758LP3E

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Features Noise figure: 1.7 dB Gain: 22 dB output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3 mm smT package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC758lp3(e) is ideal for: • Cellular infrastructure, wimAX & lTe/4G • software Defined radios • repeaters and femtocells • Access points • Test & measurement equipment Functional Diagram General Description The HmC758lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular infrastructure, wimAX & lTe/4G basestation front-end receivers operating between 700 and 2200 mHz. The amplifier has been optimized to provide 1.7 dB noise figure, 21 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The HmC758lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of the lNA for each application. Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω* parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 80 16 19 Vdd = +3V min. Typ. 700 - 1700 21.8 0.005 1.6 15 11 18 20 31 102 130 80 18 2.5 16 max. min. Typ. max. min. Typ. 700 - 1700 20 22.7 0.004 1.8 1.7 14 10 20.5 22.5 23.5 36 130 190 227 260 190 22 2.6 18 Vdd = +5V max. min. Typ. max. Units mHz dB dB/ °C 2.0 dB dB dB dBm dBm dBm 260 mA 1700 - 2200 19.4 0.01 1.4 13 15 20 21.5 31.5 102 1700 - 2200 21.3 0.01 1.6 14 12 24 25 35 227 * r1 & r2 resistors set current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Gain vs. Temperature, Vdd = +5V 25 Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 S21 Vdd=5V Vdd=3V 7 Amplifiers - low Noise - smT 7-2 23 0 -5 -10 -15 -20 -25 0 GAIN (dB) 5 21 +25C +85C -40C 19 17 S22 S11 1 2 3 4 FREQUENCY (GHz) 5 6 15 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 Gain vs. Temperature, Vdd = +3V 25 Input Return Loss vs. Temperature, Vdd = +5V 0 23 RETURN LOSS (dB) -5 +25C +85C -40C GAIN (dB) 21 +25C +85C -40C -10 19 17 -15 15 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 -20 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 Output Return Loss vs. Temperature, Vdd = +5V 0 Reverse Isolation vs. Temperature, Vdd = +5V 0 -10 RETURN LOSS (dB) -5 ISOLATION (dB) +25C +85C -40C -20 -30 -40 -50 +25C +85C -40C -10 -15 -20 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 -60 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Output IP3 vs. Temperature 45 Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] 3 +85C 2.5 NOISE FIGURE (dB) 2 1.5 +25C Vdd=5V Vdd=3V 40 IP3 (dBm) -40C 35 30 +25C +85C -40C 1 0.5 0 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 25 Vdd=3V 20 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz 45 300 250 Output IP3 and Supply Current vs. Supply Voltage @ 1900 MHz 45 300 250 40 IP3 40 IP3 IP3 (dBm) IP3 (dBm) 35 200 Idd (mA) 35 200 Idd (mA) 30 150 30 150 25 Idd 100 25 Idd 100 20 2.7 3.1 3.5 3.9 4.3 4.7 5.1 Voltage Supply (V) 50 5.5 20 2.7 50 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 5.5 Output IP3 vs. Output Power @ 900 MHz 40 Output IP3 vs. Output Power @ 1900 MHz 36 35 34 38 IP3 (dBm) Vdd=3V Vdd=5V IP3 (dBm) 36 33 32 Vdd=3V Vdd=5V 34 32 31 30 -10 30 -10 -5 0 OUTPUT POWER (dBm) 5 10 -5 0 OUTPUT POWER (dBm) 5 10 [1] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Power Compression @ 900 MHz [2] 25 20 15 10 5 0 -5 -25 Pout Gain PAE Power Compression @ 900 MHz [1] 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -20 Pout Gain PAE 7 Amplifiers - low Noise - smT 7-4 -15 -10 -5 0 5 Pout (dBm), Gain (dB), PAE (%) -20 -15 -10 -5 0 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 1900 MHz [1] 40 Pout (dBm), Gain (dB), PAE (%) Pout Gain PAE Power Compression @ 1900 MHz [2] 40 Pout (dBm), Gain (dB), PAE (%) Pout Gain PAE 30 30 20 20 10 10 0 0 -10 -20 -15 -10 -5 0 INPUT POWER (dBm) 5 10 -10 -20 -15 -10 -5 0 INPUT POWER (dBm) 5 10 Recommended Bias Resistor Values for Idd Vdd (V) 3V 3V 3V 5V 5V 5V r1 (ohms) 390 1k 3.3k 390 1k 3.3k r2 (ohms) 560 1.5k 4.7k 560 1.5k 4.7k idd (mA) 102 85 54 227 190 124 Typical Supply Current vs. Vdd (R1 = 390Ω, R2 = 560Ω) Vdd (V) 2.7 3 3.3 4.5 5 5.5 idd (mA) 80 102 122 200 227 255 Absolute Min/Max Bias Resistor Range max r1 (ohms) 3.9k r2 (ohms) 5.6k r1 (ohms) 270 min r2 (ohms) 470 Note: Amplifier will operate over full voltage range shown above. [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Amplifiers - low Noise - smT Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5V) Channel Temperature Continuous pdiss (T= 85 °C) (derate 20 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +6 V +5 dBm 150 °C 1.3 w 50 °C/w -65 to +150 °C -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC758lp3 HmC758lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 758 XXXX 758 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Pin Descriptions pin Number 1, 3 - 6, 7 - 10, 12, 14 function N/C Description No connection required. These pins may be connected to rf/DC ground without affecting performance. interface schematic 7 This pin is DC coupled. An off-chip DC blocking capacitor is required. 2 rfiN 11 rfoUT This pin is DC coupled. An off-chip DC blocking capacitor is required. 13 BiAs2 This pin is used to set the DC current of the second stage amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage for the amplifier. Bypass capacitors are required. see application circuit. 16 BiAs1 This pin is used to set the DC current of the first stage amplifier by selection of external bias resistor. see application circuit. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 Amplifiers - low Noise - smT HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Amplifiers - low Noise - smT 7-7 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 121703 item J1, J2 J3, J4 C1 C2 C3 - C5 C6 r1 r2 U1 pCB [2] Description pCB mount smA rf Connector DC pin 220 pf Capacitor, 0402 pkg. 10 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0603 pkg. 2.2 µf Tantalum Capacitor 390 ohm resistor, 0402 pkg. 560 ohm resistor, 0402 pkg. HmC758lp3(e) Amplifier 121701 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8