619LP5E

HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Typical Applications The HMC619LP5(E) wideband PA is ideal for: • Telecom Infrastructure Features P1dB Output Power: +27 dBm Gain: 11 dB Output IP3: +37 dBm Supply Voltage: +12V @ 300 mA 50 Ohm Matched Input/Output 32 Lead 5x5mm Lead SMT Package: 25mm2 6 LINEAR & POWER AMPLIFIERS - SMT • Microwave Radio & VSAT • Military & Space • Test Instrumentation • Fiber Optics Functional Diagram General Description The HMC619LP5(E) is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 10 GHz. The amplifier provides 11 dB of gain, +37 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring 300 mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC - 10 GHz making the HMC619LP5(E) ideal for EW, ECM, Radar and test equipment applications. The HMC619LP5(E) amplifier I/Os are internally matched to 50 ohms. Electrical Specifi cations, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= +12V, Vgg1= -0.8V Typ.) 10 Min. Typ. DC - 2.0 12 ±0.5 0.016 11 16 28 29 41 5 300 25 9 Max. Min. Typ. 2.0 - 8.0 11 ±0.25 0.02 12.5 16 27 28 37 5 300 23 8 Max. Min. Typ. 8.0 - 10.0 10.5 ±0.5 0.03 17 12 25 25.5 32 7 300 Max. Units GHz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. 6 - 324 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Gain & Return Loss 20 Gain vs. Temperature 18 15 12 GAIN (dB) 9 6 10 RESPONSE (dB) S21 S11 S22 0 6 +25C +85C -40C -10 -20 3 0 0 2 4 6 8 10 12 0 2 4 -30 FREQUENCY (GHz) 6 8 10 12 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 +25C +85C -40C -20 -25 0 2 4 6 8 10 12 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 FREQUENCY (GHz) Noise Figure vs. Temperature 15 +25C +85C -40C NOISE FIGURE (dB) ISOLATION (dB) +25C +85C -40C 12 9 6 3 0 0 2 4 6 8 10 12 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 325 LINEAR & POWER AMPLIFIERS - SMT HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz P1dB vs. Temperature 32 30 Psat vs. Temperature 32 30 28 26 24 +25C +85C -40C P1dB (dBm) 26 24 22 20 0 2 4 6 8 10 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT Psat (dBm) 6 28 22 20 0 2 +25C +85C -40C 4 6 8 10 FREQUENCY (GHz) Output IP3 vs. Temperature 45 Output IP3 vs. Output Power @ 5GHz 50 40 45 IP3 (dBm) 35 IP3 (dBm) 11.5V 12.0V 12.5V 40 30 +25C +85C -40C 35 25 20 0 2 4 6 8 10 12 FREQUENCY (GHz) 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 OUTPUT POWER (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 35 30 25 20 15 10 11.5 Gain P1dB Psat IP3 12 Vdd Supply Voltage (V) 12.5 6 - 326 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Power Compression @ 1 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 4 8 12 16 20 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 5 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 Pout Gain PAE 6 LINEAR & POWER AMPLIFIERS - SMT 6 - 327 12 8 4 0 0 4 8 12 16 20 INPUT POWER (dBm) Power Compression @ 10 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 4 8 12 16 20 INPUT POWER (dBm) Pout Gain PAE Power Dissipation 10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 -10 Max Pdis @ 85C 2 GHz 6 GHz -5 0 5 10 15 20 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +12 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 65 mW/°C above 85 °C) Thermal Resistance (channel to package bottom) Storage Temperature Operating Temperature 13 Vdc -2.5 to 0 Vdc +4V to +6V 27 dBm 150 °C 4.2 W 15.3 °C/W -65 to 150 °C -40 to 85 °C Typical Supply Current vs. Vdd Vdd (V) 11.5 12.0 12.5 Idd (mA) 299 300 301 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Outline Drawing 6 LINEAR & POWER AMPLIFIERS - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC619LP5 HMC619LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H619 XXXX H619 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 6 - 328 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Pin Descriptions Pin Number 1, 3, 4, 6-12, 14, 17, 18, 19, 20, 22-28, 31, 32 Function Description Interface Schematic N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 6 LINEAR & POWER AMPLIFIERS - SMT 6 - 329 2 Vgg2 Gate Control 2 for amplifier. +5V should be applied to Vgg2 for nominal operation. 5 RFIN This pad is DC coupled and matched to 50 Ohms. 13 Vgg1 Gate Control 1 for amplifier. 15 ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. 16 ACG3 21 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 29 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 30 ACG1 Ground Paddle GND Ground paddle must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Application Circuit 6 LINEAR & POWER AMPLIFIERS - SMT NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 6 - 330 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Evaluation PCB 6 LINEAR & POWER AMPLIFIERS - SMT 6 - 331 List of Materials for Evaluation PCB 108347 [1] Item J1 - J2 J3 - J4 C1, C2 C3 - C6 C7 - C9 U1 PCB [2] Description SRI K Connector 2mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC619LP5 / HMC619LP5E 109765 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com