686LP4E

HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Features High input iP3: +34 dBm 7.5 dB Conversion Loss @ 0 dBm LO Optimized to High side LO input for 0.7 - 1.1 GHz rF Band Optimized to Low side LO input for 1.4 - 1.5 GHz rF Band Adjustable supply Current 24 Lead 4x4mm sMT Package: 16mm2 Typical Applications The HMC686LP4(e) is ideal for: • Cellular/3G & LTe/WiMAx/4G 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT • Basestations & repeaters • GsM, CDMA & OFDM • Transmitters and receivers Functional Diagram General Description The HMC686LP4(e) is a high dynamic range passive MMiC mixer with integrated LO amplifier in a 4x4 sMT QFN package covering 0.7 to 1.1 GHz. excellent input iP3 performance of +34 dBm for down conversion is provided for 3G & 4G GsM/CDMA applications at an LO drive of 0 dBm. With an input 1 dB compression of +25 dBm, the rF port will accept a wide range of input signal levels. Conversion loss is 7.5 dB typical. The DC to 500 MHz iF frequency response will satisfy GsM/CDMA transmit or receive frequency plans. The HMC686LP4(e) is optimized to high side LO frequency plans for 0.7 - 1.1 GHz rF Band and is pin for pin compatible with the HMC684LP4(e) which is a 0.7 - 1.0 GHz converter optimized for low side LO. The HMC686LP4(e) is optimized to low side LO frequency plans for 1.4 - 1.5 GHz rF LTe band applications. Electrical Specifications, TA = +25° C, LO = 0 dBm, Vcc1, 2, 3, = +5V Nominal supply Parameter Frequency range, rF Frequency range, LO LO injection Type Frequency range, iF Conversion Loss Noise Figure (ssB) LO to rF isolation LO to iF isolation rF to iF isolation iP3 (input) 1 dB Compression (input) LO Drive input Level (Typical) Gate Bias Voltage G_BiAs supply Current icc Total 18 30 27 7.5 7.5 24 41 36 34 25 -3 to +3 3.5 105 125 9.5 Min. icc = 105 mA [1] Typ. Max. 0.7 - 1.1 0.85 - 1.25 High side DC to 500 7.5 7.5 26 41 36 32.5 24.5 -3 to +3 3.5 80 7.5 7.5 28 42 35 31.5 23.5 -3 to +3 3.5 60 20 28 27 icc = 80 mA [1] Typ. icc = 60 mA [1] Typ. Min. icc = 120mA [2] Typ. 1.4 - 1.5 1.1 - 1.5 Low side 50 - 250 8 8 36 39 38 32 25 -3 to +3 2.5 120 140 10 MHz dB dB dB dB dB dBm dBm dBm V mA Max. Units GHz GHz [1] Unless otherwise noted all measurements performed for 0.7 - 1.1 GHz rF band as downconverter with high side LO & iF = 150 MHz, icc = 105 mA, G_Bias = 3.5 V [2] Unless otherwise noted all measurements performed for 1.4 - 1.5 GHz rF LTe band as downconverter with low side LO & iF = 140 MHz 10 - 1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Isolation 0 -10 RF/IF LO/RF LO/IF 0.7 - 1.1 GHz RF Band Performance Conversion Gain vs. Temperature 0 CONVERSION GAIN (dB) -5 ISOLATION (dB) -20 -30 -40 -50 -60 0.6 -10 10 1 1.1 1.2 -15 +25 C +85 C -40 C -20 0.6 0.7 0.8 0.9 1 1.1 1.2 0.7 0.8 0.9 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 Return Loss 0 -5 RETURN LOSS (dB) RF LO -5 -10 -15 -20 -25 -30 0.4 -10 -15 -3 dBm 0 dBm +3 dBm -20 0.6 0.7 0.8 0.9 1 1.1 1.2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) FREQUENCY (GHz) IF Bandwidth (LO = 1.1 GHz) 0 -5 Input P1dB vs. Temperature 30 25 RESPONSE (dB) P1dB (dBm) -10 -15 -20 15 -25 -30 0 0.1 0.2 0.3 0.4 0.5 IF FREQUENCY (GHz) IF Return Loss Conversion Gain 20 +25 C +85 C -40 C 10 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10 - 2 Mixers - siNGLe & DOUBLe BALANCeD - sMT CONVERSION GAIN (dB) HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Input IP3 vs. Temperature [1] 40 0.7 - 1.1 GHz RF Band Performance Input IP3 vs. LO Drive [1] 40 IP3 (dBm) 30 IP3 (dBm) -3 dBm 0 dBm +3 dBm 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT 35 35 30 25 25 +25 C +85 C -40 C 20 0.6 0.7 0.8 0.9 1 1.1 1.2 20 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) -2RF +2LO Response vs. Temperature [2] 65 -2RF+2LO RESPONSE (dBc) -2RF +2LO Response vs. LO Drive [2] 65 -2RF+2LO RESPONSE (dBc) 60 60 55 +25 C +85 C -40 C 55 50 50 -3 dBm 0 dBm +3 dBm 45 45 40 0.6 0.7 0.8 0.9 1 1.1 1.2 40 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) -3RF +3LO Response vs. Temperature [2] 90 -3RF+3LO RESPONSE (dBc) 85 80 75 70 65 60 0.6 +25 C +85 C -40 C -3RF +3LO Response vs. LO Drive [2] 90 -3RF+3LO RESPONSE (dBc) 85 80 75 70 65 60 0.6 -3 dBm 0 dBm +3 dBm 0.7 0.8 0.9 1 1.1 1.2 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) [1] Two-tone input power = +9 dBm each tone, 1 MHz spacing. [2] referenced to rF input power at 0 dBm 10 - 3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Input IP3 vs. G_Bias Voltage [1] 32 31 Vcc1, 2, 3 = 3.3 V R9 = 330 Ohms Icc = 64 mA 0.7 - 1.1 GHz RF Band Performance for Low Power Consumption Conversion Gain vs. G_Bias Voltage -6 CONVERSION GAIN (dB) -7 IP3 (dBm) 30 29 28 27 26 25 0.6 -8 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V 10 0.8 0.9 1 1.1 1.2 -9 Vcc1, 2, 3 = 3.3 V R9 = 330 Ohms Icc = 64 mA -10 0.6 0.7 0.8 0.9 1 1.1 1.2 0.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Conversion Gain vs. G_Bias Voltage -6 Input IP3 vs. G_Bias Voltage [1] 35 34 Vcc1, 2, 3 = 5.0 V R9 = 330 Ohms Icc = 110 mA -7 IP3 (dBm) 33 32 31 30 29 -8 Vcc1, 2, 3 = 5.0 V R9 = 330 Ohms Icc = 110 mA -9 2.0 V 2.5 V 3.0 V 3.5 V 4.0 V 2.0 V 2.5 V 3.0 V 3.5 V 4.0 V -10 0.6 0.7 0.8 0.9 1 1.1 1.2 28 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Conversion Gain vs. Icc -6 Vcc1, 2, 3 = 5.0 V G_Bias = 3.5 V Input IP3 vs. Icc [1] 35 CONVERSION GAIN (dB) -7 30 -8 110 mA 100 mA 90 mA 80 mA 70 mA 60 mA 25 Vcc1, 2, 3 = 5.0 V G_Bias = 3.5 V -9 110 mA 100 mA 90 mA 80 mA 70 mA 60 mA -10 0.6 0.7 0.8 0.9 1 1.1 1.2 20 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) [1] Two-tone input power = +9 dBm each tone, 1 MHz spacing F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10 - 4 Mixers - siNGLe & DOUBLe BALANCeD - sMT 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V CONVERSION GAIN (dB) IP3 (dBm) HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 0.7 - 1.1 GHz RF Band Performance for Low Power Consumption Conversion Gain vs. Temperature, Icc = 60 mA -6 Input IP3 vs. Temperature, Icc = 60 mA [1] 35 CONVERSION GAIN (dB) -8 Mixers - siNGLe & DOUBLe