717LP3E

HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Features Noise figure: 1.1 dB Gain: 16.5 dB output ip3: +31.5 dBm single supply: +3V to +5V 16 lead 3x3mm QfN package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC717lp3(e) is ideal for: • fixed wireless and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • Access points Functional Diagram General Description The HmC717lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for fixed wireless and lTe/wimAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC717lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. Electrical Specifications parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2] Vdd = +3V min. Typ. 4.8 - 6.0 12 14.3 0.01 1.25 13 13 12 14 15 25.5 31 40 15 1.5 13.5 max. min. Vdd = +5V Typ. 4.8 - 6.0 16.5 0.01 1.1 13 18 18.5 19.5 31.5 73 100 1.4 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) Total supply Current (idd) [1] rbias resistor sets current, see application circuit herein [2] Vdd = Vdd1 = Vdd2 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Gain vs. Temperature [1] 25 Broadband Gain & Return Loss [1][2] 25 20 15 RESPONSE (dB) 10 0 -5 -10 -15 -20 -25 -30 1 2 3 4 5 6 7 FREQUENCY (GHz) 8 9 10 S11 S21 7 Amplifiers - low Noise - smT 7-2 21 GAIN (dB) 5 17 13 +25C +85C -40C 9 Vdd=5V Vdd=3V S22 5 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Gain vs. Temperature [2] 25 Input Return Loss vs. Temperature [1] 0 21 RETURN LOSS (dB) -5 +25C +85C -40C GAIN (dB) 17 -10 13 +25C +85C -40C 9 -15 5 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 -20 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Output Return Loss vs. Temperature [1] 0 +25C +85C -40C Reverse Isolation vs. Temperature [1] -20 -25 ISOLATION (dB) -30 -35 -40 -45 -50 4.5 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 [1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 20kΩ F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz P1dB vs. Temperature [1] [2] 24 22 20 P1dB (dBm) 18 16 14 12 10 Vdd=3V +25C +85C -40C Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] [2] [4] 2.1 +85C 1.8 NOISE FIGURE (dB) 1.5 1.2 0.9 0.6 +25C -40C 0.3 0 4.5 Vdd=5V Vdd=3V 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 8 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Psat vs. Temperature [1] [2] 24 22 20 Psat (dBm) Vdd=5V Output IP3 vs. Temperature [1] [2] 40 37 34 IP3 (dBm) 31 28 25 22 19 6.5 16 4.5 Vdd=3V +25C +85C -40C Vdd=5V 18 16 14 12 10 8 4.5 Vdd=3V +25C +85C -40C 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Output IP3 and Total Supply Current vs. Supply Voltage @ 4800 MHz [3] 36 34 32 IP3 (dBm) 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) Idd IP3 Output IP3 and Total Supply Current vs. Supply Voltage @ 5900 MHz [3] 36 34 32 IP3 (dBm) Idd (mA) 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) Idd IP3 95 80 65 50 35 20 5 5.5 95 80 65 Idd (mA) 50 35 20 5 5.5 [1] Vdd = 5V, rbias = 2k Ω [2] Vdd = 3V, rbias = 20kΩ [3] rbias = 2kΩ for Vdd = 5V, rbias = 20kΩ for Vdd = 3V [4] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Power Compression @ 4800 MHz [2] 25 20 15 10 5 0 -5 -10 -20 Pout Gain PAE Power Compression @ 4800 MHz [1] 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 -5 -10 -20 Pout Gain PAE 7 Amplifiers - low Noise - smT 1.6 1.5 NOISE FIGURE (dB) 1.4 1.3 1.2 1.1 1 Pout (dBm), GAIN (dB), PAE (%) -15 -10 -5 INPUT POWER (dBm) 0 5 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 4 Power Compression @ 5900 MHz [1] 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 -5 -10 -20 Pout Gain PAE Power Compression @ 5900 MHz [2] 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 -5 -10 -20 Pout Gain PAE -16 -12 -8 -4 0 INPUT POWER (dBm) 4 8 -15 -10 -5 INPUT POWER (dBm) 0 5 Gain, Power & Noise Figure vs. Supply Voltage @ 4800 MHz [3] 22 20 Gain (dB) & P1dB (dBm) 18 16 14 12 10 8 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) NF P1dB Gain Gain, Power & Noise Figure vs. Supply Voltage @ 5900 MHz [3] 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 5.5 Gain (dB) & P1dB (dBm) NOISE FIGURE (dB) 22 20 18 16 14 12 10 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) NF P1dB Gain 5.5 [1] Vdd = 5V, rbias = 2k Ω [2] Vdd = 3V, rbias = 20kΩ [3] rbias = 2kΩ for Vdd = 5V, rbias = 20kΩ for Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Gain, Noise Figure & Rbias @ 4800 MHz 20 2.2 Vdd=3V Vdd=5V 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 4800 MHz 32 30 28 IP3 (dBm) 26 24 22 20 100 Vdd=3V Vdd=5V 17 14 GAIN (dB) 11 8 5 2 100 1000 Rbias (Ohms) 10000 2 NOISE FIGURE (dB) 1.8 1.6 1.4 1.2 1 100000 1000 10000 Rbias (Ohms) 100000 Output IP3 vs. Rbias @ 5900 MHz 35 Vdd=3V Vdd=5V Gain, Noise Figure & Rbias @ 5900 MHz 18 16 14 GAIN (dB) 12 10 Vdd=3V Vdd=5V 1.7 1.6 NOISE FIGURE (dB) 1.5 1.4 1.3 1.2 1.1 1000 Rbias (Ohms) 10000 100000 32 IP3 (dBm) 29 26 23 8 6 100 20 100 1000 10000 Rbias (Ohms) 100000 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values Vdd (V) rbias (ohms) min max recommended 2k 3V 2k [1] open Circuit 4.7k 20k 261 5V 150 [2] open Circuit 1k 2k idd (mA) 20 26 31 50 65 73 7 Amplifiers - low Noise - smT 7-6 [1] with Vdd= 3V and rbias < 2k Ω may result in the part becoming conditionally stable which is not recommended. [2] with Vdd = 5V and rbias