718LP4E

HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Features Noise figure: 0.9 dB Gain: 32 dB output ip3: +40 dBm single supply: +3V to +5V 50 ohm matched input/output 24 lead 4x4 mm smT package: 16 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC718lp4(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • Access points • Test equipment Functional Diagram General Description The HmC718lp4(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 600 and 1400 mHz. The amplifier has been optimized to provide 0.9 dB noise figure, 32 dB gain and +40 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC718lp4(e) shares the same package and pinout with the HmC719lp3(e) 1.3 - 2.9 GHz lNA. The HmC718lp4(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms* parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 13 26 Vdd = +3V min. Typ. 0.6 - 1.0 30.5 0.01 0.95 15 13 15.5 19 35 187 200 13 25 max. min. Typ. 1.0 - 1.4 27.5 0.01 0.75 20 10 15.7 19 34.5 187 200 19 27 max. min. Typ. 0.6 - 1.0 32 0.01 0.95 15.5 15.5 21.5 23.5 40.5 254 281 19 25 Vdd = +5V max. min. Typ. 1.0 - 1.4 29 0.01 0.8 23 13 21.5 23.3 40 254 281 max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA * rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Gain vs. Temperature [1] 40 Broadband Gain & Return Loss [1] [2] 40 S21 7 +25C +85C -40C 30 20 RESPONSE (dB) GAIN (dB) 10 0 -10 -20 -30 -40 0.2 S22 S11 Vdd=5V Vdd=3V 35 30 25 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 2 20 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 Gain vs. Temperature [2] 40 Input Return Loss vs. Temperature [1] 0 RETURN LOSS (dB) 35 GAIN (dB) +25C +85C -40C -10 -20 30 -30 +25C +85C -40C 25 -40 20 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 -50 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 Output Return Loss vs. Temperature [1] 0 +25C +85C -40C Reverse Isolation vs. Temperature [1] 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 0.5 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 Amplifiers - low Noise - smT HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz P1dB vs. Temperature [1] [2] 26 24 Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] [2] 1.6 1.4 NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 +25C Vdd=5V Vdd=3V +85C 22 P1dB (dBm) 20 18 16 14 Vdd=3V +25C +85C -40C -40C 12 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) Psat vs. Temperature [1] [2] 26 24 22 P1dB (dBm) 20 18 Vdd=3V 16 14 12 0.5 +25C +85C -40C Output IP3 vs. Temperature [1] [2] 50 +25C +85C -40C Vdd=5V 45 Vdd=5V IP3 (dBm) 40 35 30 Vdd=3V 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 25 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] 45 40 35 IP3 (dBm) 30 25 20 15 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) IP3 Output IP3 and Idd vs. Supply Voltage @ 1300 MHz [3] 300 250 200 IP3 (dBm) Idd (mA) 150 100 50 0 5.5 45 40 35 30 25 20 15 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) IP3 300 250 200 Idd (mA) 150 100 50 0 5.5 Idd1 Idd2 Idd1 Idd2 [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Power Compression @ 700 MHz [2] 35 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 10 5 0 -5 -30 -27 -24 -21 -18 -15 INPUT POWER (dBm) -12 -9 Pout Gain PAE Power Compression @ 700 MHz [1] 35 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 10 5 0 -5 -30 -25 -20 -15 INPUT POWER (dBm) -10 -5 Pout Gain PAE 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) Power Compression @ 1300 MHz [1] 30 Pout (dBm), Gain (dB), PAE (%) 25 20 15 10 5 0 -5 -30 Power Compression @ 1300 MHz [2] 30 Pout (dBm), Gain (dB), PAE (%) 25 20 15 10 5 0 -5 -30 Pout Gain PAE Pout Gain PAE -25 -20 -15 -10 INPUT POWER (dBm) -5 0 -25 -20 -15 INPUT POWER (dBm) -10 -5 Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] 40 35 GAIN (dB) & P1dB (dBm) 30 25 20 15 10 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) P1dB Gain NF Gain, Power & Noise Figure vs. Supply Voltage @ 1300 MHz [3] 1.2 1.1 1 0.9 0.8 0.7 0.6 5.5 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 40 35 30 25 20 15 10 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) P1dB Gain NF 1.2 1.1 1 0.9 0.8 0.7 0.6 5.5 [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Gain, Noise Figure & Rbias @ 900 MHz 33 1.5 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 900 MHz 44 42 40 IP3 (dBm) 38 36 34 32 1 10 100 Rbias (Ohms) 1000 10000 31 1.3 NOISE FIGURE (dB) GAIN (dB) 29 1.1 27 Vdd=3V Vdd=5V Vdd=3V Vdd=5V 0.9 25 0.7 23 100 1000 Rbias (Ohms) 10000 0.5 100000 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) rbias Ω min max recommended 2.7k 3V 1K [1] open Circuit 3.9k 10k 820 5V 0 open Circuit 3.92k 10k idd1 (mA) 27 32 41 67 88 92 idd2 (mA) 155 155 155 166 166 166 7 Amplifiers - low Noise - smT 7-6 [1] operation with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 20 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature 5.5 V -5 dBm 175 °C 1.8 w 50 °C/w -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 3.92k) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 idd1 (mA) 22 32 43 77 88 95 idd2 (mA) 153 155 157 164 166 169 Note: Amplifier will operate over full voltage ranges shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC718lp4 HmC718lp4e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] H718 XXXX H718 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Pin Descriptions pin Number 1, 3 - 5, 7 - 16, 18, 20, 22, 23 function N/C Description No connection necessary. These pins may be connected to rf/DC ground without affecting performance. interface schematic 7 This pin is DC coupled and matched to 50 ohms. 2 rfiN 6 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 17 rfoUT rf output and DC BiAs for the second amplifier. see Application Circuit for off-chip components. 19 rfiN2 This pin is DC coupled. An off-chip DC blocking capacitor is required. 21 rfoUT1 This pin is matched to 50 ohms. 24 Vdd power supply Voltage for the first amplifier. Choke inductor and bypass capacitors are required. see application circuit. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 Amplifiers - low Noise - smT HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 7 Amplifiers - low Noise - smT 7-9 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 121128 item J1 - J3 J4 - J5 C1, C8, C12 C3 C4, C11 C5, C13 C10 l1 l2 l4 r1 r2, r3 U1 pCB [2] Description pCB mount smA Connector 2mm Vertical molex Connector 220 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0402 pkg. 10 nf Capacitor, 0603 pkg. 1000 pf Capacitor, 0603 pkg. 4.7 uf Capacitor, 0805 pkg. 15 nH inductor, 0402 pkg. 18 nH inductor, 0603 pkg. 47 nH inductor, 0603 pkg. rbias resistor, 0402 pkg. 0 ohm resistor, 0402 pkg. HmC718lp4(e) Amplifier 121126 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: Arlon 25fr F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10