BALANCeD - sMT IP3 (dBm) 10 -7 30 25 -9 +25 C +85 C -40 C +25 C +85 C -40 C -10 0.6 0.7 0.8 0.9 1 1.1 1.2 20 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Icc vs. R9 130 120 Vcc1, 2, 3 = 5.0 V 110 Icc (mA) 100 90 80 70 60 50 250 300 350 400 450 500 550 600 650 700 750 R9 (Ohms) Typical Upconverter Performance Conversion Gain vs. LO Drive 0 Input IP3 vs. LO Drive [1] 40 CONVERSION GAIN (dB) -5 IP3 (dBm) -3 dBm 0 dBm +3 dBm 35 -10 30 -15 25 -3 dBm 0 dBm +3 dBm -20 0.6 0.7 0.8 0.9 1 1.1 1.2 20 0.6 0.7 0.8 0.9 1 1.1 1.2 RF FREQUENCY (GHz) RF FREQUENCY (GHz) [1] Two-tone input power = +9 dBm each tone, 1 MHz spacing 10 - 5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 0.7 - 1.1 GHz RF Band Performance for Narrowband High IP3 Upconverter Tune [1] Conversion Gain and IP3, G_BIAS = 1.5 [2][3] 50 +25C +85C -40C Conversion Gain and IP3, G_BIAS = 2.5 [2][3] 50 +25C +85C -40C 0 0 45 -2 45 -2 IP3 (dBm) IP3 (dBm) 40 -4 40 -4 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 6 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 35 -6 35 -6 30 -8 30 -8 25 0.85 0.9 0.95 1 RF FREQUENCY (GHz) -10 1.05 25 0.85 0.9 0.95 RF FREQUENCY (GHz) 1 -10 1.05 Conversion Gain and IP3, G_BIAS = 3.5 [2][3] 50 +25C +85C -40C IP3 vs G_BIAS, LO = 1060 MHz [2] 50 G_BIAS = 1.5V 2.5V 3.5V 0 45 -2 46 CONVERSION GAIN (dB) IP3 (dBm) 40 35 -6 IP3 (dBm) -4 42 38 30 -8 34 25 0.85 0.9 0.95 RF FREQUENCY(GHz) 1 -10 1.05 30 0.8 0.85 0.9 RF FREQUENCY (GHz) 0.95 1 IP3 vs Temperature, G_BIAS = 1.5V, LO = 1060 MHz [2] 50 +25C +85C -40C 46 IP3 (dBm) 42 38 34 30 0.8 0.85 0.9 RF FREQUENCY (GHz) 0.95 1 [1] see Narrowband High iP3 Upconverter Tune evaluation PCB and schematic. [2] Two-tone input power = +9 dBm each tone, 1 MHz spacing. [3] iF = 120 MHz F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 1.4 - 1.5 GHz RF LTE Band Performance [1] Conversion Gain vs. Temperature [2] -6 Isolation [2] 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 1.2 RF/IF LO/RF LO/IF CONVERSION GAIN (dB) 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT -7 -8 -9 -10 -11 -12 1.2 +25 C +85 C -40 C 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Conversion Gain vs. LO Drive [2] -6 -7 -8 -9 -10 -11 -12 1.2 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1.2 RF LO CONVERSION GAIN (dB) -3 dBm 0 dBm +3 dBm 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) FREQUENCY (MHz) IF Bandwidth (LO = 1.3 GHz) 0 -5 RESPONSE (dB) -10 Input P1dB vs. Temperature [2] 30 +25 C +85 C -40 C 28 P1dB (dBm) -15 -20 -25 -30 -35 0.05 IF Return Loss Conversion Gain 26 24 22 0.1 0.15 IF FREQUENCY (GHz) 0.2 0.25 20 1.2 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [2] G_Bias = +2.5V, iF = 140 MHz 10 - 7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 1.4 - 1.5 GHz RF LTE Band Performance [1] Input IP3 vs. LO Drive [2] [3] 35 34 33 IP3 (dBm) 32 31 30 29 28 1.2 -3 dBm 0 dBm +3 dBm Input IP3 vs. Temperature [2] [3] 35 34 33 IP3 (dBm) 32 31 30 29 28 1.2 +25 C +85 C -40 C 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 8 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) +2RF -2LO Response vs. Temperature [2] [4] 65 +2RF-2LO RESPONSE (dBc) +2RF -2LO Response vs. LO Drive [2] [4] 65 +2RF-2LO RESPONSE (dBc) 60 60 55 +25 C +85 C -40 C 55 50 50 -3 dBm 0 dBm +3 dBm 45 45 40 1.2 1.3 1.4 1.5 1.6 1.7 40 1.2 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) +3RF -3LO Response vs. Temperature [2] [4] 90 +3RF-3LO RESPONSE (dBc) 85 80 75 70 65 60 1.2 +3RF -3LO Response vs. LO Drive [2] [4] 90 +3RF-3LO RESPONSE (dBc) 85 80 75 70 65 60 1.2 -3 dBm 0 dBm +3 dBm +25 C +85 C -40 C 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [3] Two-tone input power = +9 dBm each tone, 1 MHz spacing [2] G_Bias = +2.5V, iF = 140 MHz [4] referenced to rF input Power at 0 dBm F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 1.4 - 1.5 GHz RF LTE Band Performance [1] Conversion Gain vs. G_Bias Voltage -6 Input IP3 vs. G_Bias Voltage [2] 35 34 33 IP3 (dBm) 32 31 30 29 28 1.2 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V IF = 140 MHz CONVERSION GAIN (dB) 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT -7 -8 -9 -10 -11 -12 1.2 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V IF = 140 MHz 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Conversion Gain vs. IF Frequency -6 -7 -8 G_Bias = 2.5 V Input IP3 vs. IF Frequency [2] 35 34 33 IP3 (dBm) 32 31 30 29 28 1.2 90 MHz 140 MHz 200 MHz G_Bias = 2.5 V CONVERSION GAIN (dB) -9 -10 -11 -12 1.2 90 MHz 140 MHz 200 MHz 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. Temperature [3] -6 -7 -8 -9 -10 -11 -12 1.2 +25 C +85 C -40 C Upconverter Performance Input IP3 vs. Temperature [2] [3] 35 34 33 IP3 (dBm) 32 31 30 29 28 27 1.2 +25 C +85 C -40 C CONVERSION GAIN (dB) 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [2] Two-tone input power = +9 dBm each tone, 1 MHz spacing [3] G_Bias = +2.5V, iF = 140 MHz 10 - 9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Upconverter Performance Input IP3 vs. LO Drive [2] [3] 35 34 33 IP3 (dBm) 32 -3 dBm 0 dBm +3 dBm 1.4 - 1.5 GHz RF LTE Band Performance [1] Upconverter Performance Conversion Gain vs. LO Drive [2] -6 -7 -8 -9 -10 -11 -12 1.2 -3 dBm 0 dBm +3 dBm CONVERSION GAIN (dB) 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 10 31 30 29 28 1.2 1.3 1.4 1.5 1.6 1.7 1.3 1.4 1.5 1.6 1.7 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Harmonics of LO [4] nLO spur @ rF Port LO Freq. (GHz) 0.75 0.85 0.95 1.05 1.15 1.25 1.35 1 28 25 23 23 26 33 39 2 40 34 29 28 23 19 18 3 40 60 32 36 38 44 39 4 39 33 31 26 34 34 38 MxN Spurious @ IF Port [4] nLO mrF 0 1 2 3 4 0 xx 26 52 80 98 1 41 0 50 66 97 2 17 28 50 87 98 3 31 17 62 71 97 4 40 46 58 87 98 rF Freq. = 0.9 GHz @ 0 dBm LO Freq. = 1.0 GHz @ 0 dBm All values in dBc below iF power level (-1rF + 1LO). LO = 0 dBm All values in dBc below input LO level measured at rF port Absolute Maximum Ratings rF / iF input (Vcc1,2,3 = +5V) LO Drive (Vcc1,2,3 = +5V) Vcc1,2,3 Channel Temperature Continuous Pdiss (T = 85°C) (derate 19 mW/°C above 85°C) Thermal resistance (channel to ground paddle) storage Temperature Operating Temperature +23 dBm +10 dBm +5.5V 125 °C 0.76 W 52 °C/W -65 to 150 °C -40 to +85 °C Typical Supply Current vs. Vcc Vcc1,2,3 (V) 4.75 5.00 5.25 icc Total (mA) 100 105 110 Product will operate over full voltage range shown above. [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [2] G_Bias = +2.5V, iF = 140 MHz [3] Two-tone input power = +9 dBm each tone, 1 MHz spacing [4] see 0.7 - 1.1 GHz rF Band evaluation PCB and schematic eLeCTrOsTATiC seNsiTiVe DeViCe OBserVe HANDLiNG PreCAUTiONs F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Outline Drawing 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT Package Information Part Number HMC686LP4 HMC686LP4e Package Body Material Low stress injection Molded Plastic roHs-compliant Low stress injection Molded Plastic NOTes: 1. PACKAGe BODY MATeriAL: LOW sTress iNJeCTiON MOLDeD PLAsTiC siLiCA AND siLiCON iMPreGNATeD. 2. LeAD AND GrOUND PADDLe MATeriAL: COPPer ALLOY. 3. LeAD AND GrOUND PADDLe PLATiNG: 100% MATTe TiN. 4. DiMeNsiONs Are iN iNCHes [MiLLiMeTers]. 5. LeAD sPACiNG TOLerANCe is NON-CUMULATiVe. 6. PAD BUrr LeNGTH sHALL Be 0.15mm MAx. PAD BUrr HeiGHT sHALL Be 0.25mm MAx. 7. PACKAGe WArP sHALL NOT exCeeD 0.05mm 8. ALL GrOUND LeADs AND GrOUND PADDLe MUsT Be sOLDereD TO PCB rF GrOUND. 9. reFer TO HiTTiTe APPLiCATiON NOTe FOr sUGGesTeD PCB LAND PATTerN. Lead Finish sn/Pb solder 100% matte sn MsL rating MsL1 MsL1 [1] Package Marking [3] H686 xxxx H686 xxxx [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number xxxx 10 - 11 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Pin Descriptions Pin Number 1, 6, 7, 11 - 14, 18, 20, 23 2, 5, 15, 17 Function N/C Description No connection. These pins may be connected to rF ground. Performance will not be affected. Package bottom must be connected to rF/DC ground. This pin is matched single-ended to 50 Ohms and DC shorted to ground through a balun. Center tap of secondary side of the internal rF balun. short to ground with zero ohms close to the package. interface schematic GND 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 12 3 rF 4 TAP 8, 10, 24 Vcc1, Vcc2, Vcc3 Power supply voltage. see application circuit for required external components. 9 LO_BiAs LO buffer current adjustment pin. Adjust the LO buffer current through the external resistor r9 shown in the application circuit (connect 330 Ohms for nominal operation). This adjustment allows for a trade-off between power dissipation and linearity performance of the converter. 16 LO This pin is matched single-ended to 50 Ohms and DC shorted to ground through a balun. 19 G_BiAs external bias. see application circuit for recommended external components. Apply +3.5V for nominal operation at 5V supply voltage. G_Bias can be set to between 0 and 5Vdc. The G_bias pin has an internal 15K ohm resistance to ground. This adjustment allows for a trade off between conversion loss and linearity performance of the converter (see figures CG, iP3 vs. G-Bias). 21, 22 iFN, iFP Differential iF input / output pins matched to differential 50 Ohms. For applications not requiring operation to DC an off chip DC blocking capacitor should be used. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Evaluation PCB - 0.7 - 1.1 GHz RF Band 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT List of Materials for Evaluation PCB 119936 [1] item J1 - J3 J4 - J7 C1, C19 C4 C7, C8 C10, C12, C16, C18 C11, C15, C17, C21 C20 r2 - r4 r5 r9 T1 U1 PCB [2] Description sMA Connector DC Pin 22 pF Capacitor, 0402 Pkg. 6.8 pF Capacitor, 0402 Pkg. 10 nF Capacitor, 0402 Pkg. 1 nF Capacitor, 0402 Pkg. 0.1 µF Capacitor, 0603 Pkg. 4.7 µF Case A, Tantalum 0 Ohm resistor, 0402 Pkg. 68 Ohm resistor, 0402 Pkg. 330 Ohm resistor, 0603 Pkg. 1:1 Transformer - Tyco MABACT0039 HMC686LP4(e) Downconverter 118162 evaluation PCB The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25r, Fr4 10 - 13 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Application Circuit - 0.7 - 1.1 GHz RF Band 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10 - 14 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Evaluation PCB - 0.7 - 1.1 GHz RF Band, Narrowband High IP3 Upconverter Tune 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT List of Materials for Evaluation PCB 122410 [1] item J1 - J3 J4 - J7 C1, C19 C2 C7, C8 C10, C12, C16, C18 C11, C15, C17, C21 C20 r1 r2 - r4 r5 r9 T1 U1 L1 PCB [2] Description sMA Connector DC Pin 22 pF Capacitor, 0402 Pkg. 4.7 pF Capacitor, 0402 Pkg. 10 nF Capacitor, 0402 Pkg. 1 nF Capacitor, 0402 Pkg. 0.1 µF Capacitor, 0603 Pkg. 4.7 µF Case A, Tantalum 0 Ohm resistor, 0402 Pkg. 0 Ohm resistor, 0402 Pkg. 68 Ohm resistor, 0402 Pkg. 330 Ohm resistor, 0603 Pkg. 1:1 Transformer - Tyco MABACT0039 HMC686LP4(e) Downconverter 5.6 nH ind, 0402 Pkg. 118162 evaluation PCB The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25r, Fr4 10 - 15 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Application Circuit - 0.7 - 1.1 GHz RF Band, Narrowband High IP3 Upconverter Tune 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10 - 16 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Evaluation PCB - 1.4 - 1.5 GHz RF LTE Band 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT List of Materials for Evaluation PCB 125658 [1] item J1 - J3 J4 - J7 C1, C19 C2 C4 C7, C8 C10, C12, C16, C18 C11, C15, C17, C21 C20 r2 - r4 r5 r9 T1 U1 L1 PCB [2] Description sMA Connector DC Pin 22 pF Capacitor, 0402 Pkg. 2.2 pF Capacitor, 0402 Pkg. 6.8 pF Capacitor, 0402 Pkg. 10 nF Capacitor, 0402 Pkg. 1 nF Capacitor, 0402 Pkg. 0.1 µF Capacitor, 0603 Pkg. 4.7 µF Case A, Tantalum 0 Ohm resistor, 0402 Pkg. 68 Ohm resistor, 0402 Pkg. 270 Ohm resistor, 0603 Pkg. 1:1 Transformer - Tyco MABACT0039 HMC686LP4(e) Downconverter 7.5 nH ind, 0402 Pkg. 118162 evaluation PCB The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25r, Fr4 10 - 17 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Application Circuit - 1.4 - 1.5 GHz RF LTE Band 10 Mixers - siNGLe & DOUBLe BALANCeD - sMT F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10 - 18