 11 12 13 FREQUENCY (GHz) 8 9 10 11 12 13 FREQUENCY (GHz) 11 - 272 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) 1330 1300 1285 +6.5 +7.0 Power Dissipation* 11 POWER DISSIPATION (W) 10 9 8 7 6 5 -10 -8 11 GHz Max Pdiss @ +85C +7.5 Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 1300 mA at +7.0V. Absolute Maximum Ratings Drain Bias Voltage (Vdd1, 2, 3, 4, 5) Gate Bias Voltage (Vgg) -6 -4 -2 0 2 4 6 8 10 12 14 16 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 273 +8 Vdc -2.0 to 0 Vdc +20 dBm 150 °C 10 W 6.5 °C/W -65 to +150 °C -40 to +85 °C RF Input Power (RFIN)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 154 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) INPUT POWER (dBm) * Refer to “Thermal Management for Surface Mount Components” application note herein. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Storage Temperature Operating Temperature Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC487LP5 HMC487LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H487 XXXX H487 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Pin Descriptions Pin Number 1 - 3, 5 - 8, 10 - 12, 14, 15, 17 - 20, 22 24, 26, 27, 29 - 31 4 Function N/C Description No connection required. These pins may be connected to RF/DC ground without affecting performance. This pin is AC coupled and matched to 50 Ohms. Interface Schematic RFIN 11 9 Vgg LINEAR & POWER AMPLIFIERS - SMT Gate control for amplifier. Adjust to achieve Idd of 1300 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 32, 28, 25, 13, 16 Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. GND Ground: Backside of package has exposed metal ground slug that must be connected to ground through a short path. Vias under the device are required Application Circuit Component C1 C2 Value 100 pF 2.2 μF 11 - 274 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 275 List of Materials for Evaluation PCB 108190 [1] Item J1, J2 J3, J4 C1 - C6 C7 - C12 U1 PCB [2] Description SRI PC Mount SMA Connector 2mm DC Header 100 pF capacitor, 0402 pkg. 2.2μF Capacitor, Tantalum HMC487LP5 / HMC487LP5E Amplifier 108188 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. Copper filled vias under the device are recommended. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
487LP5E
### 物料型号 - HMC487LP5 和 HMC487LP5E:这是两款高动态范围GaAs PHEMT MMIC 2瓦特功率放大器的型号,分别采用不同的封装材料和符合不同的环保标准。

### 器件简介 - HMC487LP5和HMC487LP5E是工作在9至12GHz频段的功率放大器,提供20dB的增益和+33dBm的饱和功率,以及20%的功率附加效率。这些放大器采用无引线5x5mm表面贴装封装。

### 引脚分配 - 1-3,5-8,10-12,14,15,17-20,22-24,26,27,29-31:无连接(N/C),这些引脚可以不连接,或连接到RF/DC地,不影响性能。 - 4:RFIN,射频输入,交流耦合,匹配到50欧姆。 - 9:Vgg,放大器的门控控制,调整以实现1300mA的工作电流。 - 21:RFOUT,射频输出,交流耦合,匹配到50欧姆。 - 32,28,25,13,16:Vdd1,Vdd2,Vdd3,Vdd4,Vdd5,放大器的电源电压。 - GND:地,封装背面有暴露的金属地焊盘,必须通过短路径连接到地。

### 参数特性 - 饱和功率:+33dBm @ 20% PAE - 输出IP3:+36dBm - 增益:20dB - 电源电压:+7V @ 1300mA - 输入/输出匹配:50欧姆 - 封装:25mm²无引线表面贴装封装

### 功能详解 - HMC487LP5(E)采用表面贴装制造技术,无需焊线,简化了制造过程。RF输入/输出端是直流阻断和匹配的,方便使用。

### 应用信息 - 该功率放大器适用于点对点无线电、点对多点无线电、测试设备和传感器、军事终端用途。

### 封装信息 - HMC487LP5:低应力注塑塑料封装,Sn/Pb焊料,MSL1等级。 - HMC487LP5E:符合RoHS标准的低应力注塑塑料封装,100%亚光Sn,MSL1等级。
487LP5E 价格&库存

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