637LP5E

HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Features p1dB output power: +29 dBm Gain: 13 dB output ip3: +40 dBm 50 ohm matched input/output 32 lead 5x5mm lead smT package: 25mm2 Typical Applications The HmC637lp5(e) wideband pA is ideal for: • Telecom infrastructure • microwave radio & VsAT • military & space 9 Amplifiers - lineAr & power - smT • Test instrumentation • fiber optics Functional Diagram General Description The HmC637lp5(e) is a GaAs mmiC mesfeT Distributed power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +40 dBm output ip3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HmC637lp5(e) ideal for ew, eCm, radar and test equipment applications. The HmC637lp5(e) amplifier i/os are internally matched to 50 ohms and the 5x5 mm Qfn package is compatible with high volume smT assembly equipment. Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA* parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) 320 27 12 min. Typ. DC - 6 13 ±0.75 0.025 12 15 29 29.5 40 5 400 480 max. Units GHz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain vs. Temperature 18 16 Gain & Return Loss 20 10 RESPONSE (dB) S21 S11 S22 14 12 GAIN (dB) 10 8 6 +25C +85C -40C 0 -10 -20 4 2 9 6 8 -30 0 2 4 FREQUENCY (GHz) 6 8 0 0 2 4 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 FREQUENCY (GHz) 6 8 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 FREQUENCY (GHz) 6 8 +25C +85C -40C Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 0 2 4 FREQUENCY (GHz) 6 8 +25C +85C -40C Noise Figure vs. Temperature 12 +25C +85C -40C 10 NOISE FIGURE (dB) 8 6 4 2 0 2 4 FREQUENCY (GHz) 6 8 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Psat vs. Temperature 32 30 28 26 24 22 20 +25C +85C -40C P1dB vs. Temperature 32 30 28 26 24 22 +25C +85C -40C P1dB (dBm) 9 Amplifiers - lineAr & power - smT 20 0 2 4 FREQUENCY (GHz) 6 8 Psat (dBm) 0 2 4 FREQUENCY (GHz) 6 8 Output IP3 vs. Temperature 60 55 50 IP3 (dBm) 45 40 35 30 25 20 0 2 4 FREQUENCY (GHz) 6 8 +25C +85C -40C Gain, Power & Output IP3 vs. Supply Voltage @ 3 GHz, Fixed Vgg Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 45 40 35 30 25 20 15 10 11.5 Gain P1dB Psat IP3 12 Vdd (V) 12.5 Gain & Return Loss vs. Frequency, Log Scale 20 Output IP3 vs. Temperature, Log Scale 60 55 10 RESPONSE (dB) S21 S11 S22 50 IP3 (dBm) 45 40 35 30 25 +25C +85C -40C 0 -10 -20 -30 0.01 0.1 1 10 20 0.01 0.1 1 10 FREQUENCY (GHz) FREQUENCY (GHz) 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Supply Current vs. Vdd Vdd (V) 11.5 12.0 12.5 idd (mA) 373 400 425 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) rf input power (rfin)(Vdd = +12 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 87 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +14 Vdc -3 to 0 Vdc +4 to +7 Vdc +25 dBm 150 °C 5.7 w 11.5 °C/w -65 to 150 °C -40 to 85 °C eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions 9 Amplifiers - lineAr & power - smT 9-4 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Outline Drawing 9 Amplifiers - lineAr & power - smT noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inCHes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Package Information part number HmC637lp5 HmC637lp5e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] H637 XXXX H637 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Pin Descriptions pin number 1, 3, 4, 6 - 12, 14, 17, 18, 19, 20, 22 - 28, 31, 32 function Description no connection. These pins may be connected to rf ground. performance will not be affected. interface schematic n/C 2 Vgg2 Gate Control 2 for amplifier. +5V should be applied to Vgg2 for nominal operation. Attach bypass capacitor per application circuit herein. 9 Amplifiers - lineAr & power - smT 9-6 5 rfin This pad is DC coupled and matched to 50 ohms. 13 Vgg1 Gate Control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC Amplifier Biasing procedure” Application note. 15 ACG4 low frequency termination. Attach bypass capacitor per application circuit herein. 16 ACG3 rf output for amplifier. Connect the DC bias (Vdd) network to provide drain current (idd). see application circuit herein. low frequency termination. Attach bypass capacitor per application circuit herein. 21 rfoUT & Vdd 29 30 Ground paddle ACG2 ACG1 GnD Ground paddle must be connected to rf/DC ground. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Application Circuit 9 Amplifiers - lineAr & power - smT NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. NOTE 2: Power Up Bias Sequence A) Set Vgg1 to -2V B) Set Vdd to +12V C) Set Vgg2 to +5V D) Adjust Vgg1 to achieve Idd for 400 mA Power Down Sequence A) Remove Vgg2 Bias B) Remove Vdd Bias C) Remove Vgg1 Bias 9-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Evaluation PCB 9 Amplifiers - lineAr & power - smT 9-8 List of Materials for Evaluation PCB 108347 item J1 - J2 J3 - J4 C1, C2 C3 - C6 C7 - C9 U1 pCB [2] Description sri smA Connector 2mm molex Header 100 pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 4.7 µf Capacitor, Tantalum HmC637lp5 / HmC637lp5e 109765 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com