618LP3E

HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Features Noise Figure: 0.75 dB Gain: 19 dB OIP3: 36 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9 mm2 5 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC618LP3(E) is ideal for: • Cellular/3G and LTE/WiMAX/4G • BTS & Infrastructure • Repeaters and Femto Cells • Public Safety Radios Functional Diagram General Description The HMC618LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3(E) shares the same package and pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA. The HMC618LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3(E) is an ideal replacement for the HMC375LP3(E). Electrical Specifi cations, TA = +25° C, Rbias = 10K Vdd = 3 Vdc Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 12 15 Typ. 1700 - 2000 18 0.009 0.90 17 13 15 16 28 47 65 13.5 1.2 12.5 Max. Min. Typ. 2000 - 2200 15.8 0.009 0.9 19 11 15 16 28 47 65 16.5 1.2 16 Max. Min. Typ. 1700 - 2000 19 0.008 0.75 18 12.5 20 20.5 35 117 155 18 1.1 13.5 Max. Min. Typ. Max. MHz dB dB/°C 1.15 dB dB dB dBm dBm dBm 155 mA 2000 - 2200 17 0.008 0.85 19.5 9.5 20 21 36 117 Vdd = 5 Vdc Units * Rbias resistor sets current, see application circuit herein 5 - 256 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss [1] [2] 25 S21 Gain vs. Temperature [1] 24 22 20 5 LOW NOISE AMPLIFIERS - SMT 5 - 257 15 RESPONSE (dB) 5 S22 Vdd=5V Vdd=3V GAIN (dB) 18 16 +25C +85C - 40C -5 -15 S11 14 12 -25 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.7 1.8 FREQUENCY (GHz) 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Gain vs. Temperature [2] 22 20 18 GAIN (dB) 16 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C - 40C Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) +25 C +85 C - 40 C -10 -15 -20 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output Return Loss vs. Temperature [1] 0 +25 C +85 C - 40 C Reverse Isolation vs. Temperature [1] 0 -5 -10 ISOLATION (dB) -15 -20 -25 -30 +25 C +85 C - 40 C -5 RETURN LOSS (dB) -10 -15 -20 -35 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 LOW NOISE AMPLIFIERS - SMT Noise Figure vs Temperature [1] [2] [4] 1.6 1.4 NOISE FIGURE (dB) 1.2 +85C Vdd=5V Vdd=3V Output P1dB vs. Temperature [1] [2] 24 22 20 P1dB (dBm) 18 16 14 12 10 +25 C +85 C - 40 C Vdd=3V Vdd=5V 1 0.8 +25 C 0.6 0.4 0.2 0 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40C 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Psat vs. Temperature [1] [2] 24 22 Vdd=5V Output IP3 vs. Temperature [1] [2] 40 38 36 IP3 (dBm) 34 32 30 28 26 24 Vdd=3V +25 C +85 C - 40 C Vdd=5V 20 Psat (dBm) 18 Vdd=3V 16 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C -40 C 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [3] 38 36 34 IP3 (dBm) 32 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Idd IP3 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [3] 140 120 100 80 60 40 20 0 5.5 IP3 (dBm) Idd (mA) 38 36 34 32 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 IP3 140 120 100 80 Idd Idd (mA) 60 40 20 0 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K [3] Rbias = 10K [4] Measurement reference plane shown on evaluation PCB drawing. 5 - 258 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Power Compression @ 1750 MHz [1] 30 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1750 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 5 LOW NOISE AMPLIFIERS - SMT NOISE FIGURE (dB) 20 20 10 10 0 Pout Gain PAE 0 Pout Gain PAE -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 2100 MHz [1] 30 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2100 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 20 20 10 10 0 Pout Gain PAE 0 Pout Gain PAE -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1750 GHz [3] 24 22 GAIN (dB) & P1dB (dBm) 20 18 16 14 12 2.7 GAIN P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 2100 GHz [3] 1.2 1 0.8 0.6 0.4 0.2 0 5.5 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 24 22 20 18 16 14 12 2.7 GAIN P1dB Noise Figure 1.2 1 0.8 0.6 0.4 0.2 0 5.5 Noise Figure 3.1 3.5 3.9 4.3 4.7 5.1 3.1 3.5 3.9 4.3 4.7 5.1 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K [3] Rbias = 10K For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 259 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 LOW NOISE AMPLIFIERS - SMT Output IP3 vs. Rbias @ 1750 MHz 36 34 32 IP3 (dBm) 30 28 26 24 22 100 1000 Rbias (Ohms) 10000 Vdd=5V Vdd=3V Gain, Noise Figure & Rbias @ 1750 MHz 22 21 20 GAIN (dB) 19 18 17 16 15 14 100 1000 Rbias(Ohms) Vdd=5V Vdd=3V 1.6 1.4 1.2 NOISE FIGURE (dB) 1 0.8 0.6 0.4 0.2 0 10000 Output IP3 vs. Rbias @ 2100 MHz 38 36 34 Gain, Noise Figure & Rbias @ 2100 MHz 20 19 18 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 1000 Rbias(Ohms) 10000 IP3 (dBm) 32 30 28 26 24 100 1000 Vdd=5V Vdd=3V GAIN (dB) 17 16 15 14 Vdd=5V Vdd=3V 10000 100 Rbias (Ohms) 5 - 260 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Rbias Vdd1 = Vdd2 (V) Min (Ohms) Max (Ohms) R1 (Ohms) 1k 3V 1K [1] Open Circuit 1.5k 10k 120 5V 0 Open Circuit 470 10k 28 34 47 71 89 117 Idd1 + Idd2 (mA) 5 LOW NOISE AMPLIFIERS - SMT 5 - 261 [1] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFIN) (Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 9.68 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6V +10 dBm 150 °C 0.63 W 103.4 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 10K) Vdd (Vdc) 2.7 3.0 3.3 4.5 5.0 5.5 Idd (mA) 35 47 58 101 117 133 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 LOW NOISE AMPLIFIERS - SMT Outline Drawing Part Number HMC618LP3 HMC618LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 618 XXXX 618 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 - 262 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions Pin Number 1, 3 - 5, 7, 9, 12, 14, 16 Function N/C Description No connection required. These pins may be connected to RF/ DC ground without affecting performance. Interface Schematic 5 This pin is DC coupled and matched to 50 Ohms. 2 RFIN 6, 10 GND This pin and ground paddle must be connected to RC/DC ground. 8 RES This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT This pin is matched to 50 Ohms. 13, 15 Vdd2, Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 263 LOW NOISE AMPLIFIERS - SMT HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Material for Evaluation PCB 117905 [1] Item J1, J2 J3 - J5 C2, C4 C3, C5 L1 L3 C6 C1 R1 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 1000 pF Capacitor, 0603 pkg. 0.47 μF Capacitor, Tantalum 15nH, Inductor, 0603 pkg 6.8nH, Inductor, 0603 pkg 220pF Capacitor, 0402 pkg 10nF Capacitor, 0402 pkg 10k Ohm resistor, 0402 pkg HMC618LP3(E) Amplifier 120586 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. 5 - 264 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Notes: 5 LOW NOISE AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 265