617LP3E

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Features Noise figure: 0.5 dB Gain: 16 dB output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3mm QfN package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC617lp3(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • Access points Functional Diagram General Description The HmC617lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 550 and 1200 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 16 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC617lp3(e) shares the same package and pinout with the HmC618lp3(e) 1.7 - 2.2 GHz lNA. The HmC617lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. The HmC617lp3(e) offers improved noise figure versus the previously released HmC372lp3(e) and the HmC376lp3(e). Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms* parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 14 13 Vdd = +3 Vdc min. Typ. 698 - 960 16 0.003 0.5 28 12 16 17 31 30 45 12.5 0.8 11 max. min. Typ. 550 - 1200 15 0.003 0.5 22 14 16 16.5 30 30 45 18.5 1.1 13.5 max. min. Typ. 698 - 960 16 0.005 0.55 22 12 21 21 37 88 115 16.5 0.85 11.5 Vdd = +5 Vdc max. min. Typ. 550 - 1200 16 0.005 0.6 17 15 20 20.5 37 88 115 1.1 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA * rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Gain vs. Temperature [1] 22 20 18 GAIN (dB) +25C +85C - 40C Broadband Gain & Return Loss [1] [2] 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 -30 0.2 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 2 S11 S22 Vdd=5V Vdd=3V S21 7 Amplifiers - low Noise - smT 7-2 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Gain vs. Temperature [2] 22 20 Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) +25C +85C - 40C 18 GAIN (dB) 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) -10 -15 -20 -25 -30 +25 C +85 C - 40 C 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) Reverse Isolation vs. Temperature [1] 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 +25 C +85 C -40 C -10 -15 -20 -25 -30 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C - 40 C 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz P1dB vs. Temperature [1] [2] 24 22 20 P1dB (dBm) 18 Vdd=3V Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] [2] [4] 1.2 1 NOISE FIGURE (dB) 0.8 +85C Vdd=5V Vdd=3V 0.6 0.4 0.2 0 0.5 0.6 0.7 +25 C 16 14 +25 C +85 C - 40 C -40C 12 10 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Psat vs. Temperature [1] [2] 24 22 20 Psat (dBm) 18 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C -40 C Vdd=3V Vdd=5V Output IP3 vs. Temperature [1] [2] 48 44 40 IP3 (dBm) 36 32 28 Vdd=3V Vdd=5V +25 C +85 C - 40 C 24 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 Output IP3 and Idd vs. Supply Voltage @ 900 MHz [3] 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 Idd (mA) [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K [4] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Idd (mA) HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Power Compression @ 700 MHz [2] 50 40 30 20 10 0 -10 Pout Gain PAE Power Compression @ 700 MHz [1] 50 Pout (dBm), GAIN (dB), PAE (%) 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pout Gain PAE 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) Pout (dBm), GAIN (dB), PAE (%) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 900 MHz [1] 50 Pout (dBm), GAIN (dB), PAE (%) 40 30 20 10 0 -10 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pout Gain PAE Power Compression @ 900 MHz [2] 50 Pout (dBm), GAIN (dB), PAE (%) 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pout Gain PAE INPUT POWER (dBm) INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] 24 GAIN P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz [3] 1.2 1 0.8 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 24 GAIN P1dB 1 GAIN (dB) & P1dB (dBm) 22 0.8 20 0.6 0.4 16 Noise Figure 20 0.6 18 0.4 0.2 0 5.5 16 Noise Figure 0.2 2.7 3.1 3.5 3.9 4.3 4.7 5.1 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Gain, Noise Figure & Rbias @ 700 MHz 19 18 17 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 1000 Rbias(Ohms) 10000 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 700 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 1000 Rbias (Ohms) 10000 Vdd=3V Vdd=5V GAIN (dB) 16 15 14 13 500 Vdd=5V Vdd=3V Output IP3 vs. Rbias @ 900 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 1000 Rbias (Ohms) 10000 Vdd=3V Vdd=5V Gain, Noise Figure & Rbias @ 900 MHz 17 1 16 Vdd=5V Vdd=3V 0.8 NOISE FIGURE (dB) GAIN (dB) 15 0.6 14 0.4 13 0.2 12 500 1000 Rbias(Ohms) 0 10000 Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) rbias min max recommended 2.7k 3V 1K [1] open Circuit 3.92k 4.7k 10k 820 5V 0 open Circuit 2k 3.92k 10k idd (mA) 24 30 33 40 65 78 88 90 [1] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v00.0807 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Typical Supply Current vs. Vdd (Rbias = 3.92k) Vdd (V) 2.7 3.0 idd (mA) 18 30 41 77 88 97 Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 8.33 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +6V +10 dBm 150 °C 0.54 w 120 °C/w -65 to +150 °C -40 to +85 °C 7 Amplifiers - low Noise - smT 7-6 3.3 4.5 5.0 5.5 Note: Amplifier will operate over full voltage ranges shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC617lp3 HmC617lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 617 XXXX 617 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Amplifiers - low Noise - smT Pin Descriptions pin Number 1, 3 - 5, 7, 9, 10, 12 - 14, 16 function N/C Description No connection required. These pins may be connected to rf/ DC ground without affecting performance. interface schematic 2 rfiN This pin is matched to 50 ohms. 6 GND This pin and ground paddle must be connected to rf./DC ground. 11 rfoUT This pin is matched to 50 ohms. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage. Choke inductor and bypass capacitors are required. see application circuit. Application Circuit 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 118357 item J1, J2 J3, J4 C1 C2 C3 l1 l2 r1 U1 pCB [2] Description pCB mount smA rf Connector DC pin 10nf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 0.47µf Capacitor, 0603 pkg. 18 nH, inductor, 0603 pkg. 15 nH, inductor, 0402 pkg. 3.92K ohm resistor, 0402 pkg. HmC617lp3(e) Amplifier 112580 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8