HMC-ABH264_10

HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Features high output ip3: 29 dBm high p1dB: 18 dBm high Gain: 18.5 dB Bias supply: +5V 50 ohm matched input/output Die size: 2.4 x 1.64 x 0.1 mm Typical Applications The hmC-ABh264 is ideal for: • point-to-point radios 3 Amplifiers - lineAr & power - Chip • point-to-multi-point radios • VsAT • military & space Functional Diagram General Description The hmC-ABh264 is a high dynamic range GaAs phemT mmiC medium power Amplifier which operates between 34 and 42 Ghz. The hmC-ABh264 provides 18.5 dB of gain, and an output power of 18 dBm at 1 dB compression from a +5V supply. The hmC-ABh264 amplifier can easily be integrated into multi-Chipmodules (mCms) due to its small size. This compact medium power amplifier die delivers consistent output power and excellent gain flatness across its rated bandwidth. All data is herein is measured with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vd1 = Vd2 = Vdd = 5V, IddTOTAL = 120mA* parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure Total supply Current (idd)(Vdd = 5V, Vgg = -0.45V Typ.) 16.5 16 min. Typ. 34 - 40 18.5 0.018 16 16 18 20.5 29 6.5 120 140 16 16 max. min. Typ. 40 - 42 18.5 0.022 12 15 17 20.5 27.5 6.5 120 140 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg between -2 to 0V to achieve Idd = 120mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Gain vs. Temperature 25 Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 10 0 -10 -20 -30 32 34 36 38 40 42 44 FREQUENCY (GHz) S21 S11 S22 20 GAIN (dB) 15 +25C +85C -55C 3 32 34 36 38 40 42 44 10 5 0 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 -20 -20 -25 32 34 36 38 40 42 44 FREQUENCY (GHz) -25 32 34 36 38 40 42 44 FREQUENCY (GHz) Output P1dB vs. Temperature 25 Psat vs. Temperature 25 23 P1dB (dBm) Psat (dBm) +25C +85C -55C 23 21 21 19 19 +25C +85C -55C 17 17 15 34 36 38 40 42 44 FREQUENCY (GHz) 15 34 36 38 40 42 44 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Noise Figure vs. Temperature 10 Output IP3 vs. Temperature 35 33 +25C +85C -55C 31 IP3 (dBm) 29 27 25 23 34 36 38 40 42 44 FREQUENCY (GHz) NOISE FIGURE (dB) 3 Amplifiers - lineAr & power - Chip 8 6 4 +25C +85C -55C 2 0 34 36 38 40 42 44 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 38 GHz, Idd= 120mA 25 GAIN (dB), P1dB (dBm), Psat (dBm) Reverse Isolation vs. Temperature 0 20 ISOLATION (dB) -10 +25C +85C -55C 15 Gain(dB) P1dB(dBm) Psat(dBm) -20 10 -30 5 -40 0 4.5 -50 5 Vdd (V) 5.5 32 34 36 38 40 42 44 FREQUENCY (GHz) Power Compression @ 36 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -18 Pout (dBm) Gain (dB) PAE (%) Power Compression @ 40 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -18 Pout (dBm) Gain (dB) PAE (%) -14 -10 -6 -2 2 6 10 14 -14 -10 -6 -2 2 6 10 14 INPUT POWER (dBm) INPUT POWER (dBm) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Typical Supply Current vs. Vdd Vdd (V) 4.0 4.5 5.0 idd (mA) 114 117 120 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) rf input power (rfin)(Vdd = +5Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 10.8 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature 5.5 V -1 to 0.3 Vdc +10 dBm 180 °C 1w 93 °C/w -65 to +150 °C -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 120mA at +5V. 3 Amplifiers - lineAr & power - Chip 3-4 eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions Outline Drawing Die Packaging Information standard Gp-2 (Gel pack) [1] noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Pad Descriptions pad number function rfin rfoUT Description This pad is AC coupled and matched to 50 ohms This pad is AC coupled and matched to 50 ohms. interface schematic 1 2 3 Amplifiers - lineAr & power - Chip 3, 5 Vd2, 1 power supply Voltage for the amplifier. external bypass capacitors of 100 pf and 0.01 µf are required. 4, 6 Vg2, 1 Gate control for amplifier. Adjust to achieve idd of 120mA. please follow “mmiC Amplifier Biasing procedure” Application note. external bypass capacitors of 100 pf and 0.01 µf are required. Die Bottom GnD Die bottom must be connected to rf/DC ground. Assembly Diagram 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3-6 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible