715LP3E

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Features Noise figure: 0.9 dB Gain: 19 dB output ip3: +33 dBm single supply: +3V to +5V 16 lead 3x3mm QfN package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC715lp3(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • Access points Functional Diagram General Description The HmC715lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 2.1 and 2.9 GHz. The amplifier has been optimized to provide 0.9 dB noise figure, 19 dB gain and +33 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC715lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. Electrical Specifications parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1] Vdd = +3V min. Typ. 2.1 - 2.9 14.5 18 0.01 0.9 11.5 14 10.5 14.5 16 28 47 65 12.5 1.2 15 max. min. Typ. 2.3 - 2.7 18 0.01 0.9 11 13.5 15 16.5 28.5 47 65 15 1.2 15.5 max. min. Typ. 2.1 - 2.9 19 0.01 0.9 11.5 12.5 19 20 33 95 126 16.5 1.2 16.5 Vdd = +5V max. min. Typ. 2.3 - 2.7 19 0.01 0.9 11 12 19.5 20.5 33.5 95 126 1.2 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA [1] rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Gain vs. Temperature [1] 26 24 22 GAIN (dB) Broadband Gain & Return Loss [1] [2] 30 24 18 RESPONSE (dB) 12 6 0 -6 -12 -18 -24 -30 0.5 1 1.5 5V 3V S11 S22 S21 7 Amplifiers - low Noise - smT 7-2 20 18 16 14 12 +25C +85C -40C 2 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 5 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Gain vs. Temperature [2] 26 24 22 GAIN (dB) 20 18 16 14 12 2 2.2 2.4 2.6 2.8 3 +25C +85C -40C Input Return Loss vs. Temperature [1] 0 RETURN LOSS (dB) -5 +25C +85C -40C -10 -15 -20 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 FREQUENCY (GHz) Output Return Loss vs. Temperature [1] 0 Reverse Isolation vs. Temperature [1] -20 -25 RETURN LOSS (dB) -5 ISOLATION (dB) +25C +85C -40C -30 -35 -40 -45 +25C +85C -40C -10 -15 -20 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 -50 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 [1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 47kΩ F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz P1dB vs. Temperature [1] [2] 23 21 Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] [2] [4] 1.8 1.5 NOISE FIGURE (dB) 1.2 0.9 0.6 0.3 0 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Vdd=5V Vdd=3V -40C +85C +25C 19 P1dB (dBm) 17 15 13 11 9 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Vdd=3V +25C +85C -40C Psat vs. Temperature [1] [2] 24 22 20 Psat (dBm) 18 16 14 12 Vdd=3V +25C +85C -40C Vdd=5V Output IP3 vs. Temperature [1] [2] 44 41 38 IP3 (dBm) 35 32 29 26 Vdd=3V Vdd=5V +25C +85C -40C 23 20 3 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 10 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 Output IP3 and Supply Current vs. Supply Voltage @ 2300 MHz [3] 36 34 32 IP3 (dBm) 30 28 26 24 22 20 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) Idd IP3 Output IP3 and Supply Current vs. Supply Voltage @ 2700 MHz [3] 125 110 95 IP3 (dBm) 80 Idd (mA) 65 50 35 20 5 5.5 38 36 34 32 30 28 26 24 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) Idd IP3 125 110 95 80 Idd (mA) 65 50 35 20 5 5.5 [1] Vdd = 5V, rbias = 2k Ω [2] Vdd = 3V, rbias = 47kΩ [3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V [4] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Power Compression @ 2300 MHz [2] 25 20 15 10 5 0 -5 -10 -20 Pout Gain PAE Power Compression @ 2300 MHz [1] 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -10 -20 -18 Pout Gain PAE 7 Amplifiers - low Noise - smT 1.3 1.2 NOISE FIGURE (dB) 1.1 1 0.9 0.8 Pout (dBm), Gain (dB), PAE (%) -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 0 2 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 Power Compression @ 2700 MHz [1] 35 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 10 5 0 -5 -10 -20 -17 -14 -11 -8 -5 -2 INPUT POWER (dBm) 1 Pout Gain PAE Power Compression @ 2700 MHz [2] 30 Pout (dBm), Gain (dB), PAE (%) 25 20 15 10 5 0 -5 -10 -20 -15 -10 -5 INPUT POWER (dBm) Pout Gain PAE 4 7 0 5 Gain, Power & Noise Figure vs. Supply Voltage @ 2300 MHz [3] 24 22 GAIN (dB) & P1dB (dBm) 20 18 16 14 12 10 8 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) NF P1dB Gain Gain, Power & Noise Figure vs. Supply Voltage @ 2700 MHz [3] 1.4 1.3 1.2 NOISE FIGURE (dB) 1.1 1 0.9 0.8 0.7 0.6 5.5 12 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) GAIN (dB) & P1dB (dBm) 20 P1dB Gain 22 18 16 14 NF 5.5 [1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 47kΩ [3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Gain, Noise Figure & Rbias @ 2300 MHz 22 20 18 1.1 1.05 NOISE FIGURE (dB) 1 Vdd=3V Vdd=5V 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 2300 MHz 35 32 IP3 (dBm) GAIN (dB) 29 16 14 0.95 0.9 0.85 0.8 26 23 Vdd=3V Vdd=5V 12 10 100 1000 Rbias (Ohms) 10000 20 100 1000 10000 Rbias (Ohms) 100000 100000 Output IP3 vs. Rbias @ 2700 MHz 38 Gain, Noise Figure & Rbias @ 2700 MHz 20 18 16 GAIN (dB) 14 12 1.4 1.3 NOISE FIGURE (dB) 1.2 1.1 1 0.9 0.8 1000 Rbias (Ohms) 10000 100000 35 Vdd=3V Vdd=5V IP3 (dBm) 32 29 26 10 8 100 Vdd=3V Vdd=5V 23 100 1000 10000 Rbias (Ohms) 100000 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values Vdd (V) rbias (ohms) min max recommended 2K 3V 1.8k [1] open Circuit 5.6K 47K 270 5V 0 open Circuit 820 2K [1] with Vdd= 3V and rbias < 1.8k ohms may result in the part becoming conditionally stable which is not recommended. idd (mA) 28 40 47 61 81 95 7 Amplifiers - low Noise - smT 7-6 Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 11.1 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature esD sensitivity (HBm) +5.5V +10 dBm 150 °C 0.72 w 90 °C/w -65 to +150 °C -40 to +85 °C Class 1A eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Typical Supply Current vs. Supply Voltage (Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 idd (mA) 35 47 57 80 95 110 Note: Amplifier will operate over full voltage ranges shown above. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC715lp3 HmC715lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 715 XXXX 715 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Pin Descriptions pin Number 1, 3 - 7, 9, 10, 12 - 14, 16 function N/C Description No connection required. These pins may be connected to rf/DC ground without affecting performance. interface schematic 7 This pin is DC coupled. see application circuit for off chip component. 2 rfiN 11 rfoUT This pin is DC coupled. see application circuit for off chip component. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply voltage. Bypass capacitors are required. see application circuit. GND Ground paddle must be connected to rf/DC ground. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 Amplifiers - low Noise - smT HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Amplifiers - low Noise - smT 7-9 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 122492 item J1, J2 J3, J4 C1 C2 C3 C4 C5 r1 U1 pCB [2] Description pCB mount smA rf Connector DC pin 100pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 0.47µf Capacitor, 0603 pkg. 68pf Capacitor, 0402 pkg. 3.3pf Capacitor, 0402 pkg. 2kΩ resistor, 0402 pkg. HmC715lp3(e) Amplifier 122490 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. or Arlon 25r F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10